D I S S E R T A T I O N

Modeling Spintronic Effects
in Silicon

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften

eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik und Informationstechnik
von

Dmitry Osintsev

Gerlgasse 1A/5
A-1030 Wien, Österreich

geboren am 13. September 1986 in Wolgograd, UdSSR

Wien, im 28 Mai 2014     

Kurzfassung
Abstract
Аннотация
Acknowledgement
Contents
List of Symbols
List of Constants
1 Introduction
2 Motivation
3 Outline of the Thesis
4 Band Structure Calculations
 4.1 The Cellular Method
 4.2 Variational Methods
 4.3 The k⋅p Method
 4.4 Perturbation Theory
 4.5 Effective Mass
 4.6 Spin-Orbit Interaction
5 Effective k⋅p Hamiltonian
 5.1 Relaxed Silicon Structure
 5.2 Two-Band k⋅p Hamiltonian of [001] Valley at the X-Point Including Spin
 5.3 Analytical Wave Function Calculation
 5.4 Validation of the Analytical Solution
 5.5 Numerical Wave Functions Calculation
 5.6 Overlap Calculation
 5.7 Valley Splitting
6 Momentum Relaxation and Mobility Calculations
 6.1 Surface Roughness Limited Scattering Matrix Elements
 6.2 Surface Roughness Limited Momentum Relaxation Rates
 6.3 Phonon Induced Momentum Scattering Rates
 6.4 Momentum Relaxation Time Calculation
 6.5 Mobility Calculation
7 Spin Relaxation
 7.1 Strain Dependence of Surface Roughness Limited Spin Relaxation Matrix Elements
 7.2 Spin Relaxation Rate
 7.3 Spin Lifetime Calculations
 7.4 Valley Splitting in Unstrained Films
 7.5 Primed Subbands and f-Processes
 7.6 Results
8 Spin Field-Effect Transistor
 8.1 Spin Transport
 8.2 Effective Spin-Orbit Hamiltonian
 8.3 Datta-Das SpinFET Model
 8.4 Code Parallelization
 8.5 Simulation Results
9 Summary and Outlook
Bibliography
List of Publications
Curriculum Vitae