Publications

Advanced SOT-MRAM Back-hopping FEM field-free switching Finite Element Method interfacial spin-orbit coupling Interfacial-Perpendicular Magnetic Anisotropy magnetic tunnel junctions Micromagnetics modeling MRAM perpendicular magnetic anisotropy perpendicular STT-MRAM reinforcement learning SOT SOT-MRAM Spin and Charge Drift-diffusion Spin drift-diffusion Spin Hall effect Spin transfer torque Spin Transfer Torques spin-orbit torque Spin-orbit torques Spin-Transfer Torque spintronics STT-MRAM temperature modeling two-pulse switching ultra-scaled MRAM Ultra-Scaled MRAM Cells writing error

Show all

B. Pruckner; N. Jørstad; T. Hadámek; W. Goes; S. Selberherr; V. Sverdlov

Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect Best Paper Proceedings Article

In: 2024 47th MIPRO ICT and Electronics Convention (MIPRO), pp. 1584-1589, 2024.

Links | BibTeX | Tags: Performance evaluation;Solid modeling;Torque;Magnetization;Random access memory;Switches;Hall effect;SOT-MRAM;magnetic spin Hall effect;LLG;drift-diffusion