Publications

Advanced SOT-MRAM Back-hopping DS-MTJ FEM field-free switching Finite Element Method Finite elements magnetic spin Hall effect magnetic tunnel junctions MRAM MTJ heating perpendicular magnetic anisotropy reinforcement learning SOT SOT-MRAM Spin and Charge Drift-diffusion Spin drift-diffusion Spin Hall effect Spin transfer torque Spin Transfer Torques spin-orbit torque Spin-orbit torques Spin-Transfer Torque spintronics STT-MRAM temperature modeling two-pulse switching ultra-scaled MRAM Ultra-Scaled MRAM Cells writing error

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Mario Bendra; Simone Fiorentini; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov

The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells Journal Article

In: Solid-State Electronics, vol. 201, pp. 108590-1 – 108590-7, 2023.

Links | BibTeX | Tags: Interfacial-Perpendicular Magnetic Anisotropy, Spin-Transfer Torques, ultra-scaled MRAM

Mario Bendra; Simone Fiorentini; Johannes Ender; Roberto Orio; Tomáš Hadámek; Wilton Jaciel Loch; Nils Petter Jørstad; Wolfgang Goes; Siegfried Selberherr

Interface Effects in Ultra-Scaled MRAM Cells Proceedings Article

In: Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2022, (talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 -- 2022-05-20).

BibTeX | Tags: Interfacial-Perpendicular Magnetic Anisotropy, ultra-scaled MRAM