Optimization of Spin-Orbit Torque for Field-Free Switching of Ferromagnetic Trilayers Proceedings Article
In: Book of abstracts of the International conference on magnetism (ICM), pp. 1286, 2024, (Poster: International conference on magnetism (ICM), Bologna, Italy; 2024-06-30 – 2024-07-05).
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices with Non-Collinear Antiferromagnets Proceedings Article
In: Book of abstracts of the International conference on magnetism (ICM), pp. 1842, 2024, (Poster: International conference on magnetism (ICM), Bologna, Italy; 2024-06-30 – 2024-07-05).
Out-of-plane Polarized Spin Current Generation for Field-free Switching of Perpendicular SOT-MRAM Honorable Mention Proceedings Article
In: Book of abstracts of the Device Research Conference (DRC), pp. 143-144, 2024, (Best Student Poster Award).
Magnetic Spin Hall Induced Field-Free Magnetization Switching in SOT-MRAM Devices Proceedings Article
In: Book of Abstracts of the International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), pp. 153-154, 2024.
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices Proceedings Article
In: Proceedings of the 53rd European Solid-State Device Research Conference (ESSDERC), pp. 93–96, 2023, (talk: IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, Portugal; 2023-09-11 – 2023-09-14).
Finite Element Approach for the Simulation of Modern MRAM Devices Journal Article
In: Micromachines, vol. 14, no. 5, pp. 898, 2023, (invited).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach Proceedings Article
In: Proceedings of the IEEE International Electron Devices Meeting (IEDM), Special Poster Session Dedicated to MRAM, 2022, (talk: 2022 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2022-12-03 -- 2022-12-07).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach Journal Article
In: Journal of Systemics, Cybernetics and Informatics, vol. 20, no. 4, pp. 40 – 44, 2022, (invited).
Modeling Advanced Spintronic Based Magnetoresistive Memory Proceedings Article
In: Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE), 2022, (invited; talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; 2022-09-27 -- 2022-09-29).
Simulation of Novel MRAM Devices with Enhanced Performance Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches Journal Article
In: Proceedings of SPIE, vol. 12157, pp. 1215708-1–1215708-14, 2022, (invited).
Finite Element Method Approach to MRAM Modeling Book Section
In: 2021 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)), pp. 70–73, IEEE Xplore Digital Library, 2021, ISBN: 978-953-233-101-1.
Temperature Increase in MRAM at Writing: A Finite Element Approach Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 133–134, 2021, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).
Spintronic Memories Proceedings Article
In: Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN), pp. 19–21, 2019, (invited; talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China; 2019-12-16 -- 2019-12-19).