Analysis and Simulation of Heterostructure Devices

• Author: Palankovski, Vassil; Quay, Rüdiger
• Published: 2004, 300 pages
• ISBN: 978-3-211-40537-6 (Hardcover), 978-3-7091-0560-3 (eBook)
• Information from Amazon

Abstract:
Semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs), are among the fastest and most advanced high-frequency devices. The topic of this book is the physical modeling of modern submicron heterostructure devices. In particular, a detailed discussion of models and parameters for compound semiconductors is presented. Based on the comprehensive modeling more than 25 simulation examples for several different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based HEMTs and HBTs are shown in comparison with experimental data from state-of-the-art devices. Device-specific optimization potentials are discussed systematically. This book is of interest for device and circuit designers in semiconductor development and industry. It is strongly recommended for advanced undergraduate and graduate students, for researchers in the field of electrical engineering and solid-state physics, for TCAD users and developers, and for researchers who are looking for practical application of their scientific work.