Micromagnetic modeling of double spin-torque magnetic tunnel junction devices Journal Article
In: Physica B: Condensed Matter, vol. 688, pp. 416124, 2024, ISSN: 0921-4526.
Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices Journal Article
In: Solid-State Electronics, vol. 199, pp. 108491-1 – 108491-4, 2023.
Numerical Simulations of Spintronic Magnetoresistive Memories Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2023, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2023-10-26).
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping Journal Article
In: Solid-State Electronics, vol. 208, pp. 108738-1 – 108738-4, 2023.
Switching Performance of Mo-based pMTJ and dsMTJ Structures Proceedings Article
In: Book of abstracts of the International Workshop on Computationals Nanotechnology (IWCN), pp. 144-145, 2023, ISBN: 978-84-09-51107-5, (talk: International Workshop on Computationals Nanotechnology (IWCN), Barcelona, Spain; 2023-06-12 -- 2023-06-16).
Impact of Spin-Flip Length in dsMTJ Pacer Layers on Switching Performance Proceedings Article
In: Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM), pp. 1, 2023, (poster: International Symposium on Ħysteresis Modeling and Micromagnetics (ĦMM), Vienna, Austria; 2023-06-04 -- 2023-06-07).
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices Proceedings Article
In: ECS Transactions, pp. 181-186, 2023.
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices Journal Article
In: ECS Transactions, vol. 111, no. 1, pp. 181-186, 2023.
Modeling thermal effects in STT-MRAM Journal Article
In: Solid-State Electronics, vol. 200, pp. 108522, 2023, ISSN: 0038-1101.
Modeling Advanced Spintronic Based Magnetoresistive Memory Book Chapter
In: 2023, ISBN: 978-1-83953-786-8, (Proceedings of the International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE)).
Finite Element Method for MRAM Switching Simulations Proceedings Article
In: Proceedings of the International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), 2023, (invited; talk: 2023 International Conference on Mathematical Models, Computational Techniques in Science, and Engineering (MMCTSE), Athens, Greece; 2023-01-21 -- 2023-01-23).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells Journal Article
In: Scientific Reports, vol. 12, pp. 20958-1 – 20958-12, 2022.
Modeling Thermal Effects in STT-MRAM Proceedings Article
In: SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 11–12, 2022, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 -- 2022-09-08).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach Proceedings Article
In: The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II, pp. 40–44, 20, 2022, (talk: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 2022-07-12 -- 2022-07-15).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
Double Reference Layer STT-MRAM Structures with Improved Performance Journal Article
In: Solid-State Electronics, vol. 194, pp. 108335-1–108335-4, 2022.
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach Journal Article
In: Solid-State Electronics, vol. 193, pp. 108269-1–108269-7, 2022, (invited).
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches Proceedings Article
In: Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), 2021, ISBN: 978-5-317-06675-8, (invited; talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2021-10-04 -- 2021-10-08).
Finite Element Method Approach to MRAM Modeling Proceedings Article
In: Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO), pp. 70–73, 2021, ISBN: 978-953-233-101-1, (talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 -- 2021-10-01).
Finite Element Method Approach to MRAM Modeling Book Section
In: 2021 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)), pp. 70–73, IEEE Xplore Digital Library, 2021, ISBN: 978-953-233-101-1.
Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 -- 2021-09-29).
Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions Journal Article
In: Solid-State Electronics, vol. 186, pp. 108103, 2021, (invited).
Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 51–52, 2021, ISBN: 978-89-89453-30-7, (talk: International Workshop on Computational Nanotechnology (IWCN), Đaejeon, Korea (Virtual); 2021-05-24 -- 2021-06-06).
Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices Proceedings Article
In: Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN), pp. 45–46, 2021, ISBN: 978-89-89453-30-7, (invited; talk: International Workshop on Computational Nanotechnology (IWCN), Đaejeon, Korea (Virtual); 2021-05-24 -- 2021-06-06).
Emerging CMOS Compatible Magnetic Memories and Logic Journal Article
In: IEEE Journal of the Electron Devices Society, vol. 9, pp. 456–463, 2021, (invited).
Modeling Spin Transfer Torque Magnetoresistive Memory Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2020, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2020-10-20).
Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM Proceedings Article
In: Abstracts of the Meeting of the Electrochemical Society (ECS), MA2020-01/1389, 2020, (talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 2020-05-10 -- 2020-05-14).
Emerging CMOS Compatible Magnetic Memories and Logic Proceedings Article
In: Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC), 2020, ISBN: 978-1-7281-1044-8, (invited; talk: IEEE Latin America Electron Đevices Conference (LAEDC), San Jose, Costa Rica; 2020-02-25 -- 2020-02-28).
CMOS Technology Compatible Magnetic Memories Proceedings Article
In: Proceedings of the International Symposium on Next Generation Electronics (ISNE), 2019, ISBN: 978-1-7281-2062-1, (invited; talk: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China; 2019-10-09 -- 2019-10-10).