Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach Journal Article
In: Solid-State Electronics, vol. 193, pp. 108269-1–108269-7, 2022, (invited).
Temperature Increase in MRAM at Writing: A Finite Element Approach Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 133–134, 2021, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 -- 2021-09-03).