Ognjen Lukic; Roberto de Orio; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov
Magnetic Field Accelerated Switching of an In-Plane MRAM Cell Proceedings Article
In: Proceedings on the 23rd International Winterschool on New Developments in Solid State Physics, pp. 158-159, 2025.
Links | BibTeX | Tags: Finite Element Method, magnetic tunnel junctions, Micromagnetics modeling, Spin drift-diffusion
@inproceedings{nokey,
title = {Magnetic Field Accelerated Switching of an In-Plane MRAM Cell},
author = {Ognjen Lukic and Roberto de Orio and Wolfgang Goes and Siegfried Selberherr and Viktor Sverdlov},
url = {https://owncloud.tuwien.ac.at/index.php/s/0yWzIrSLCeWMye8},
year = {2025},
date = {2025-02-09},
urldate = {2025-02-09},
booktitle = {Proceedings on the 23rd International Winterschool on New Developments in Solid State Physics},
pages = {158-159},
keywords = {Finite Element Method, magnetic tunnel junctions, Micromagnetics modeling, Spin drift-diffusion},
pubstate = {published},
tppubtype = {inproceedings}
}
Bernhard Pruckner; Simone Fiorentini; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov
Micromagnetic modeling of double spin-torque magnetic tunnel junction devices Journal Article
In: Physica B: Condensed Matter, vol. 688, pp. 416124, 2024, ISSN: 0921-4526.
Abstract | Links | BibTeX | Tags: Double spin-torque MTJ, magnetic tunnel junctions, Spin and charge drift–diffusion, Spin-Transfer Torque, STT-MRAM
@article{PRUCKNER2024416124b,
title = {Micromagnetic modeling of double spin-torque magnetic tunnel junction devices},
author = {Bernhard Pruckner and Simone Fiorentini and Wolfgang Goes and Siegfried Selberherr and Viktor Sverdlov},
url = {https://www.sciencedirect.com/science/article/pii/S0921452624004654},
doi = {https://doi.org/10.1016/j.physb.2024.416124},
issn = {0921-4526},
year = {2024},
date = {2024-01-01},
urldate = {2024-01-01},
journal = {Physica B: Condensed Matter},
volume = {688},
pages = {416124},
abstract = {Emerging nonvolatile magnetoresistive random access memory exhibits high endurance and long data retention compared to flash memory. Additionally, devices with double spin torque magnetic tunnel junctions (dsMTJ) featuring two magnetic reference layers demonstrate enhanced torques, fast switching, and reduced switching currents. To accurately model these devices, we adopt a coupled spin and charge transport approach allowing to describe spin-transfer torques in metallic spin valves and magnetic tunnel junctions on equal footing. Our findings indicate the critical influence of metallic non-magnetic spacers (NMS) properties separating the free layer from the second reference layer on the switching speed improvement in dsMTJ devices.},
keywords = {Double spin-torque MTJ, magnetic tunnel junctions, Spin and charge drift–diffusion, Spin-Transfer Torque, STT-MRAM},
pubstate = {published},
tppubtype = {article}
}
Simone Fiorentini; Johannes Ender; Siegfried Selberherr; Roberto Orio; Wolfgang Goes; Viktor Sverdlov
Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices Journal Article
In: Solid-State Electronics, vol. 199, pp. 108491-1 – 108491-4, 2023.
Links | BibTeX | Tags: magnetic tunnel junctions, Spin and Charge Drift-diffusion, Spin-Transfer Torque, STT-MRAM
@article{fiorentini2022SSE,
title = {Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices},
author = {Simone Fiorentini and Johannes Ender and Siegfried Selberherr and Roberto Orio and Wolfgang Goes and Viktor Sverdlov},
doi = {10.1016/j.sse.2022.108491},
year = {2023},
date = {2023-11-05},
urldate = {2023-11-05},
journal = {Solid-State Electronics},
volume = {199},
pages = {108491-1 -- 108491-4},
keywords = {magnetic tunnel junctions, Spin and Charge Drift-diffusion, Spin-Transfer Torque, STT-MRAM},
pubstate = {published},
tppubtype = {article}
}
Simone Fiorentini; Mario Bendra; Johannes Ender; Tomáš Hadámek; Wilton Jaciel Loch; Nils Petter Jørstad; Roberto Orio; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov
Modeling Advanced Spintronic Based Magnetoresistive Memory Book Chapter
In: 2023, ISBN: 978-1-83953-786-8, (Proceedings of the International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE)).
Links | BibTeX | Tags: magnetic tunnel junctions, SOT-MRAM, Spin and Charge Drift-diffusion, STT-MRAM
@inbook{fiorentini2023,
title = {Modeling Advanced Spintronic Based Magnetoresistive Memory},
author = {Simone Fiorentini and Mario Bendra and Johannes Ender and Tomáš Hadámek and Wilton Jaciel Loch and Nils Petter Jørstad and Roberto Orio and Wolfgang Goes and Siegfried Selberherr and Viktor Sverdlov },
doi = {10.1049/icp.2022.2795},
isbn = {978-1-83953-786-8},
year = {2023},
date = {2023-01-26},
note = {Proceedings of the International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE)},
keywords = {magnetic tunnel junctions, SOT-MRAM, Spin and Charge Drift-diffusion, STT-MRAM},
pubstate = {published},
tppubtype = {inbook}
}
Simone Fiorentini; Mario Bendra; Johannes Ender; Roberto Orio; Wolfgang Goes; Siegfried Selberherr; Viktor Sverdlov
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells Journal Article
In: Scientific Reports, vol. 12, pp. 20958-1 – 20958-12, 2022.
Links | BibTeX | Tags: magnetic tunnel junctions, Spin and Charge Drift-diffusion, Spin-Transfer Torque, STT-MRAM
@article{fiorentini2022SciRep,
title = {Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells},
author = {Simone Fiorentini and Mario Bendra and Johannes Ender and Roberto Orio and Wolfgang Goes and Siegfried Selberherr and Viktor Sverdlov},
doi = {10.1038/s41598-022-25586-4},
year = {2022},
date = {2022-12-05},
journal = {Scientific Reports},
volume = {12},
pages = {20958-1 -- 20958-12},
keywords = {magnetic tunnel junctions, Spin and Charge Drift-diffusion, Spin-Transfer Torque, STT-MRAM},
pubstate = {published},
tppubtype = {article}
}