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Advanced SOT-MRAM Back-hopping DS-MTJ FEM field-free switching Finite Element Method Finite elements magnetic spin Hall effect magnetic tunnel junctions MRAM MTJ heating perpendicular magnetic anisotropy reinforcement learning SOT SOT-MRAM Spin and Charge Drift-diffusion Spin drift-diffusion Spin Hall effect Spin transfer torque Spin Transfer Torques spin-orbit torque Spin-orbit torques Spin-Transfer Torque spintronics STT-MRAM temperature modeling two-pulse switching ultra-scaled MRAM Ultra-Scaled MRAM Cells writing error

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Bernhard Pruckner; Nils Petter Jorstad; Mario Bendra; Tomas Hadamek; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov

Simulation of Advanced MRAM Devices for sub-ns Switching Proceedings Article

In: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 01-04, 2024.

Links | BibTeX | Tags: Torque;Frequency modulation;Scattering;Quantum mechanics;Switches;Mathematical models;Hall effect;Orbits;Reliability;Perpendicular magnetic anisotropy;Spintronics;SOT-MRAM;STT-MRAM;sub- ns switching