The Institute for Microelectronics and Infineon Technologies Austria AG have a long-lasting collaboration in the field of micro- and nano-electronics. Our collaboration covers all aspects of analyzing and investigating microelectronic devices, both experimentally and theoretically. This includes studying the relevant materials down to the atomistic level (e.g. DFT, MD), simulating and modeling the fabrication of complex geometries (e.g. process TCAD), and studying the operation and reliability of advanced nano-sized devices (e.g. Monte Carlo simulations and/or device TCAD).
The Institute for Microelectronics is seeking a highly qualified and experienced individual to join our team as a Senior Expert in the physical modeling and simulation of GaN MOSFETs. This is an exciting opportunity to contribute to cutting-edge research and development in the field of GaN power electronics. The position offers unique possibilities for a talented professional with a strong background in research, research fund acquisition, and teaching experience at the master's level and provides an option for candidates interested in long-term career growth. The specific requirements and evaluation criteria for the position will be discussed during the interview process.
- Develop and enhance physical models for GaN MOSFETs using TCAD tools.
- Conduct simulations and optimize GaN-based power devices based on physical modeling approaches.
- Collaborate with cross-functional teams to identify research objectives and develop innovative solutions.
- Acquire research funds through grant applications, industry partnerships, and other funding opportunities.
- Publish research findings in reputable journals and present at relevant conferences and technical forums.
- Mentor junior researchers and provide technical guidance to support their professional development.
- Stay up-to-date with latest advancements and emerging trends in GaN power electronics and physical modeling.
- Ph.D. in Electrical Engineering, Physics, or a related field with a focus on semiconductor devices.
- Extensive experience in physical modeling of GaN MOSFETs and power devices.
- Proficiency in using TCAD tools such as Sentaurus, Silvaco, or similar software packages.
- Strong background in device physics and a solid understanding of GaN material properties.
- Proven track record of acquiring research funds through successful grant applications or industry collaborations.
- Demonstrated expertise in the characterization and measurement of GaN-based devices.
- Excellent publication record in peer-reviewed journals and experience presenting research findings.
- Strong analytical and problem-solving skills with the ability to develop and validate physical models.
- Effective communication and collaboration skills to work within a multidisciplinary team environment.
- Teaching experience at the master's level, lecturing, and student supervision.
- Prior experience in mentoring junior researchers or supervising graduate students is a plus.
The anticipated starting date is the 1. October 2023.
This position is subject to the collective agreement of TU Wien for workers and employees, employment group B2 (40 hours/week). The monthly salary is paid 14 times and the gross annual salary is approximately EUR 76 990 (Austrian health care and pension plan are included in the contract).
How to Apply
Interested candidates should submit the following documents no later than 31. July 2023:
- Detailed curriculum vitae (CV) highlighting relevant qualifications and experience.
- Two-page motivation letter expressing interest in the position and outlining your research vision as well as discussing relevant previous experience related to the desired skills and experience.
- Your PhD thesis (weblink or pdf)
- List of publications and conference presentations.
- Contact information for three professional references.
Note that we are an equal opportunity employer and encourage applications from individuals of all backgrounds. Please submit your application to Prof. Dr. Michael Waltl (waltl@). The position will remain open until filled. iue.tuwien.ac. at