Simulation of Advanced MRAM Devices for sub-ns Switching Proceedings Article
In: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 01-04, 2024.
Field-Free Magnetization Switching in SOT-MRAM Devices with Noncollinear Antiferromagnets Proceedings Article
In: 2024 Austrochip Workshop on Microelectronics (Austrochip), pp. 1-4, 2024.
Optimization of Spin-Orbit Torque for Field-Free Switching of Ferromagnetic Trilayers Proceedings Article
In: Book of abstracts of the International conference on magnetism (ICM), pp. 1286, 2024, (Poster: International conference on magnetism (ICM), Bologna, Italy; 2024-06-30 – 2024-07-05).
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices with Non-Collinear Antiferromagnets Proceedings Article
In: Book of abstracts of the International conference on magnetism (ICM), pp. 1842, 2024, (Poster: International conference on magnetism (ICM), Bologna, Italy; 2024-06-30 – 2024-07-05).
Out-of-plane Polarized Spin Current Generation for Field-free Switching of Perpendicular SOT-MRAM Honorable Mention Proceedings Article
In: Book of abstracts of the Device Research Conference (DRC), pp. 143-144, 2024, (Best Student Poster Award).
Optimizing Unconventional Trilayer SOTs for Field-Free Switching Proceedings Article
In: Book of Abstracts of the International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), pp. 84-85, 2024, (Poster: International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Athens, Greece; 2024-05-15 – 2024-05-17).
Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices Proceedings Article
In: Book of Abstracts of the International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), pp. 153-154, 2024.
Micromagnetic modeling of SOT-MRAM dynamics Journal Article
In: Physica B: Condensed Matter, vol. 676, pp. 415612, 2024, ISSN: 0921-4526.
Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling Journal Article
In: Micromachines, vol. 15, no. 5, 2024, ISSN: 2072-666X.
Micromagnetic modeling of double spin-torque magnetic tunnel junction devices Journal Article
In: Physica B: Condensed Matter, vol. 688, pp. 416124, 2024, ISSN: 0921-4526.
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling Proceedings Article
In: 2024 Device Research Conference (DRC), pp. 1-2, 2024.
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures Proceedings Article
In: 2024 47th MIPRO ICT and Electronics Convention (MIPRO), pp. 1579-1583, 2024.
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect Best Paper Proceedings Article
In: 2024 47th MIPRO ICT and Electronics Convention (MIPRO), pp. 1584-1589, 2024.
Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets Proceedings Article
In: 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-5, 2024.
Multi-bit Operation in an MRAM Cell with a Composite Free Layer Proceedings Article
In: Proceedings of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), 2023, (talk: The Workshop on Innovative Nanoscale Devices and Systems (WINDS) 2023, Kona, USA, 2023-12-03 – 2023-12-08).
Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices Journal Article
In: Solid-State Electronics, vol. 199, pp. 108491-1 – 108491-4, 2023.
Numerical Simulations of Spintronic Magnetoresistive Memories Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2023, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2023-10-26).
Charge and Spin Transport in Semiconductor Devices Proceedings Article
In: Proceedings of the 2023 IEEE 15th International Conference on ASIC (ASICON), pp. 1-4, 2023, ISBN: 979-8-3503-1298-0, (invited; talk: 2023 IEEE 15th International Conference on ASIC (ASICON), Nanjing, China; 2023-10-24 – 2023-10-27).
Spin and Charge Transport in Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of the 15th International Conference Micro- and Nanoelectronics (ICMNE), 2023, ISBN: 978-5-317-07055-7, (invited; talk: 15th International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2023-10-02 – 2023-10-06).
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping Journal Article
In: Solid-State Electronics, vol. 208, pp. 108738-1 – 108738-4, 2023.
Numerical study of two-terminal SOT-MRAM Journal Article
In: Physica B: Condensed Matter, vol. 673, 2023.
Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices Proceedings Article
In: SISPAD 2023: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 357–360, 2023, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), Kobe, Japan; 2023-09-27 – 2023-09-29).
Study of Self-Heating and its Effects in SOT-STT-MRAM Proceedings Article
In: SISPAD 2023: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 337–340, 2023, ISBN: 978-4-86348-803-8, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), Kobe, Japan; 2023-09-27 – 2023-09-29).
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory Proceedings Article
In: Proceedings of the 5th International Conference on Microelectronic Devices and Technologies, pp. 28-30, 2023, ISBN: 978-84-09-53748-8, (talk: International Conference on Microelectronic Devices and Technologies (MicDAT 2023), Funchale (Madeira Island), Portugal; 2023-9-20 – 2023-09-22).
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices Proceedings Article
In: Proceedings of the 53rd European Solid-State Device Research Conference (ESSDERC), pp. 93–96, 2023, (talk: IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, Portugal; 2023-09-11 – 2023-09-14).
Modeling Emerging Spintronic Devices and Spintronic THz Emitters Proceedings Article
In: 10th International Symposium on Terahertz-Related Devices and Technologies TeraTech 2023 Technical Digest, pp. 50–51, 2023, (talk: 10th International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023), Aizu-Wakamatsu, Japan; 2023-09-04 – 2023-09-08).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells Journal Article
In: Solid-State Electronics, vol. 201, pp. 108590-1 – 108590-7, 2023.
A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices Journal Article
In: Micromachines, vol. 14, no. 8, pp. 1581, 2023.
Multi-Level Operation in Ultra-Scaled MRAM Proceedings Article
In: Proceedings 2023 IEEE Latin American Electron Devices Conference (LAEDC), pp. 1–4, 2023, (talk: 2023 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2023-07-03 – 2023-07-05).
Switching Performance of Mo-based pMTJ and dsMTJ Structures Proceedings Article
In: Book of abstracts of the International Workshop on Computationals Nanotechnology (IWCN), pp. 144-145, 2023, ISBN: 978-84-09-51107-5, (talk: International Workshop on Computationals Nanotechnology (IWCN), Barcelona, Spain; 2023-06-12 -- 2023-06-16).
Towards Efficient SOT-assisted STT-MRAM Cell Switching using Reinforcement Learning Proceedings Article
In: Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC), pp. 1, 2023, (talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2023-06-04 -- 2023-06-09).
Micromagnetic Modeling of SOT-MRAM Dynamics Proceedings Article
In: Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM), pp. 1, 2023, (talk: International Symposium on Ħysteresis Modeling and Micromagnetics (ĦMM), Vienna, Austria; 2023-06-04 -- 2023-06-07).
Impact of Spin-Flip Length in dsMTJ Pacer Layers on Switching Performance Proceedings Article
In: Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM), pp. 1, 2023, (poster: International Symposium on Ħysteresis Modeling and Micromagnetics (ĦMM), Vienna, Austria; 2023-06-04 -- 2023-06-07).
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices Proceedings Article
In: ECS Transactions, pp. 181-186, 2023.
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices Journal Article
In: ECS Transactions, vol. 111, no. 1, pp. 181-186, 2023.
Back-Hopping in Ultra-Scaled MRAM Cells Proceedings Article
In: MIPRO 2022 Proceedings, pp. 1, 2023, (talk: MIPRO 2023 - 46th International Convention - Microelectronics, Electronics and Electronic Technology, Opatja, Croatia; 2023-05-22 -- 2023-05-26).
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping Proceedings Article
In: 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023, pp. 2, 2023, (talk: 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023, Tarragona, Spain; 2023-05-10 -- 2023-05-12).
Finite Element Approach for the Simulation of Modern MRAM Devices Journal Article
In: Micromachines, vol. 14, no. 5, pp. 898, 2023, (invited).
Switching Composite Free Layers in Ultra-Scaled MRAM Cells Presentation
12.02.2023, (talk: 22nd International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2023-02-12 -- 2023-02-17).
Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase Proceedings Article
In: 2023, (poster: 22nd International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2023-02-12 -- 2023-02-17).
Modeling thermal effects in STT-MRAM Journal Article
In: Solid-State Electronics, vol. 200, pp. 108522, 2023, ISSN: 0038-1101.
Modeling Advanced Spintronic Based Magnetoresistive Memory Book Chapter
In: 2023, ISBN: 978-1-83953-786-8, (Proceedings of the International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE)).
Finite Element Method for MRAM Switching Simulations Proceedings Article
In: Proceedings of the International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), 2023, (invited; talk: 2023 International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), Athens, Greece; 2023-01-21 -- 2023-01-23).
Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves Proceedings Article
In: Book of Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), 2023, (talk: 2023 Workshop on Innovative Nanoscale Devices and Systems (WINDS), Luhue, HI, USA; 2022-12-04 -- 2022-12-09).
Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase Proceedings Article
In: Book of abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), 2023, (talk: 2022 Workshop on Innovative Nanoscale Devices and Systems (WINDS); 2022-12-04 -- 2022-12-09).
Spin-Based Devices for Digital Spintronics Book Chapter
In: 2023, ISBN: 978-3-030-79826-0, (Springer Handbook of Semiconductor Devices).
Spin-Technology Computer-Aided Design: A Key Component of Microelectronics' Development Book Chapter
In: pp. 337-347, 2023, ISBN: 9781394202447, (75th Anniversary of the Transistor).
Magnetic and Spin Devices, Volume II Miscellaneous
2023, ISBN: 978-3-0365-9892-5.
Editorial for the Special Issue on Magnetic and Spin Devices, Volume II Miscellaneous
2023, ISBN: 978-3-0365-9892-5, (2131-1 -- 2131-4; Editorial for the Special Issue on Magnetic and Spin Devices, Volume 2";Micromachines, 14, (2023)).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach Proceedings Article
In: Proceedings of the IEEE International Electron Devices Meeting (IEDM), Special Poster Session Dedicated to MRAM, 2022, (talk: 2022 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2022-12-03 -- 2022-12-07).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells Journal Article
In: Scientific Reports, vol. 12, pp. 20958-1 – 20958-12, 2022.
Advanced Modeling of Emerging Devices for Digital Spintronics Proceedings Article
In: Proceedings of the International Conference on Nanoscience and Nanotechnology, 2022, (invited; talk: 2022 International Conference on Nanoscience and Nanotechnology, Dubai, UAE; 2022-11-17 -- 2022-11-18).
Design Analysis of Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2022, ISBN: 978-1-6654-6905-0, (invited; talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China; 2022-10-25 -- 2022-10-28).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach Journal Article
In: Journal of Systemics, Cybernetics and Informatics, vol. 20, no. 4, pp. 40 – 44, 2022, (invited).
Modeling Advanced Spintronic Based Magnetoresistive Memory Proceedings Article
In: Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE), 2022, (invited; talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; 2022-09-27 -- 2022-09-29).
Spin Torques in ULTRA-Scaled MRAM Devices Proceedings Article
In: Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp. 348–351, 2022, ISBN: 978-1-6654-8496-1, (talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 2022-09-20 -- 2022-09-22).
Modeling Thermal Effects in STT-MRAM Proceedings Article
In: SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 11–12, 2022, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 -- 2022-09-08).
Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices Proceedings Article
In: SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 11–12, 2022, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 -- 2022-09-08).
About Electron Transport and Spin Control in Semiconductor Devices Proceedings Article
In: SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 1–4, 2022, (invited; talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 -- 2022-09-08).
About electron transport and spin control in semiconductor devices Journal Article
In: Solid-State Electronics, vol. 197, no. 108443, 2022, (invited).
Advanced Modeling of Emerging Magnetoresistive Memory Proceedings Article
In: Proceedings of the International Meet & Expo on Nanotechnology (NANOMEET), 2022.
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach Proceedings Article
In: The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II, pp. 40–44, 20, 2022, (talk: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 2022-07-12 -- 2022-07-15).
Modeling Approach to Ultra-Scaled MRAM Cells Proceedings Article
In: Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET), pp. 7–8, 2022, (invited; talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen; 2022-06-23 -- 2022-06-25).
Simulation of Novel MRAM Devices with Enhanced Performance Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
Modeling Interfacial and Bulk Spin-Orbit torques Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy Proceedings Article
In: 2022 IEEE Latin American Electron Devices Conference (LAEDC), pp. 1–4, 978-1-6654-9768-8, 2022, ISBN: 978-1-6654-9768-8, (talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2022-06-04 -- 2022-06-06).
Reinforcement learning to reduce failures in SOT-MRAM switching Journal Article
In: Microelectronics Reliability, vol. 135, no. 114570, pp. 1–5, 2022, (invited).
Spin Transfer Torques in Ultra-Scaled MRAM Cells Best Paper Proceedings Article
In: 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), pp. 129–132, 2022, ISBN: 978-953-233-103-5, (talk: MIPRO 2022, Opatija, Croatia; 2022-05-23 -- 2022-05-27).
Spin Transfer Torques in Ultra-Scaled MRAM Cells Book Section
In: 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), pp. 129–132, IEEE Xplore Digital Library, 2022, ISBN: 978-953-233-103-5.
Emerging Devices for Digital Spintronics Proceedings Article
In: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, pp. 32–33, 2022, (invited; talk: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online; 2022-05-25 -- 2022-05-26).
Finite Element Modeling of Spin-Orbit Torques Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2022, (poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 -- 2022-05-20).
Finite Element Modeling of Spin-Orbit Torque Book Section
In: Proceedings of the 2022 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2022.
Interface Effects in Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2022, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 -- 2022-05-20).
Interface Effects in Ultra-Scaled MRAM Cells Journal Article
In: Solid-State Electronics, vol. 194, pp. 108373-1–108373-4, 2022.
Double Reference Layer STT-MRAM Structures with Improved Performance Journal Article
In: Solid-State Electronics, vol. 194, pp. 108335-1–108335-4, 2022.
Finite Element Modeling of Spin-Orbit Torques Journal Article
In: Solid-State Electronics, vol. 194, pp. 108323-1–108323-4, 2022.
Magnetic and Spin Devices Book Chapter
In: MDPI, 2022, ISBN: 978-3-0365-3842-6.
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach Journal Article
In: Solid-State Electronics, vol. 193, pp. 108269-1–108269-7, 2022, (invited).
Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase Journal Article
In: Solid-State Electronics, vol. 193, pp. 108266-1–108266-8, 2022, (invited).
Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches Journal Article
In: Proceedings of SPIE, vol. 12157, pp. 1215708-1–1215708-14, 2022, (invited).
Editorial for the Special Issue on Magnetic and Spin Devices Journal Article
In: Micromachines, vol. 13, pp. 493-1–493-3, 2022.
Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches Proceedings Article
In: 2nd Global Webinar on Nanoscience & Nanotechnology, 2022, (invited; talk: 2 nd Global Webinar on Nanoscience & Nanotechnology, online; 2022-03-14 -- 2022-03-15).
Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM Proceedings Article
In: Proceedings of the 14th International MOS-AK Workshop, pp. 1, 2021, (talk: International MOS-AK Workshop, Silicon Valley, USA; 2021-12-17).
Design Support for Ultra-Scaled MRAM Cells Proceedings Article
In: Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM, 2021, (poster presentation: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 -- 2021-12-15).
Reinforcement Learning to Reduce Failures in SOT-MRAM Switching Proceedings Article
In: Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2021, ISBN: 978-1-6654-3988-6, (talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 -- 2021-10-15).
Enhancing SOT-MRAM Switching Using Machine Learning Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2021, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2021-10-14).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Journal Article
In: Microelectronics Reliability, vol. 126, pp. 114231-1–114231-5, 2021.
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches Proceedings Article
In: Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), 2021, ISBN: 978-5-317-06675-8, (invited; talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2021-10-04 -- 2021-10-08).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Proceedings Article
In: Proceedings of the 32nd European Symposium on the Reliability of Electron Đevices, Failure Physics and Analysis, pp. 1–4, 2021, ISSN: 0026-2714, (talk: European Symposium on Reliability of Electron Đevices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 -- 2021-10-07).
Finite Element Method Approach to MRAM Modeling Proceedings Article
In: Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO), pp. 70–73, 2021, ISBN: 978-953-233-101-1, (talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 -- 2021-10-01).
Finite Element Method Approach to MRAM Modeling Book Section
In: 2021 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)), pp. 70–73, IEEE Xplore Digital Library, 2021, ISBN: 978-953-233-101-1.
Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 -- 2021-09-29).
Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 -- 2021-09-29).
Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States Proceedings Article
In: Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition, 2021, (talk: European Solid-State Đevice Research Conference (ESSĐERC), Grenoble, France; 2021-09-13 -- 2021-09-17).
Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration Proceedings Article
In: Proceedings of the Trends in Magnetism Conference (TMAG), 2021, (talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 -- 2021-09-10).
Temperature Increase in MRAM at Writing: A Finite Element Approach Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 133–134, 2021, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).
First Principles Approach to Study Topologically Protected Edge States in 1T' MoS2 Nanoribbons Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 113–114, 2021, (poster presentation: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).
Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 52–53, 2021, (poster presentation: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).
Temperature Increase in MRAM at Writing: A Finite Element Approach Book Section
In: Cretu, Bogdan (Ed.): Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1–4, IEEE, 2021, ISBN: 978-1-6654-3746-2.