Papers in Journals

Publications in Scientific Journals

797.		Lenz, C., Aguinsky, L. F., Hössinger, A., Weinbub, J. (2023). A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set Functions. Journal of Scientific Computing, 94(3), 1–21. https://doi.org/10.1007/s10915-023-02133-5 (reposiTUm)

796.		Lenz, C., Manstetten, P., Aguinsky, L. F., Rodrigues, F., Hössinger, A., Weinbub, J. (2023). Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations. Solid-State Electronics, 200, Article 108534. https://doi.org/10.1016/j.sse.2022.108534 (reposiTUm)

795.		Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023). Comprehensive evaluation of torques in ultra-scaled MRAM devices. Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 (reposiTUm)

794.		Medina-Bailon, C., Nedialkov, M. H., Georgiev, V., Selberherr, S., Asenov, A. (2023). Comprehensive mobility study of silicon nanowire transistors using multi-subband models. Nano Express, 4(2), Article 025005. https://doi.org/10.1088/2632-959X/acdb8a (reposiTUm)

793.		Filipovic, L., Baumgartner, O., Klemenschits, X., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M. (2023). DTCO flow for air spacer generation and its impact on power and performance at N7. Solid-State Electronics, 199, Article 108527. https://doi.org/10.1016/j.sse.2022.108527 (reposiTUm)

792.		Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L. (2023). Effect of Mask Geometry Variation on Plasma Etching Profiles. Micromachines, 14(3), Article 665. https://doi.org/10.3390/mi14030665 (reposiTUm)

791.		Aguinsky, L. F., Souza Berti Rodrigues, F., Reiter, T., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J. (2023). Modeling Incomplete Conformality During Atomic Layer Deposition in High Aspect Ratio Structures. Solid-State Electronics, 201, Article 108584. https://doi.org/10.1016/j.sse.2022.108584 (reposiTUm)

790.		Ceric, H., Lacerda de Orio, R., Selberherr, S. (2023). Statistical Study of Electromigration in Gold Interconnects. Microelectronics Reliability, 147, 1–7. https://doi.org/10.1016/j.microrel.2023.115061 (reposiTUm)

789.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

788.		Faber, T., Filipovic, L., Koster, L. J. A. (2023). The Role of Thermalization in the Cooling Dynamics of Hot Carrier Solar Cells. Solar RRL, 7(13), 1–9. https://doi.org/10.1002/solr.202300140 (reposiTUm)

787.		Ferry, D. K., Weinbub, J., Nedjalkov, M., Selberherr, S. (2022). A Review of Quantum Transport in Field-Effect Transistors. Semiconductor Science and Technology, 37(4), 043001. https://doi.org/10.1088/1361-6641/ac4405 (reposiTUm)

786.		Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., Grasser, T. (2022). Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture. Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 (reposiTUm)

785.		Selberherr, S., Sverdlov, V. (2022). About electron transport and spin control in semiconductor devices. Solid-State Electronics, 197(108443), 108443. https://doi.org/10.1016/j.sse.2022.108443 (reposiTUm)

784.		Ducry, F., Waldhoer, D., Knobloch, T., Csontos, M., Jimenez Olalla, N., Leuthold, J., Grasser, T., Luisier, M. (2022). An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride. Npj 2D Materials and Applications, 6(58). https://doi.org/10.1038/s41699-022-00340-6 (reposiTUm)

783.		L. Filipovic, S. Selberherr: "Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors"; Nanomaterials (eingeladen), 12 (2022), 1651. Zusätzliche Informationen

782.		Knobloch, T., Selberherr, S., Grasser, T. (2022). Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials. Nanomaterials, 12(20), 3548. https://doi.org/10.3390/nano12203548 (reposiTUm)

781.		Weinbub, J., Kosik, R. (2022). Computational Perspective on Recent Advances in Quantum Electronics: From Electron Quantum Optics to Nanoelectronic Devices and Systems. Journal of Physics: Condensed Matter, 34(16), 163001. https://doi.org/10.1088/1361-648x/ac49c6 (reposiTUm)

780.		Lenz, C., Toifl, A., Quell, M., Rodrigues, F., Hössinger, A., Weinbub, J. (2022). Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations. Solid-State Electronics, 191(108258), 108258. https://doi.org/10.1016/j.sse.2022.108258 (reposiTUm)

779.		Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2022). Double Reference Layer STT-MRAM Structures with Improved Performance. Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 (reposiTUm)

778.		Sverdlov, V., Seiler, H., El-Sayed, A.-M. B., Illarionov, Y., Kosina, H. (2022). Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase. Solid-State Electronics, 193(108266), 108266. https://doi.org/10.1016/j.sse.2022.108266 (reposiTUm)

777.		Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 (reposiTUm)

776.		Weinbub, J., Ballicchia, M., Nedjalkov, M. (2022). Gate-Controlled Electron Quantum Interference Logic. Nanoscale, 14(37), 13520–13525. https://doi.org/10.1039/d2nr04423d (reposiTUm)

775.		Nedjalkov, M., Ballicchia, M., Kosik, R., Weinbub, J. (2022). Gauge-Invariant Semidiscrete Wigner Theory. Physical Review A, 106(052213). https://doi.org/10.1103/physreva.106.052213 (reposiTUm)

774.		Reiter, T., Klemenschits, X., Filipovic, L. (2022). Impact of Plasma Induced Damage on the Fabrication of 3D NAND Flash Memory. Solid-State Electronics, 192(108261), 108261. https://doi.org/10.1016/j.sse.2022.108261 (reposiTUm)

773.		Knobloch, T., Burkay, U., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., Grasser, T. (2022). Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning. Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 (reposiTUm)

772.		Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2022). Inorganic Molecular Crystals for 2D Electronics. Nature Electronics, 4(12), 870–871. https://doi.org/10.1038/s41928-021-00691-w (reposiTUm)

771.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022). Interface Effects in Ultra-Scaled MRAM Cells. Solid-State Electronics, 194(108373), 108373. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

770.		Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022). Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm)

769.		Aguinsky, L. F., Rodrigues, F., Wachter, G., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2022). Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon. Solid-State Electronics, 191(108262), 108262. https://doi.org/10.1016/j.sse.2022.108262 (reposiTUm)

768.		Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022). Reinforcement learning to reduce failures in SOT-MRAM switching. Microelectronics Reliability, 135(114570), 114570. https://doi.org/10.1016/j.microrel.2022.114570 (reposiTUm)

767.		Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 (reposiTUm)

766.		Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Spin and charge drift-diffusion in ultra-scaled MRAM cells. Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm)

765.		Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., de Orio, R. L., Goes, W., Selberherr, S., Sverdlov, V. (2022). Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach. Solid-State Electronics, 193(108269), 108269. https://doi.org/10.1016/j.sse.2022.108269 (reposiTUm)

764.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022). The influence of interface effects on the switching behavior in ultra-scaled MRAM cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

763.		Benam, M., Ballicchia, M., Weinbub, J., Selberherr, S., Nedjalkov, M. (2021). A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling. Journal of Computational Electronics, 20(2), 775–784. https://doi.org/10.1007/s10825-020-01643-x (reposiTUm)

762.		Cervenka, J., Kosik, R., Nedjalkov, M. (2021). A Deterministic Wigner Approach for Superposed States. Journal of Computational Electronics, 20(6), 2104–2110. https://doi.org/10.1007/s10825-021-01801-9 (reposiTUm)

761.		Auzinger, W., Hofstätter, H., Koch, O., Quell, M. (2021). Adaptive Time Propagation for Time-Dependent Schrödinger Equations. International Journal of Applied and Computational Mathematics, 7(6). https://doi.org/10.1007/s40819-020-00937-9 (reposiTUm)

760.		Ruch, B., Jech, M., Pobegen, G., Grasser, T. (2021). Applicability of Shockley-Read-Hall Theory for Interface States. IEEE Transactions on Electron Devices, 68(4), 2092–2097. https://doi.org/10.1109/ted.2021.3049760 (reposiTUm)

759.		Toifl, A., Rodrigues, F., Aguinsky, L. F., Hössinger, A., Weinbub, J. (2021). Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates. Semiconductor Science and Technology, 36(4), 045016. https://doi.org/10.1088/1361-6641/abe49b (reposiTUm)

758.		Fiorentini, S., Ender, J., Selberherr, S., de Orio, R. L., Goes, W., Sverdlov, V. (2021). Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions. Solid-State Electronics, 186(108103), 108103. https://doi.org/10.1016/j.sse.2021.108103 (reposiTUm)

757.		Illarionov, Y. Y., Knobloch, T., Grasser, T. (2021). Crystalline Insulators for Scalable 2D Nanoelectronics. Solid-State Electronics, 185(108043), 108043. https://doi.org/10.1016/j.sse.2021.108043 (reposiTUm)

756.		Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory. IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm)

755.		Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental. IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm)

754.		Ender, J., Fiorentini, S., De Orio, R. L., Goes, W., Sverdlov, V., Selberherr, S. (2021). Emerging CMOS Compatible Magnetic Memories and Logic. IEEE Journal of the Electron Devices Society, 9, 456–463. https://doi.org/10.1109/jeds.2021.3066679 (reposiTUm)

753.		Gupta, N., Shah, A. P., Khan, S., Vishvakarma, S. K., Waltl, M., Girard, P. (2021). Error-Tolerant Reconfigurable VDD 10T SRAM Architecture for IoT Applications. Electronics, 10(14), 1718. https://doi.org/10.3390/electronics10141718 (reposiTUm)

752.		Klemenschits, X., Selberherr, S., Filipovic, L. (2021). Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures. Computer Methods in Applied Mechanics and Engineering, 386(114196), 114196. https://doi.org/10.1016/j.cma.2021.114196 (reposiTUm)

751.		Shah, A. P., Gupta, N., Waltl, M. (2021). High-Performance Radiation Hardened NMOS Only Schmitt Trigger Based Latch Designs. Analog Integrated Circuits and Signal Processing, 109(3), 657–671. https://doi.org/10.1007/s10470-021-01924-w (reposiTUm)

750.		Hernandez, Y., Stampfer, B., Grasser, T., Waltl, M. (2021). Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies. Crystals, 11(9), 1150. https://doi.org/10.3390/cryst11091150 (reposiTUm)

749.		Shah, A. P., Waltl, M. (2021). Impact of Negative Bias Temperature Instability on Single Event Transients in Scaled Logic Circuits. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34(3). https://doi.org/10.1002/jnm.2854 (reposiTUm)

748.		Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

747.		Ender, J., de Orio, R. L., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. Microelectronics Reliability, 126(114231), 114231. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

746.		Ruch, B., Pobegen, G., Grasser, T. (2021). Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs. IEEE Transactions on Electron Devices, 68(4), 1804–1809. https://doi.org/10.1109/ted.2021.3060697 (reposiTUm)

745.		Filipovic, L., Selberherr, S. (2021). Microstructure and Granularity Effects in Electromigration. IEEE Journal of the Electron Devices Society, 9, 476–483. https://doi.org/10.1109/jeds.2020.3044112 (reposiTUm)

744.		Aguinsky, L. F., Wachter, G., Manstetten, P., Rodrigues, F., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2021). Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators. Journal of Micromechanics and Microengineering, 31(12), 125003. https://doi.org/10.1088/1361-6439/ac2bad (reposiTUm)

743.		de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell. IEEE Journal of the Electron Devices Society, 9, 61–67. https://doi.org/10.1109/jeds.2020.3039544 (reposiTUm)

742.		Kosik, R., Cervenka, J., Kosina, H. (2021). Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner Equation. Journal of Computational Electronics, 20(6), 2052–2061. https://doi.org/10.1007/s10825-021-01800-w (reposiTUm)

741.		Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M. (2021). On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors. IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 (reposiTUm)

740.		Feil, M. W., Puschkarsky, K., Gustin, W., Reisinger, H., Grasser, T. (2021). On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices. IEEE Transactions on Electron Devices, 68(1), 236–243. https://doi.org/10.1109/ted.2020.3036321 (reposiTUm)

739.		de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning. Micromachines, 12(4), 443. https://doi.org/10.3390/mi12040443 (reposiTUm)

738.		Quell, M., Suvorov, V., Hössinger, A., Weinbub, J. (2021). Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD. IEEE Transactions on Electron Devices, 68(11), 5430–5437. https://doi.org/10.1109/ted.2021.3087451 (reposiTUm)

737.		Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., Waltl, M. (2021). Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies. IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 (reposiTUm)

736.		Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2021). Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices. Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 (reposiTUm)

735.		Ceric, H., Selberherr, S., Zahedmanesh, H., de Orio, R. L., Croes, K. (2021). Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects. ECS Journal of Solid State Science and Technology, 10(3), 035003. https://doi.org/10.1149/2162-8777/abe7a9 (reposiTUm)

734.		Quell, M., Diamantopoulos, G., Hössinger, A., Weinbub, J. (2021). Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes. Journal of Computational and Applied Mathematics, 392(113488), 113488. https://doi.org/10.1016/j.cam.2021.113488 (reposiTUm)

733.		Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., Kosina, H., Selberherr, S. (2021). Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase. Solid-State Electronics, 184(108081), 108081. https://doi.org/10.1016/j.sse.2021.108081 (reposiTUm)

732.		Fatemeh, S., Moradinasab, M., Schwalke, U., Filipovic, L. (2021). Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications. ACS Omega, 6(29), 18770–18781. https://doi.org/10.1021/acsomega.1c01898 (reposiTUm)

731.		Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T. (2021). The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials. Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x (reposiTUm)

730.		Filipovic, L. (2021). Theoretical Examination of Thermo-Migration in Novel Platinum Microheaters. Microelectronics Reliability, 123(114219), 114219. https://doi.org/10.1016/j.microrel.2021.114219 (reposiTUm)

729.		Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021). Toward Automated Defect Extraction From Bias Temperature Instability Measurements. IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm)

728.		Mills, R. T., Adams, M., Balay, S., Brown, J., Dener, A., Knepley, M., Kruger, S., Morgan, H., Munson, T., Rupp, K., Smith, B., Zampini, S., Zhang, H., Zhang, J. (2021). Toward Performance-Portable PETSc for GPU-based Exascale Systems. Parallel Computing: Systems, Applications, 108(102831), 102831. https://doi.org/10.1016/j.parco.2021.102831 (reposiTUm)

727.		Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselbberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., Singh, R. (2021). Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics, 4(11), 786–799. https://doi.org/10.1038/s41928-021-00670-1 (reposiTUm)

726.		de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations. Solid-State Electronics, 185(108075), 108075. https://doi.org/10.1016/j.sse.2021.108075 (reposiTUm)

725.		Saleh, A., Ceric, H., Zahedmanesh, H. (2021). Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model. Journal of Applied Physics, 129(12), 125102. https://doi.org/10.1063/5.0039953 (reposiTUm)

724.		Raut, G., Shah, A. P., Sharma, V., Rajput, G., Vishvakarma, S. K. (2020). A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC Architecture. Circuits, Systems, and Signal Processing, 39(9), 4681–4694. https://doi.org/10.1007/s00034-020-01371-4 (reposiTUm)

723.		Khan, S., Shah, A. P., Chouhan, S. S., Gupta, N., Pandey, J. G., Vishvakarma, S. K. (2020). A Symmetric D Flip-Flop Based PUF with Improved Uniqueness. Microelectronics Reliability, 106(113595), 113595. https://doi.org/10.1016/j.microrel.2020.113595 (reposiTUm)

722.		Fiorentini, S., de Orio, R. L., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM. IEEE Journal of the Electron Devices Society, 8, 1249–1256. https://doi.org/10.1109/jeds.2020.3023577 (reposiTUm)

721.		Sverdlov, V., El-Sayed, E. A.-M., Kosina, H., Selberherr, S. (2020). Ballistic Conductance in a Topological 1T ’-MoS₂ Nanoribbon. Semiconductors, 54(12), 1713–1715. https://doi.org/10.1134/s1063782620120386 (reposiTUm)

720.		Shah, A. P., Waltl, M. (2020). Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM. Electronics, 9(2), 256. https://doi.org/10.3390/electronics9020256 (reposiTUm)

719.		Ferry, D. K., Nedjalkov, M., Weinbub, J., Ballicchia, M., Welland, I., Selberherr, S. (2020). Complex Systems in Phase Space. Entropy, 22(10), 1103. https://doi.org/10.3390/e22101103 (reposiTUm)

718.		Sverdlov, V., El-Sayed, A.-M. B., Kosina, H., Selberherr, S. (2020). Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T’ Phase. IEEE Transactions on Electron Devices, 67(11), 4687–4690. https://doi.org/10.1109/ted.2020.3023921 (reposiTUm)

717.		Makarov, A., Roussel, P., Bury, E., Vandemaele, M., Spessot, A., Linten, D., Kaczer, B., Tyaginov, S. (2020). Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach. Micromachines, 11(7), 657. https://doi.org/10.3390/mi11070657 (reposiTUm)

716.		Wen, C., Banshchikov, A. G., Illarionov, Y., Frammelsberger, W., Knobloch, T., Hui, F., Sokolov, N. S., Grasser, T., Lanza, M. (2020). Dielectric Properties of Ultrathin CaF₂ Ionic Crystals. Advanced Materials, 32(34), 2002525-1-2002525–2002526. (reposiTUm)

715.		Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2020). Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays. IEEE Transactions on Device and Materials Reliability, 20(2), 251–257. https://doi.org/10.1109/tdmr.2020.2985109 (reposiTUm)

714.		Illarionov, Y. Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., Grasser, T. (2020). Insulators for 2D Nanoelectronics: The Gap to Bridge. Nature Communications, 11(3385). https://doi.org/10.1038/s41467-020-16640-8 (reposiTUm)

713.		Ruch, B., Pobegen, G., Grasser, T. (2020). Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping. IEEE Transactions on Electron Devices, 67(10), 4092–4098. https://doi.org/10.1109/ted.2020.3018091 (reposiTUm)

712.		Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2020). Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities. IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 (reposiTUm)

711.		Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2020). Native High-k Oxides for 2D Transistors. Nature Electronics, 3(8), 442–443. https://doi.org/10.1038/s41928-020-0464-2 (reposiTUm)

710.		Anzt, H., Boman, E., Falgout, R., Ghysels, P., Heroux, M., Li, X., McInnes, L. C., Mills, R. T., Rajamanickam, S., Rupp, K., Smith, B., Yamazaki, I., Meier Yang, U. (2020). Preparing sparse solvers for exascale computing. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 378(2166). https://doi.org/10.1098/rsta.2019.0053 (reposiTUm)

709.		Waltl, M. (2020). Reliability of Miniaturized Transistors from the Perspective of Single-Defects. Micromachines, 11(8), 736. https://doi.org/10.3390/mi11080736 (reposiTUm)

708.		de Orio, R. L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020). Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM. Solid-State Electronics, 168(107730), 107730. https://doi.org/10.1016/j.sse.2019.107730 (reposiTUm)

707.		Stampfer, B., Schanovsky, F., Grasser, T., Waltl, M. (2020). Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors. Micromachines, 11(4). https://doi.org/10.3390/mi11040446 (reposiTUm)

706.		Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., Grasser, T. (2020). Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors. Microelectronics Reliability, 114(113746), 113746. https://doi.org/10.1016/j.microrel.2020.113746 (reposiTUm)

705.		Shah, A. P., Rossi, D., Sharma, V., Vishvakarma, S. K., Waltl, M. (2020). Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger Circuit. Microelectronics Reliability, 107(113617), 113617. https://doi.org/10.1016/j.microrel.2020.113617 (reposiTUm)

704.		Feil, M., Huerner, A., Puschkarsky, K., Schleich, C., Eichinger, T., Gustin, W., Reisinger, H., Grasser, T. (2020). The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters. Crystals, 10(12), 1143. https://doi.org/10.3390/cryst10121143 (reposiTUm)

703.		Toifl, A., Quell, M., Klemenschits, X., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2020). The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy. IEEE Access, 8, 115406–115422. https://doi.org/10.1109/access.2020.3004136 (reposiTUm)

702.		Berens, J. V., Pobegen, G., Grasser, T. (2020). Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs. Materials Science Forum, 1004, 652–658. https://doi.org/10.4028/www.scientific.net/msf.1004.652 (reposiTUm)

701.		de Orio, R. L., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020). Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer. Physica B: Condensed Matter, 578(411743), 411743. https://doi.org/10.1016/j.physb.2019.411743 (reposiTUm)

700.		Waltl, M. (2020). Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors. IEEE Transactions on Device and Materials Reliability, 20(2), 242–250. https://doi.org/10.1109/tdmr.2020.2988650 (reposiTUm)

699.		Filipovic, L. (2019). A Method for Simulating the Influence of Grain Boundaries and Material Interfaces on Electromigration. Microelectronics Reliability, 97, 38–52. https://doi.org/10.1016/j.microrel.2019.04.005 (reposiTUm)

698.		Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2019). A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing. Advances in Computational Mathematics, 45(4), 2029–2045. https://doi.org/10.1007/s10444-019-09683-z (reposiTUm)

697.		Jech, M., El-Sayed, A.-M., Tyaginov, S., Shluger, A. L., Grasser, T. (2019). Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO₂ Interfaces. Physical Review B, 100(195302). https://doi.org/10.1103/physrevb.100.195302 (reposiTUm)

696.		Safari, F., Moradinasab, M., Fathipour, M., Kosina, H. (2019). Adsorption of the NH3, NO, NO2, CO2, and CO Gas Molecules on Blue Phosphorene: A First-Principles Study. Applied Surface Science, 464, 153–161. https://doi.org/10.1016/j.apsusc.2018.09.048 (reposiTUm)

695.		Puschkarsky, K., Reisinger, H., Rott, G. A., Schluender, C., Gustin, W., Grasser, T. (2019). An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps. IEEE Transactions on Electron Devices, 66(11), 4623–4630. https://doi.org/10.1109/ted.2019.2941889 (reposiTUm)

694.		Sanvale, P., Gupta, N., Neema, V., Shah, A. P., Vishvakarma, S. K. (2019). An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor Networ. Microelectronics Journal, 92(104611), 104611. https://doi.org/10.1016/j.mejo.2019.104611 (reposiTUm)

693.		Khan, S., Shah, A. P., Gupta, N., Chouhan, S. S., Pandey, J. G., Vishvakarma, S. K. (2019). An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT Applications. Microelectronics Journal, 92(104605), 104605. https://doi.org/10.1016/j.mejo.2019.104605 (reposiTUm)

692.		Ceric, H., Zahedmanesh, H., Croes, K. (2019). Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods. Microelectronics Reliability, 100–101(113362), 113362. https://doi.org/10.1016/j.microrel.2019.06.054 (reposiTUm)

691.		Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019). Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach. IEEE Electron Device Letters, 40(10), 1579–1582. https://doi.org/10.1109/led.2019.2933729 (reposiTUm)

690.		Bernhard, R., Pobegen, G., Rösch, M., Vytla, R. K., Grasser, T. (2019). Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs. IEEE Transactions on Device and Materials Reliability, 19(1), 133–139. https://doi.org/10.1109/tdmr.2019.2891794 (reposiTUm)

689.		Berens, J., Pobegen, G., Eichinger, T., Rescher, G., Grasser, T. (2019). Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs. Materials Science Forum, 963, 175–179. https://doi.org/10.4028/www.scientific.net/msf.963.175 (reposiTUm)

688.		Sverdlov, V., Selberherr, S. (2019). Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts. Solid-State Electronics, 159, 43–50. https://doi.org/10.1016/j.sse.2019.03.053 (reposiTUm)

687.		Ghosh, J., Osintsev, D., Sverdlov, V. (2019). Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm. Journal of Computational Electronics, 18(1), 28–36. https://doi.org/10.1007/s10825-018-1274-x (reposiTUm)

686.		Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T. (2019). Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs. Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 (reposiTUm)

685.		Jing, X., Illarionov, Y., Yalon, E., Zhou, P., Grasser, T., Shi, Y., Lanza, M. (2019). Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects. Advanced Functional Materials, 30(18), 1901971. https://doi.org/10.1002/adfm.201901971 (reposiTUm)

684.		Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., Grasser, T. (2019). Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques. IEEE Transactions on Device and Materials Reliability, 19(2), 358–362. https://doi.org/10.1109/tdmr.2019.2909993 (reposiTUm)

683.		Oliva, N., Illarionov, Y. Y., Casu, E. A., Cavalieri, M., Knobloch, T., Grasser, T., Ionescu, A. M. (2019). Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric. IEEE Journal of the Electron Devices Society, 7, 1163–1169. https://doi.org/10.1109/jeds.2019.2933745 (reposiTUm)

682.		Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental. IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 (reposiTUm)

681.		Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory. IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm)

680.		Wu, Z., Franco, J., Vandooren, A., Kaczer, B., Roussel, P., Rzepa, G., Grasser, T. (2019). Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration. IEEE Transactions on Device and Materials Reliability, 19(2), 262–267. https://doi.org/10.1109/tdmr.2019.2906843 (reposiTUm)

679.		Lahlalia, A., Le Neel, O., Shankar, R., Selberherr, S., Filipovic, L. (2019). Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices. Sensors, 19(2), 374. https://doi.org/10.3390/s19020374 (reposiTUm)

678.		Ballicchia, M., Ferry, D., Nedjalkov, M., Weinbub, J. (2019). Investigating Quantum Coherence by Negative Excursions of the Wigner Quasi-Distribution. Applied Sciences, 9(7), 1344. https://doi.org/10.3390/app9071344 (reposiTUm)

677.		Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carillo-Nunez, H., Lee, J., Badami, O., Georgiev, V., Selberherr, S., Asenov, A. (2019). Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism. IEEE Electron Device Letters, 40(10), 1571–1574. https://doi.org/10.1109/led.2019.2934349 (reposiTUm)

676.		Giering, K.-U., Puschkarsky, K., Reisinger, H., Rzepa, G., Rott, G., Vollertsen, R., Grasser, T., Jancke, R. (2019). NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling. IEEE Transactions on Electron Devices, 66(4), 1662–1668. https://doi.org/10.1109/ted.2019.2901907 (reposiTUm)

675.		Berens, J., Pobegen, G., Rescher, G., Aichinger, T., Grasser, T. (2019). NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability. IEEE Transactions on Electron Devices, 66(11), 4692–4697. https://doi.org/10.1109/ted.2019.2941723 (reposiTUm)

674.		Franco, J., Wu, Z., Rzepa, G., Ragnarsson, L.-A., Dekkers, H., Vandooren, A., Groeseneken, G., Horiguchi, N., Collaert, N., Linten, D., Grasser, T., Kaczer, B. (2019). On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI. IEEE Transactions on Device and Materials Reliability, 19(2), 268–274. https://doi.org/10.1109/tdmr.2019.2913258 (reposiTUm)

673.		Foster, S., Thesberg, M., Neophytou, N. (2019). Quantum Transport Simulations for the Thermoelectric Power Factor in 2D Nanocomposites. Materials Today: Proceedings, 8, 690–695. https://doi.org/10.1016/j.matpr.2019.02.069 (reposiTUm)

672.		Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019). Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators. 2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 (reposiTUm)

671.		Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H. (2019). Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability. IEEE Transactions on Electron Devices, 66(11), 4604–4616. https://doi.org/10.1109/ted.2019.2938262 (reposiTUm)

670.		Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., Weinbub, J. (2019). Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics. IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929 (reposiTUm)

669.		Sadi, T., Medina-Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2019). Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors. Materials, 12(1), 124. https://doi.org/10.3390/ma12010124 (reposiTUm)

668.		Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019). Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs. IEEE Electron Device Letters, 40(6), 870–873. https://doi.org/10.1109/led.2019.2913625 (reposiTUm)

667.		Woerle, J., Šimonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., Grossner, U. (2019). Surface Morphology of 4H-SiC After Thermal Oxidation. Materials Science Forum, 963, 180–183. https://doi.org/10.4028/www.scientific.net/msf.963.180 (reposiTUm)

666.		Vargiamidis, V., Thesberg, M., Neophytou, N. (2019). Theoretical Model for the Seebeck Coefficient in Superlattice Materials with Energy Relaxation. Journal of Applied Physics, 126(5), 055105. https://doi.org/10.1063/1.5108607 (reposiTUm)

665.		Filipovic, L., Selberherr, S. (2019). Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors. Materials, 12(15), 2410. https://doi.org/10.3390/ma12152410 (reposiTUm)

664.		Kittler, M., Reiche, M., Schwartz, B., Uebensee, H., Kosina, H., Stanojevic, Z., Baumgartner, O., Ortlepp, T. (2019). Transport of Charge Carriers along Dislocations in Si and Ge. Physica Status Solidi (a) – Applications and Materials Science, 216(17), 1900287. https://doi.org/10.1002/pssa.201900287 (reposiTUm)

663.		Banshchikov, A. G., Illarionov, Yu. Yu., Vexler, M. I., Wachter, S., Sokolov, N. S. (2019). Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer. Semiconductors, 53(6), 833–837. https://doi.org/10.1134/s1063782619060034 (reposiTUm)

662.		Sverdlov, V., Makarov, A., Selberherr, S. (2019). Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM. Solid-State Electronics, 155, 49–56. https://doi.org/10.1016/j.sse.2019.03.010 (reposiTUm)

661.		Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019). Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors. Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 (reposiTUm)

660.		Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D. K. (2019). Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform. Physical Review B, 99(014423). https://doi.org/10.1103/physrevb.99.014423 (reposiTUm)

659.		Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T. (2018). A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability. Microelectronics Reliability, 81, 186–194. https://doi.org/10.1016/j.microrel.2017.11.022 (reposiTUm)

658.		Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018). A Physical Model for the Hysteresis in MoS2 Transistors. IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm)

657.		Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018). Analysis of the Features of Hot-Carrier Degradation in FinFETs. Semiconductors, 52(10), 1298–1302. https://doi.org/10.1134/s1063782618100081 (reposiTUm)

656.		Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018). Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm)

655.		Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P. J., Linten, D., Kaczer, B., Grasser, T. (2018). Comphy -- A Compact-Physics Framework for Unified Modeling of BTI. Microelectronics Reliability, 85, 49–65. https://doi.org/10.1016/j.microrel.2018.04.002 (reposiTUm)

654.		Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2018). Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning. Materials Science Forum, 924, 671–675. https://doi.org/10.4028/www.scientific.net/msf.924.671 (reposiTUm)

653.		Stathis, J. H., Mahapatra, S., Grasser, T. (2018). Controversial Issues in Negative Bias Temperature Instability. Microelectronics Reliability, 81, 244–251. https://doi.org/10.1016/j.microrel.2017.12.035 (reposiTUm)

652.		Sverdlov, V., Selberherr, S. (2018). Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing. Facta Universitatis - Series: Electronics and Energetics, 31(4), 529–545. https://doi.org/10.2298/fuee1804529s (reposiTUm)

651.		El-Sayed, A.-M., Watkins, M. B., Grasser, T., Shluger, A. L. (2018). Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO. Physical Review B, 98(064102). https://doi.org/10.1103/physrevb.98.064102 (reposiTUm)

650.		Lahlalia, A., Le Neel, O., Shankar, R., Kam, S. Y., Filipovic, L. (2018). Electro-Thermal Simulation, Characterization of a Microheater for SMO Gas Sensors. Journal of Microelectromechanical Systems, 27(3), 529–537. https://doi.org/10.1109/jmems.2018.2822942 (reposiTUm)

649.		Ballicchia, M., Weinbub, J., Nedjalkov, M. (2018). Electron Evolution Around a Repulsive Dopant in a Quantum Wire: Coherence Effects. Nanoscale, 10(48), 23037–23049. https://doi.org/10.1039/c8nr06933f (reposiTUm)

648.		Weinbub, J., Ballicchia, M., Nedjalkov, M. (2018). Electron Interference in a Double-Dopant Potential Structure. Physica Status Solidi (RRL) - Rapid Research Letters, 12(7), 1800111. https://doi.org/10.1002/pssr.201800111 (reposiTUm)

647.		Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018). Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide. IEEE Transactions on Electron Devices, 65(2), 674–679. https://doi.org/10.1109/ted.2017.2786086 (reposiTUm)

646.		Goes, W., Wimmer, Y., El-Sayed, A.-M., Rzepa, G., Jech, M., Shluger, A. L., Grasser, T. (2018). Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence. Microelectronics Reliability, 87, 286–320. https://doi.org/10.1016/j.microrel.2017.12.021 (reposiTUm)

645.		Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018). Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs. Semiconductors, 52(13), 1738–1742. https://doi.org/10.1134/s1063782618130183 (reposiTUm)

644.		Strand, J., Moloud, K., Gao, D., El-Sayed, A.-M. B., Afanas´Ev, V., Shluger, A. L. (2018). Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges. Journal of Physics: Condensed Matter, 30(23), 233001. https://doi.org/10.1088/1361-648x/aac005 (reposiTUm)

643.		Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018). Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide. Materials Science Forum, 924, 192–195. https://doi.org/10.4028/www.scientific.net/msf.924.192 (reposiTUm)

642.		Lahlalia, A., Filipovic, L., Selberherr, S. (2018). Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices. IEEE Sensors Journal, 18(5), 1960–1970. https://doi.org/10.1109/jsen.2018.2790001 (reposiTUm)

641.		Klemenschits, X., Selberherr, S., Filipovic, L. (2018). Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review. Micromachines, 9(12), 631. https://doi.org/10.3390/mi9120631 (reposiTUm)

640.		Illarionov, Yu. Yu., Banshchikov, A. G., Sokolov, N. S., Wachter, S., Vexler, M. I. (2018). Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System). Technical Physics Letters, 44(12), 1188–1191. https://doi.org/10.1134/s1063785018120441 (reposiTUm)

639.		Tyaginov, S. E., Makarov, A. A., Jech, M., Vexler, M. I., Franco, J., Kaczer, B., Grasser, T. (2018). Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures. Semiconductors, 52(2), 242–247. https://doi.org/10.1134/s1063782618020203 (reposiTUm)

638.		Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2018). Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique. IEEE Transactions on Electron Devices, 65(4), 1419–1426. https://doi.org/10.1109/ted.2018.2803283 (reposiTUm)

637.		Weinbub, J., Ferry, D. K. (2018). Recent Advances in Wigner Function Approaches. Applied Physics Reviews, 5(4), 041104. https://doi.org/10.1063/1.5046663 (reposiTUm)

636.		Sverdlov, V., Makarov, A., Selberherr, S. (2018). Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field. Journal on Systemics, Cybernetics and Informatics, 16(2), 55–59. (reposiTUm)

635.		Filipovic, L., Lahlalia, A. (2018). Review—System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology. Journal of The Electrochemical Society, 165(16), 862–879. https://doi.org/10.1149/2.0731816jes (reposiTUm)

634.		Meller, G., Selberherr, S. (2018). Simulation of Injection Currents into Disordered Molecular Conductors. Materials Today: Proceedings, 5(9), 17472–17477. https://doi.org/10.1016/j.matpr.2018.06.051 (reposiTUm)

633.		Nedjalkov, M., Ellinghaus, P., Weinbub, J., Sadi, T., Asenov, A., Dimov, I., Selberherr, S. (2018). Stochastic Analysis of Surface Roughness Models in Quantum Wires. Computer Physics Communications, 228, 30–37. https://doi.org/10.1016/j.cpc.2018.03.010 (reposiTUm)

632.		Kampl, M., Kosina, H. (2018). The Backward Monte Carlo Method for Semiconductor Device Simulation. Journal of Computational Electronics, 17, 1492–1504. https://doi.org/10.1007/s10825-018-1225-6 (reposiTUm)

631.		Šimonka, V., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J. (2018). Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide. Journal of Applied Physics, 123(23), 235701. https://doi.org/10.1063/1.5031185 (reposiTUm)

630.		Puschkarsky, K., Reisinger, H., Aichinger, T., Gustin, W., Grasser, T. (2018). Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation. IEEE Transactions on Device and Materials Reliability, 18(2), 144–153. https://doi.org/10.1109/tdmr.2018.2813063 (reposiTUm)

629.		Puschkarsky, K., Reisinger, H., Schlünder, C., Gustin, W., Grasser, T. (2018). Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation. IEEE Transactions on Electron Devices, 65(11), 4764–4771. https://doi.org/10.1109/ted.2018.2870170 (reposiTUm)

628.		Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S. (2017). Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics. Physica Status Solidi (RRL) - Rapid Research Letters, 11(7), 1700102-1-1700102–1700105. (reposiTUm)

627.		Šimonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2017). Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation. Solid-State Electronics, 128, 135–140. https://doi.org/10.1016/j.sse.2016.10.032 (reposiTUm)

626.		Brinciotti, E., Badino, G., Knaipp, M., Gramse, G., Smoliner, J., Kienberger, F. (2017). Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy. IEEE Transactions on Nanotechnology, 16(2), 245–252. https://doi.org/10.1109/tnano.2017.2657888 (reposiTUm)

625.		Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., Grasser, T. (2017). Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs. IEEE Transactions on Electron Devices, 64(3), 1045–1052. https://doi.org/10.1109/ted.2017.2655367 (reposiTUm)

624.		Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2017). Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs. Applied Physics Letters, 110(17), 173502. https://doi.org/10.1063/1.4982231 (reposiTUm)

623.		Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., Grasser, T. (2017). Energetic mapping of oxide traps in MoS₂ field-effect transistors. 2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a (reposiTUm)

622.		Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2017). Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity. Solid-State Electronics, 128, 141–147. https://doi.org/10.1016/j.sse.2016.10.029 (reposiTUm)

621.		Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., Grasser, T. (2017). Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps. Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 (reposiTUm)

620.		Sharma, P., Tyaginov, S., Rauch, S. E., Franco, J., Makarov, A., Vexler, M. I., Kaczer, B., Grasser, T. (2017). Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach. IEEE Electron Device Letters, 38(2), 160–163. https://doi.org/10.1109/led.2016.2645901 (reposiTUm)

619.		Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., Grasser, T. (2017). Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation. IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 (reposiTUm)

618.		Rescher, G., Pobegen, G., Aichinger, T., Grasser, T. (2017). Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique. Materials Science Forum, 897, 143–146. https://doi.org/10.4028/www.scientific.net/msf.897.143 (reposiTUm)

617.		Kaczer, B., Franco, J., Tyaginov, S., Jech, M., Rzepa, G., Grasser, T., O’Sullivan, B. J., Ritzenhaler, R., Schram, T., Spessot, A., Linten, D., Horiguchi, N. (2017). Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices. Journal of Vacuum Science, Technology B, 35(1), 01A109. https://doi.org/10.1116/1.4972872 (reposiTUm)

616.		Thesberg, M., Kosina, H., Neophytou, N. (2017). On the Lorenz Number of Multiband Materials. Physical Review B, 95(12), 1–14. https://doi.org/10.1103/PhysRevB.95.125206 (reposiTUm)

615.		Song, X., Hui, F., Knobloch, T., Wang, B., Fan, Z., Grasser, T., Jing, X., Shi, Y., Lanza, M. (2017). Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide. Applied Physics Letters, 111(8), 083107. https://doi.org/10.1063/1.5000496 (reposiTUm)

614.		Vexler, M. I., Illarionov, Yu. Yu., Grekhov, I. V. (2017). Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling. Semiconductors, 51(4), 444–448. https://doi.org/10.1134/s1063782617040224 (reposiTUm)

613.		Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017). ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation. The Journal of Physical Chemistry A, 121(46), 8791–8798. https://doi.org/10.1021/acs.jpca.7b08983 (reposiTUm)

612.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Spintronics as a Non-Volatile Complement to Modern Microelectronics. Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47(4), 195–210. (reposiTUm)

611.		Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017). Superior NBTI in High-k SiGe Transistors - Part I: Experimental. IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 (reposiTUm)

610.		Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017). Superior NBTI in High-k SiGe Transistors - Part II: Theory. IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 (reposiTUm)

609.		Foster, S., Thesberg, M., Neophytou, N. (2017). Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations. Physical Review B, 96(195425). https://doi.org/10.1103/physrevb.96.195425 (reposiTUm)

608.		Ullmann, B., Grasser, T. (2017). Transformation: nanotechnology—challenges in transistor design and future technologies. Elektrotechnik Und Informationstechnik : E, i, 134(7), 349–354. https://doi.org/10.1007/s00502-017-0534-y (reposiTUm)

607.		Manstetten, P., Weinbub, J., Hössinger, A., Selberherr, S. (2017). Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces. Procedia Computer Science, 108, 245–254. https://doi.org/10.1016/j.procs.2017.05.067 (reposiTUm)

606.		Rupp, K., Jungemann, C., Hong, S.-M., Bina, M., Grasser, T., Jüngel, A. (2016). A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation. Journal of Computational Electronics. https://doi.org/10.1007/s10825-016-0828-z (reposiTUm)

605.		Azar, N. S., Pourfath, M. (2016). Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents. Journal of Physical Chemistry C, 120(30), 16804–16814. https://doi.org/10.1021/acs.jpcc.6b05318 (reposiTUm)

604.		Illarionov, Y. Yu., Waltl, M., Smith, A. D., Vaziri, S., Ostling, M., Lemme, M. C., Grasser, T. (2016). Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors. Japanese Journal of Applied Physics, 55(4S), 04EP03. https://doi.org/10.7567/jjap.55.04ep03 (reposiTUm)

603.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2016). CMOS-Compatible Spintronic Devices: A Review. Semiconductor Science and Technology, 31(11), 113006. https://doi.org/10.1088/0268-1242/31/11/113006 (reposiTUm)

602.		Stradiotto, R., Pobegen, G., Ostermaier, C., Grasser, T. (2016). Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces. Solid-State Electronics, 125, 142–153. https://doi.org/10.1016/j.sse.2016.07.017 (reposiTUm)

601.		Weinbub, J., Hössinger, A. (2016). Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method. Procedia Computer Science, 80, 2271–2275. https://doi.org/10.1016/j.procs.2016.05.408 (reposiTUm)

600.		Reiche, M., Kittler, M., Pippel, E., Kosina, H., Lugstein, A., Uebensee, H. (2016). Electronic Properties of Dislocations. Solid State Phenomena, 242, 141–146. https://doi.org/10.4028/www.scientific.net/ssp.242.141 (reposiTUm)

599.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2016). Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress. Journal of Nano Research, 39, 34–42. https://doi.org/10.4028/www.scientific.net/jnanor.39.34 (reposiTUm)

598.		Jing, X., Panholzer, E., Song, X., Grustan-Gutierrez, E., Hui, F., Shi, Y., Benstetter, G., Illarionov, Y., Grasser, T., Lanza, M. (2016). Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets. Nano Energy, 30, 494–502. https://doi.org/10.1016/j.nanoen.2016.10.032 (reposiTUm)

597.		Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016). Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide. Journal of Applied Physics, 120(13), 135705. https://doi.org/10.1063/1.4964688 (reposiTUm)

596.		Zeraati, M., Vaez Allaei, S. M., Abdolhosseini Sarsari, I., Pourfath, M., Donadio, D. (2016). Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study. Physical Review B, 93(085424). https://doi.org/10.1103/physrevb.93.085424 (reposiTUm)

595.		Reiche, M., Kittler, M., Pippel, E., Uebensee, H., Kosina, H., Grill, A., Stanojevic, Z., Baumgartner, O. (2016). Impact of Defect-Induced Strain on Device Properties. Advanced Engineering Materials, 18(12), 1–4. (reposiTUm)

594.		Illarionov, Y. Y., Waltl, M., Rzepa, G., Kim, J.-S., Kim, S., Dodabalapur, A., Akinwande, D., Grasser, T. (2016). Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors. ACS Nano, 10(10), 9543–9549. https://doi.org/10.1021/acsnano.6b04814 (reposiTUm)

593.		Neophytou, N., Thesberg, M. (2016). Modulation Doping and Energy Filtering as Effective Ways to Improve the Thermoelectric Power Factor. Journal of Computational Electronics, 15(1), 16–26. https://doi.org/10.1007/s10825-016-0792-7 (reposiTUm)

592.		Thesberg, M., Kosina, H., Neophytou, N. (2016). On the Effectiveness of the Thermoelectric Energy Filtering Mechanism in Low-Dimensional Superlattices and Nano-Composites. Journal of Applied Physics, 120(23), 234302. https://doi.org/10.1063/1.4972192 (reposiTUm)

591.		Jech, M., Sharma, P., Tyaginov, S., Rudolf, F., Grasser, T. (2016). On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling. Japanese Journal of Applied Physics, 55(4S), 04ED14. https://doi.org/10.7567/jjap.55.04ed14 (reposiTUm)

590.		Rupp, K., Weinbub, J., Jüngel, A., Grasser, T. (2016). Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units. ACM Transactions on Mathematical Software, 43(2), 1–27. https://doi.org/10.1145/2907944 (reposiTUm)

589.		Vexler, M. I., Kareva, G. G., Illarionov, Yu. Yu., Grekhov, I. V. (2016). Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures. Technical Physics Letters, 42(11), 1090–1093. https://doi.org/10.1134/s1063785016110109 (reposiTUm)

588.		Wimmer, Y., El-Sayed, A.-M., Gös, W., Grasser, T., Shluger, A. L. (2016). Role of hydrogen in volatile behaviour of defects in SiO₂-based electronic devices. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 472(2190). https://doi.org/10.1098/rspa.2016.0009 (reposiTUm)

587.		Chaghazardi, Z., Touski, S. B., Pourfath, M., Faez, R. (2016). Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness. Journal of Applied Physics, 120(5), 053904. https://doi.org/10.1063/1.4960354 (reposiTUm)

586.		Filipovic, L., Selberherr, S. (2016). Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology. IEEE Transactions on Device and Materials Reliability, 16(4), 483–495. https://doi.org/10.1109/tdmr.2016.2625461 (reposiTUm)

585.		Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., Selberherr, S. (2016). Stress Evolution During Nanoindentation in Open TSVs. IEEE Transactions on Device and Materials Reliability, 16(4), 470–474. https://doi.org/10.1109/tdmr.2016.2622727 (reposiTUm)

584.		Filipovic, L., Selberherr, S. (2016). Stress in Three-Dimensionally Integrated Sensor Systems. Microelectronics Reliability, 61, 3–10. https://doi.org/10.1016/j.microrel.2015.09.013 (reposiTUm)

583.		Glaser, M., Kitzler, A., Johannes, A., Prucnal, S., Potts, H., Conesa-Boj, S., Filipovic, L., Kosina, H., Skorupa, W., Bertagnolli, E., Ronning, C., Fontcuberta i Morral, A., Lugstein, A. (2016). Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures. Nano Letters, 16(6), 3507–3513. https://doi.org/10.1021/acs.nanolett.6b00315 (reposiTUm)

582.		Kaczer, B., Franco, J., Weckx, P., Roussel, Ph. J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa, G., Waltl, M., Goes, W., Grasser, T. (2016). The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits. Solid-State Electronics, 125, 52–62. https://doi.org/10.1016/j.sse.2016.07.010 (reposiTUm)

581.		Nazemi, S., Pourfath, M., Soleimani, E. A., Kosina, H. (2016). The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study. Journal of Applied Physics, 119(14), 144302. https://doi.org/10.1063/1.4945392 (reposiTUm)

580.		Thesberg, M., Pourfath, M., Neophytou, N., Kosina, H. (2016). The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach. Journal of Electronic Materials, 45(3), 1584–1588. https://doi.org/10.1007/s11664-015-4124-7 (reposiTUm)

579.		Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2016). The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices. Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 (reposiTUm)

578.		Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016). The role of charge trapping in Mo₂/SiO₂ and MoS₂/hBN field-effect transistors. 2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm)

577.		Rescher, G., Pobegen, G., Grasser, T. (2016). Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress. Materials Science Forum, 858, 481–484. https://doi.org/10.4028/www.scientific.net/msf.858.481 (reposiTUm)

576.		Tyaginov, S., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016). Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs. IEEE Electron Device Letters, 37(1), 84–87. https://doi.org/10.1109/led.2015.2503920 (reposiTUm)

575.		Rupp, K., Tillet, P., Rudolf, F., Weinbub, J., Morhammer, A., Grasser, T., Jüngel, A., Selberherr, S. (2016). ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures. SIAM Journal on Scientific Computing, 38(5), S412–S439. https://doi.org/10.1137/15m1026419 (reposiTUm)

574.		Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S. (2015). A Comparison of Approaches for the Solution of the Wigner Equation. Mathematics and Computers in Simulation, 107, 108–119. https://doi.org/10.1016/j.matcom.2014.06.001 (reposiTUm)

573.		Azar, N. S., Pourfath, M. (2015). A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites. IEEE Transactions on Electron Devices, 62(5), 1584–1589. https://doi.org/10.1109/ted.2015.2411992 (reposiTUm)

572.		Vexler, M. I., Illarionov, Yu. Yu., Tyaginov, S. E., Grasser, T. (2015). Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices. Semiconductors, 49(2), 259–263. https://doi.org/10.1134/s1063782615020207 (reposiTUm)

571.		Sellier, J. M., Nedjalkov, M., Dimov, I. (2015). An Introduction to Applied Quantum Mechanics in the Wigner Monte Carlo Formalism. Physics Reports, 577, 1–34. https://doi.org/10.1016/j.physrep.2015.03.001 (reposiTUm)

570.		Dimov, I., Nedjalkov, M., Sellier, J.-M., Selberherr, S. (2015). Boundary Conditions and the Wigner Equation Solution. Journal of Computational Electronics, 14(4), 859–863. https://doi.org/10.1007/s10825-015-0720-2 (reposiTUm)

569.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2015). Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs. Microelectronics Reliability, 55(9–10), 1427–1432. https://doi.org/10.1016/j.microrel.2015.06.021 (reposiTUm)

568.		Stanojević, Z., Baumgartner, O., Filipović, L., Kosina, H., Karner, M., Kernstock, C., Prause, P. (2015). Consistent Low-Field Mobility Modeling for Advanced MOS Devices. Solid-State Electronics, 112, 37–45. https://doi.org/10.1016/j.sse.2015.02.008 (reposiTUm)

567.		Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., de Orio, R. L., Selberherr, S. (2015). Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias. Microelectronic Engineering, 137, 141–145. https://doi.org/10.1016/j.mee.2014.11.014 (reposiTUm)

566.		Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S., Dimov, I. (2015). Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition. Journal of Computational Electronics, 14(1), 151–162. https://doi.org/10.1007/s10825-014-0635-3 (reposiTUm)

565.		Weinbub, J., Ellinghaus, P., Nedjalkov, M. (2015). Domain Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method. Journal of Computational Electronics, 14(4), 922–929. https://doi.org/10.1007/s10825-015-0730-0 (reposiTUm)

564.		Palankovski, V., Vainshtein, S., Yuferev, V., Kostamovaara, J., Egorkin, V. (2015). Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs. Applied Physics Letters, 106(18), 183505. https://doi.org/10.1063/1.4921006 (reposiTUm)

563.		Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films. Solid-State Electronics, 112, 46–50. https://doi.org/10.1016/j.sse.2015.02.007 (reposiTUm)

562.		Coppeta, R. A., Holec, D., Ceric, H., Grasser, T. (2015). Evaluation of Dislocation Energy in Thin Films. Philosophical Magazine, 95(2), 186–209. https://doi.org/10.1080/14786435.2014.994573 (reposiTUm)

561.		Kaczer, B., Franco, J., Roussel, P. J., Groeseneken, G., Chiarella, T., Horiguchi, N., Grasser, T. (2015). Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs. IEEE Electron Device Letters, 36(4), 300–302. https://doi.org/10.1109/led.2015.2404293 (reposiTUm)

560.		Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Kaczer, B., Reisinger, H., Grasser, T. (2015). Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs. IEEE Transactions on Electron Devices, 62(9), 2730–2737. https://doi.org/10.1109/ted.2015.2454433 (reposiTUm)

559.		Asad, M., Salimian, S., Sheikhi, M. H., Pourfath, M. (2015). Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS₂ Nanoparticles. Sensors and Actuators A: Physical, 232, 285–291. https://doi.org/10.1016/j.sna.2015.06.018 (reposiTUm)

558.		Asad, M., Sheikhi, M. H., Pourfath, M., Moradi, M. (2015). High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs. Sensors and Actuators B: Chemical, 210, 1–8. https://doi.org/10.1016/j.snb.2014.12.086 (reposiTUm)

557.		El-Sayed, A.-M., Watkins, M. B., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015). Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide. Microelectronic Engineering, 147, 141–144. https://doi.org/10.1016/j.mee.2015.04.073 (reposiTUm)

556.		Illarionov, Y., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., Grasser, T. (2015). Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences. IEEE Transactions on Electron Devices, 62(11), 3876–3881. https://doi.org/10.1109/ted.2015.2480704 (reposiTUm)

555.		El-Sayed, A.-M., Watkins, M. B., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015). Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide. Physical Review Letters, 114(115503). https://doi.org/10.1103/physrevlett.114.115503 (reposiTUm)

554.		Wang, L., Brown, A. R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A. (2015). Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs. IEEE Transactions on Electron Devices, 62(7), 2106–2112. https://doi.org/10.1109/ted.2015.2436351 (reposiTUm)

553.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop. Solid-State Electronics, 108, 2–7. https://doi.org/10.1016/j.sse.2014.12.023 (reposiTUm)

552.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures. Microelectronic Engineering, 147, 89–91. https://doi.org/10.1016/j.mee.2015.04.072 (reposiTUm)

551.		Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., Selberherr, S. (2015). Intrinsic Stress Analysis of Tungsten-Lined Open TSVs. Microelectronics Reliability, 55(9–10), 1843–1848. https://doi.org/10.1016/j.microrel.2015.06.014 (reposiTUm)

550.		Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G. (2015). Investigation of Novel Silicon PV Cells of a Lateral Type. Silicon, 7(3), 283–291. https://doi.org/10.1007/s12633-014-9227-x (reposiTUm)

549.		Karamitaheri, H., Pourfath, M., Kosina, H., Neophytou, N. (2015). Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons. Physical Review B, 91(165410). https://doi.org/10.1103/physrevb.91.165410 (reposiTUm)

548.		Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., Grasser, T. (2015). Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation. IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 (reposiTUm)

547.		Windbacher, T., Ghosh, J., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Modelling of Multipurpose Spintronic Devices. International Journal of Nanotechnology, 12(3/4), 313. https://doi.org/10.1504/ijnt.2015.067215 (reposiTUm)

546.		Elahi, M., Khaliji, K., Tabatabaei, S. M., Pourfath, M., Asgari, R. (2015). Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain. Physical Review B, 91(115412). https://doi.org/10.1103/physrevb.91.115412 (reposiTUm)

545.		Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2015). Numerical Study of Graphene Superlattice-Based Photodetectors. IEEE Transactions on Electron Devices, 62(2), 593–600. https://doi.org/10.1109/ted.2014.2383354 (reposiTUm)

544.		Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Kaczer, B., Grasser, T. (2015). On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation. Japanese Journal of Applied Physics, 54(4S), 04DC18. https://doi.org/10.7567/jjap.54.04dc18 (reposiTUm)

543.		Nazemi, S., Pourfath, M., Soleimani, E. A., Kosina, H. (2015). On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals. Journal of Applied Physics, 118(20), 205303. https://doi.org/10.1063/1.4936310 (reposiTUm)

542.		Moradinasab, M., Pourfath, M., Kosina, H. (2015). Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers. IEEE Journal of Quantum Electronics, 51(1), 1–7. https://doi.org/10.1109/jqe.2014.2373171 (reposiTUm)

541.		Filipovic, L., Selberherr, S. (2015). Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors. Sensors, 15(4), 7206–7227. https://doi.org/10.3390/s150407206 (reposiTUm)

540.		Sverdlov, V., Selberherr, S. (2015). Silicon Spintronics: Progress and Challenges. Physics Reports, 585, 1–40. https://doi.org/10.1016/j.physrep.2015.05.002 (reposiTUm)

539.		Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015). Strain Induced Mobility Modulation in Single-Layer MoS₂. Journal of Physics D: Applied Physics, 48(37), 375104. https://doi.org/10.1088/0022-3727/48/37/375104 (reposiTUm)

538.		Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015). Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S , Se). IEEE Transactions on Electron Devices, 62(10), 3192–3198. https://doi.org/10.1109/ted.2015.2461617 (reposiTUm)

537.		Illarionov, Yu. Yu., Vexler, M. I., Karner, M., Tyaginov, S. E., Cervenka, J., Grasser, T. (2015). TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures. Current Applied Physics, 15(2), 78–83. https://doi.org/10.1016/j.cap.2014.10.015 (reposiTUm)

536.		Thesberg, M., Pourfath, M., Kosina, H., Neophytou, N. (2015). The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices. Journal of Applied Physics, 118(22), 224301. https://doi.org/10.1063/1.4936839 (reposiTUm)

535.		Nedjalkov, M., Weinbub, J., Ellinghaus, P., Selberherr, S. (2015). The Wigner Equation in the Presence of Electromagnetic Potentials. Journal of Computational Electronics, 14(4), 888–893. https://doi.org/10.1007/s10825-015-0732-y (reposiTUm)

534.		El-Sayed, A.-M., Wimmer, Y., Goes, W., Grasser, T., Afanas’ev, V. V., Shluger, A. L. (2015). Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide. Physical Review B, 92(014107). https://doi.org/10.1103/physrevb.92.014107 (reposiTUm)

533.		Rudolf, F., Rupp, K., Weinbub, J., Morhammer, A., Selberherr, S. (2015). Transformation Invariant Local Element Size Specification. Applied Mathematics and Computation, 267, 195–206. https://doi.org/10.1016/j.amc.2015.04.027 (reposiTUm)

532.		Neophytou, N., Karamitaheri, H., Kosina, H. (2015). Use of Field-Effect Density Modulation to Increase ZT for Si Nanowires: A Simulation Study. Journal of Electronic Materials, 44(6), 1599–1605. https://doi.org/10.1007/s11664-014-3488-4 (reposiTUm)

531.		Ghobadi, N., Pourfath, M. (2015). Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing. IEEE Electron Device Letters, 36(3), 280–282. https://doi.org/10.1109/led.2014.2388452 (reposiTUm)

530.		Hosseini, M., Elahi, M., Pourfath, M., Esseni, D. (2015). Very Large Strain Gauges Based on Single Layer MoSe₂ and WSe₂ for Sensing Applications. Applied Physics Letters, 107(25), 253503. https://doi.org/10.1063/1.4937438 (reposiTUm)

529.		Weinbub, J., Wastl, M., Rupp, K., Rudolf, F., Selberherr, S. (2015). ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering. Applied Mathematics and Computation, 267, 282–293. https://doi.org/10.1016/j.amc.2015.03.094 (reposiTUm)

528.		Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S. (2014). A Benchmark Study of the Wigner Monte Carlo Method. Monte Carlo Methods and Applications, 20(1). https://doi.org/10.1515/mcma-2013-0018 (reposiTUm)

527.		Ghobadi, N., Pourfath, M. (2014). A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures. IEEE Transactions on Electron Devices, 61(1), 186–192. https://doi.org/10.1109/ted.2013.2291788 (reposiTUm)

526.		Djavid, N., Khaliji, K., Tabatabaei, S. M., Pourfath, M. (2014). A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons. IEEE Transactions on Electron Devices, 61(1), 23–29. https://doi.org/10.1109/ted.2013.2290773 (reposiTUm)

525.		Weinbub, J., Hössinger, A. (2014). Accelerated Redistancing for Level Set-Based Process Simulations with the Fast Iterative Method. Journal of Computational Electronics, 13(4), 877–884. https://doi.org/10.1007/s10825-014-0604-x (reposiTUm)

524.		Rupp, K., Tillet, P., Jüngel, A., Grasser, T. (2014). Achieving Portable High Performance for Iterative Solvers on Accelerators. Proceedings in Applied Mathematics and Mechanics, 14(1), 963–964. (reposiTUm)

523.		Osintsev, D., Sverdlov, V., Selberherr, S. (2014). Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films. Advanced Materials Research, 854, 29–34. https://doi.org/10.4028/www.scientific.net/amr.854.29 (reposiTUm)

522.		Illarionov, Y. Yu., Bina, M., Tyaginov, S. E., Grasser, T. (2014). An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs. Japanese Journal of Applied Physics, 53(4S), 04EC22. https://doi.org/10.7567/jjap.53.04ec22 (reposiTUm)

521.		Karamitaheri, H., Neophytou, N., Kosina, H. (2014). Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires. Journal of Applied Physics, 115(2), 024302. https://doi.org/10.1063/1.4858375 (reposiTUm)

520.		Gholipour, M., Masoumi, N., Chen, Y. C., Chen, D., Pourfath, M. (2014). Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design. IEEE Transactions on Electron Devices, 61(12), 4000–4006. https://doi.org/10.1109/ted.2014.2362774 (reposiTUm)

519.		Illarionov, Yu. Yu., Smith, A. D., Vaziri, S., Ostling, M., Mueller, T., Lemme, M. C., Grasser, T. (2014). Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors. Applied Physics Letters, 105(14), 143507. https://doi.org/10.1063/1.4897344 (reposiTUm)

518.		Camargo, V. V. A., Kaczer, B., Grasser, T., Wirth, G. (2014). Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics. Microelectronics Reliability, 54(11), 2364–2370. (reposiTUm)

517.		Reininger, P., Schwarz, B., Detz, H., MacFarland, D., Zederbauer, T., Andrews, A. M., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2014). Diagonal-Transition Quantum Cascade Detector. Applied Physics Letters, 105(9), 091108. https://doi.org/10.1063/1.4894767 (reposiTUm)

516.		Illarionov, Yu. Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Sokolov, N. S. (2014). Electrical and Optical Characterization of Au/CaF₂/p-Si(111) Tunnel-Injection Diodes. Journal of Applied Physics, 115(22), 223706. https://doi.org/10.1063/1.4882375 (reposiTUm)

515.		Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S. (2014). Electromigration Reliability of Open TSV Structures. Microelectronics Reliability, 54(9–10), 2133–2137. https://doi.org/10.1016/j.microrel.2014.07.099 (reposiTUm)

514.		Sellier, J. M., Amoroso, S. M., Nedjalkov, M., Selberherr, S., Asenov, A., Dimov, I. (2014). Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches. Physica A: Statistical Mechanics and Its Applications, 398, 194–198. https://doi.org/10.1016/j.physa.2013.12.045 (reposiTUm)

513.		Narducci, D., Lorenzi, B., Zianni, X., Neophytou, N., Frabboni, S., Gazzadi, G. C., Roncaglia, A., Suriano, F. (2014). Enhancement of the Power Factor in Two-Phase Silicon-Boron Nanocrystalline Alloys. Physica Status Solidi (a) – Applications and Materials Science, 211(6), 1255–1258. (reposiTUm)

512.		Neophytou, N., Kosina, H. (2014). Gated Si Nanowires for Large Thermoelectric Power Factors. Applied Physics Letters, 105(7), 073119. https://doi.org/10.1063/1.4893977 (reposiTUm)

511.		Asad, M., Fathipour, M., Sheikhi, M. H., Pourfath, M. (2014). High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles. Sensors and Actuators A: Physical, 220, 213–220. https://doi.org/10.1016/j.sna.2014.10.017 (reposiTUm)

510.		Weinbub, J., Rupp, K., Selberherr, S. (2014). Highly Flexible and Reusable Finite Element Simulations with ViennaX. Journal of Computational and Applied Mathematics, 270, 484–495. https://doi.org/10.1016/j.cam.2013.12.013 (reposiTUm)

509.		Tapajna, M., Killat, N., Palankovski, V., Gregusova, D., Cico, K., Carlin, J.-F., Grandjean, N., Kuball, M., Kuzmik, J. (2014). Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices, 61(8), 2793–2801. https://doi.org/10.1109/ted.2014.2332235 (reposiTUm)

508.		Pobegen, G., Aichinger, T., Salinaro, A., Grasser, T. (2014). Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs. Materials Science Forum, 778–780, 959–962. https://doi.org/10.4028/www.scientific.net/msf.778-780.959 (reposiTUm)

507.		Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F. (2014). Methods of simulating thin film deposition using spray pyrolysis techniques. Microelectronic Engineering, 117, 57–66. https://doi.org/10.1016/j.mee.2013.12.025 (reposiTUm)

506.		Ceric, H., Orio, R., Zisser, W., Selberherr, S. (2014). Microstructural Impact on Electromigration: A TCAD Study. Facta Universitatis - Series: Electronics and Energetics, 27(1), 1–11. https://doi.org/10.2298/fuee1401001c (reposiTUm)

505.		Rott, G. A., Rott, K., Reisinger, H., Gustin, W., Grasser, T. (2014). Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors. Microelectronics Reliability, 54(9–10), 2310–2314. https://doi.org/10.1016/j.microrel.2014.07.040 (reposiTUm)

504.		Tyaginov, S. E., Illarionov, Yu. Yu., Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., Grasser, T. (2014). Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric. Journal of Computational Electronics, 13(3), 733–738. https://doi.org/10.1007/s10825-014-0593-9 (reposiTUm)

503.		Tyaginov, S., Wimmer, Y., Grasser, T. (2014). Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment. Facta Universitatis - Series: Electronics and Energetics, 27(4), 479–508. https://doi.org/10.2298/fuee1404479t (reposiTUm)

502.		Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W. (2014). Modeling the Growth of Tin Dioxide Using Spray Pyrolysis Deposition for Gas Sensor Applications. IEEE Transactions on Semiconductor Manufacturing, 27(2), 269–277. https://doi.org/10.1109/tsm.2014.2298883 (reposiTUm)

501.		Amoroso, S. M., Gerrer, L., Nedjalkov, M., Hussin, R., Alexander, C., Asenov, A. (2014). Modelling Carriers Mobility in nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues. IEEE Transactions on Electron Devices, 61(5), 1292–1298. https://doi.org/10.1109/ted.2014.2312820 (reposiTUm)

500.		Wolf, S., Neophytou, N., Stanojevic, Z., Kosina, H. (2014). Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes. Journal of Electronic Materials, 43(10), 3870–3875. https://doi.org/10.1007/s11664-014-3324-x (reposiTUm)

499.		Grasser, T., Rott, K., Reisinger, H., Waltl, M., Schanovsky, F., Kaczer, B. (2014). NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark. IEEE Transactions on Electron Devices, 61(11), 3586–3593. https://doi.org/10.1109/ted.2014.2353578 (reposiTUm)

498.		Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014). Novel Bias-Field-Free Spin Transfer Oscillator. Journal of Applied Physics, 115(17), 17C901. https://doi.org/10.1063/1.4862936 (reposiTUm)

497.		Ghobadi, N., Pourfath, M. (2014). On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors. Journal of Applied Physics, 116(18), 184506. https://doi.org/10.1063/1.4901584 (reposiTUm)

496.		Mojibpour, A., Pourfath, M., Kosina, H. (2014). Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers. Optics Express, 22(17), 20607. https://doi.org/10.1364/oe.22.020607 (reposiTUm)

495.		Lorenzi, B., Narducci, D., Tonini, R., Frabboni, S., Gazzadi, G. C., Ottaviani, G., Neophytou, N., Zianni, X. (2014). Paradoxical Enhancement of the Power Factor of Polycrystalline Silicon as a Result of the Formation of Nanovoids. Journal of Electronic Materials, 43(10), 3812–3816. https://doi.org/10.1007/s11664-014-3170-x (reposiTUm)

494.		Bina, M., Tyaginov, S., Franco, J., Rupp, K., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014). Predictive Hot-Carrier Modeling of n-Channel MOSFETs. IEEE Transactions on Electron Devices, 61(9), 3103–3110. https://doi.org/10.1109/ted.2014.2340575 (reposiTUm)

493.		Makarov, A., Sverdlov, V., Selberherr, S. (2014). Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer. International Journal of High Speed Electronics and Systems, 23(03n04), 1450014. https://doi.org/10.1142/s0129156414500141 (reposiTUm)

492.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates. Advanced Materials Research, 854, 89–95. https://doi.org/10.4028/www.scientific.net/amr.854.89 (reposiTUm)

491.		Kuzmík, J., Ťapajna, M., Válik, L., Molnar, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., Würfl, J. (2014). Self-Heating in GaN Transistors Designed for High-Power Operation. IEEE Transactions on Electron Devices, 61(10), 3429–3434. https://doi.org/10.1109/ted.2014.2350516 (reposiTUm)

490.		Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., Palankovski, V. (2014). Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors. Applied Surface Science, 312, 157–161. https://doi.org/10.1016/j.apsusc.2014.04.078 (reposiTUm)

489.		Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). Spin Injection in a Semiconductor Through a Space-Charge Layer. Solid-State Electronics, 101, 116–121. https://doi.org/10.1016/j.sse.2014.06.035 (reposiTUm)

488.		Ghosh, J., Sverdlov, V., Windbacher, T., Selberherr, S. (2014). Spin injection and diffusion in silicon based devices from a space charge layer. Journal of Applied Physics, 115(17), 17C503. https://doi.org/10.1063/1.4856056 (reposiTUm)

487.		Kahnoj, S. S., Touski, S. B., Pourfath, M. (2014). The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons. Applied Physics Letters, 105(10), 103502. https://doi.org/10.1063/1.4894859 (reposiTUm)

486.		Filipovic, L., Selberherr, S. (2014). The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias. Microelectronics Reliability, 54(9–10), 1953–1958. https://doi.org/10.1016/j.microrel.2014.07.014 (reposiTUm)

485.		Rudolf, F., Weinbub, J., Rupp, K., Selberherr, S. (2014). The Meshing Framework ViennaMesh for Finite Element Applications. Journal of Computational and Applied Mathematics, 270, 166–177. https://doi.org/10.1016/j.cam.2014.02.005 (reposiTUm)

484.		Wolf, S., Neophytou, N., Kosina, H. (2014). Thermal Conductivity of Silicon Nanomeshes: Effects of Porosity and Roughness. Journal of Applied Physics, 115(20), 204306. https://doi.org/10.1063/1.4879242 (reposiTUm)

483.		Weinbub, J., Rupp, K., Selberherr, S. (2014). ViennaX: A Parallel Plugin Execution Framework for Scientific Computing. Engineering with Computers, 30(4), 651–668. https://doi.org/10.1007/s00366-013-0314-1 (reposiTUm)

482.		Mohammad Tabatabaei, S., Noei, M., Khaliji, K., Pourfath, M., Fathipour, M. (2013). A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor. Journal of Applied Physics, 113(16), 163708. https://doi.org/10.1063/1.4803032 (reposiTUm)

481.		Vexler, M. I., Tyaginov, S. E., Illarionov, Yu. Yu., Sing, Y. K., Shenp, A. D., Fedorov, V. V., Isakov, D. V. (2013). A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures. Semiconductors, 47(5), 686–694. https://doi.org/10.1134/s1063782613050230 (reposiTUm)

480.		Filipovic, L., Selberherr, S. (2013). A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework. Microelectronic Engineering, 107, 23–32. https://doi.org/10.1016/j.mee.2013.02.083 (reposiTUm)

479.		Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Seinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W. (2013). A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework. Engineering Letters, 21(4), 224–240. (reposiTUm)

478.		Starkov, A. S., Pakhomov, O. V., Starkov, I. A. (2013). Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling. Ferroelectrics, 442(1), 10–17. https://doi.org/10.1080/00150193.2013.773854 (reposiTUm)

477.		Pobegen, G., Nelhiebel, M., de Filippis, S., Grasser, T. (2013). Accurate High Temperature Measurements Using Local Polysilicon Heater Structures. IEEE Transactions on Device and Materials Reliability, 14(1), 169–176. https://doi.org/10.1109/tdmr.2013.2265015 (reposiTUm)

476.		Neophytou, N., Karamitaheri, H., Kosina, H. (2013). Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers. Journal of Computational Electronics, 12(4), 611–622. https://doi.org/10.1007/s10825-013-0522-3 (reposiTUm)

475.		Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2013). Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons. IEEE Transactions on Electron Devices, 60(7), 2142–2147. https://doi.org/10.1109/ted.2013.2262049 (reposiTUm)

474.		Karamitaheri, H., Neophytou, N., Kosina, H. (2013). Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation. Journal of Applied Physics, 113(20), 204305. https://doi.org/10.1063/1.4808100 (reposiTUm)

473.		Karamitaheri, H., Neophytou, N., Taheri, M. K., Faez, R., Kosina, H. (2013). Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method. Journal of Electronic Materials, 42(7), 2091–2097. https://doi.org/10.1007/s11664-013-2533-z (reposiTUm)

472.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2013). Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors. Sains Malaysiana, 42(2), 205–211. (reposiTUm)

471.		Schwaha, P., Querlioz, D., Dollfus, P., Saint-Martin, J., Nedjalkov, M., Selberherr, S. (2013). Decoherence Effects in the Wigner Function Formalism. Journal of Computational Electronics, 12(3), 388–396. https://doi.org/10.1007/s10825-013-0480-9 (reposiTUm)

470.		Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S. (2013). Decoherence and Time Reversibility: The Role of Randomness at Interfaces. Journal of Applied Physics, 114(17), 174902. https://doi.org/10.1063/1.4828736 (reposiTUm)

469.		Starkov, A., Starkov, I. (2013). Domain Wall Motion for Slowly Varying Electric Field. Ferroelectrics, 442(1), 1–9. https://doi.org/10.1080/00150193.2013.773852 (reposiTUm)

468.		Pobegen, G., Grasser, T. (2013). Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps. Materials Science Forum, 740–742, 757–760. https://doi.org/10.4028/www.scientific.net/msf.740-742.757 (reposiTUm)

467.		Kaczer, B., Toledano-Luque, M., Goes, W., Grasser, T., Groeseneken, G. (2013). Gate Current Random Telegraph Noise and Single Defect Conduction. Microelectronic Engineering, 109, 123–125. https://doi.org/10.1016/j.mee.2013.03.110 (reposiTUm)

466.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory. Solid-State Electronics, 84, 191–197. https://doi.org/10.1016/j.sse.2013.02.017 (reposiTUm)

465.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013). Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement. Journal of Superconductivity and Novel Magnetism, 26(5), 1745–1748. https://doi.org/10.1007/s10948-012-2034-y (reposiTUm)

464.		Illarionov, Yu. Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Sokolov, N. S. (2013). Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer. Thin Solid Films, 545, 580–583. https://doi.org/10.1016/j.tsf.2013.07.050 (reposiTUm)

463.		Starkov, I., Enichlmair, H. (2013). Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs. Journal of Vacuum Science, Technology B, 31(1), 01A118. https://doi.org/10.1116/1.4774106 (reposiTUm)

462.		Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Multiple Purpose Spin Transfer Torque Operated Devices. Facta Universitatis - Series: Electronics and Energetics, 26(3), 227–238. https://doi.org/10.2298/fuee1303227w (reposiTUm)

461.		Franco, J., Kaczer, B., Mitard, J., Toledano-Luque, M., Roussel, P. J., Witters, L., Grasser, T., Groeseneken, G. (2013). NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack. IEEE Transactions on Device and Materials Reliability, 13(4), 497–506. https://doi.org/10.1109/tdmr.2013.2281731 (reposiTUm)

460.		Pobegen, G., Tyaginov, S., Nelhiebel, M., Grasser, T. (2013). Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation. IEEE Electron Device Letters, 34(8), 939–941. https://doi.org/10.1109/led.2013.2262521 (reposiTUm)

459.		Pobegen, G., Grasser, T. (2013). On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale. IEEE Transactions on Electron Devices, 60(7), 2148–2155. https://doi.org/10.1109/ted.2013.2264816 (reposiTUm)

458.		Neophytou, N., Kosina, H. (2013). Optimizing Thermoelectric Power Factor by Means of a Potential Barrier. Journal of Applied Physics, 114(4), 044315. https://doi.org/10.1063/1.4816792 (reposiTUm)

457.		Nedjalkov, M., Selberherr, S., Ferry, D. K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I., Schwaha, P. (2013). Physical Scales in the Wigner-Boltzmann Equation. Annals of Physics, 328, 220–237. https://doi.org/10.1016/j.aop.2012.10.001 (reposiTUm)

456.		Neophytou, N., Zianni, X., Kosina, H., Frabboni, S., Lorenzi, B., Narducci, D. (2013). Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems. Journal of Electronic Materials, 43(6), 1896–1904. https://doi.org/10.1007/s11664-013-2898-z (reposiTUm)

455.		Demidov, D., Ahnert, K., Rupp, K., Gottschling, P. (2013). Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries. SIAM Journal on Scientific Computing, 35(5), C453–C472. https://doi.org/10.1137/120903683 (reposiTUm)

454.		Aichinger, T., Nelhiebel, M., Grasser, T. (2013). Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures. Microelectronics Reliability, 53(7), 937–946. https://doi.org/10.1016/j.microrel.2013.03.007 (reposiTUm)

453.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits. IEEE Transactions on Magnetics, 49(12), 5620–5628. https://doi.org/10.1109/tmag.2013.2278683 (reposiTUm)

452.		Jurkovic, M., Gregusova, D., Palankovski, V., Hascik, S., Blaho, M., Cico, K., Frohlich, K., Carlin, J., Grandjean, N., Kuzmik, J. (2013). Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region. IEEE Electron Device Letters, 34(3), 432–434. https://doi.org/10.1109/led.2013.2241388 (reposiTUm)

451.		Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P. J., Kauerauf, T., Mitard, J., Witters, L., Grasser, T., Groeseneken, G. (2013). SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues. IEEE Transactions on Electron Devices, 60(1), 405–412. https://doi.org/10.1109/ted.2012.2225624 (reposiTUm)

450.		Franco, J., Kaczer, B., Roussel, P. J., Mitard, J., Cho, M., Witters, L., Grasser, T., Groeseneken, G. (2013). SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI. IEEE Transactions on Electron Devices, 60(1), 396–404. https://doi.org/10.1109/ted.2012.2225625 (reposiTUm)

449.		Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate. Microelectronic Engineering, 112, 188–192. https://doi.org/10.1016/j.mee.2012.12.030 (reposiTUm)

448.		Neophytou, N., Zianni, X., Kosina, H., Frabboni, S., Lorenzi, B., Narducci, D. (2013). Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si. Nanotechnology, 24(20), 205402. https://doi.org/10.1088/0957-4484/24/20/205402 (reposiTUm)

447.		Singulani, A. P., Ceric, H., Selberherr, S. (2013). Stress Evolution in the Metal Layers of TSVs with Bosch Scallops. Microelectronics Reliability, 53(9–11), 1602–1605. https://doi.org/10.1016/j.microrel.2013.07.132 (reposiTUm)

446.		Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2013). Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs. Solid-State Electronics, 90, 34–38. https://doi.org/10.1016/j.sse.2013.02.055 (reposiTUm)

445.		Babaee Touski, S., Pourfath, M. (2013). Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons. Applied Physics Letters, 103(14), 143506. https://doi.org/10.1063/1.4824362 (reposiTUm)

444.		Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Cho, M., Kauerauf, T., Mitard, J., Eneman, G., Witters, L., Grasser, T., Groeseneken, G. (2013). Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs. Microelectronic Engineering, 109, 250–256. https://doi.org/10.1016/j.mee.2013.03.001 (reposiTUm)

443.		Starkov, A. S., Pakhomov, O. V., Starkov, I. A. (2013). Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them. Journal of Experimental and Theoretical Physics (JETP), 116(6), 987–994. https://doi.org/10.1134/s1063776113060149 (reposiTUm)

442.		Toledano-Luque, M., Kaczer, B., Grasser, T., Roussel, P. J., Franco, J., Groeseneken, G. (2013). Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions. Journal of Vacuum Science, Technology B, 31(1), 01A114. https://doi.org/10.1116/1.4772587 (reposiTUm)

441.		Kareva, G. G., Vexler, M. I., Illarionov, Yu. Yu. (2013). Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode. Microelectronic Engineering, 109, 270–273. https://doi.org/10.1016/j.mee.2013.03.063 (reposiTUm)

440.		Mennemann, J.-F., Jüngel, A., Kosina, H. (2013). Transient Schrödinger-Poisson Simulations of a High-Frequency Resonant Tunneling Diode Oscillator. Journal of Computational Physics, 239, 187–205. https://doi.org/10.1016/j.jcp.2012.12.009 (reposiTUm)

439.		Khaliji, K., Noei, M., Tabatabaei, S. M., Pourfath, M., Fathipour, M., Abdi, Y. (2013). Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain. IEEE Transactions on Electron Devices, 60(8), 2464–2470. https://doi.org/10.1109/ted.2013.2266300 (reposiTUm)

438.		Karamitaheri, H., Neophytou, N., Kosina, H. (2013). Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires. Journal of Electronic Materials, 43(6), 1829–1836. https://doi.org/10.1007/s11664-013-2884-5 (reposiTUm)

437.		Camargo, V. V. A., Kaczer, B., Wirth, G., Grasser, T., Groeseneken, G. (2013). Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 22(2), 280–285. https://doi.org/10.1109/tvlsi.2013.2240323 (reposiTUm)

436.		Baumgartner, O., Stanojevic, Z., Schnass, K., Karner, M., Kosina, H. (2013). VSP - A Quantum-Electronic Simulation Framework. Journal of Computational Electronics, 12(4), 701–721. https://doi.org/10.1007/s10825-013-0535-y (reposiTUm)

435.		Nedjalkov, M., Schwaha, P., Selberherr, S., Sellier, J. M., Vasileska, D. (2013). Wigner Quasi-Particle Attributes - An Asymptotic Perspective. Applied Physics Letters, 102(16), 163113. https://doi.org/10.1063/1.4802931 (reposiTUm)

434.		Noei, M., Moradinasab, M., Fathipour, M. (2012). A Computational Study of Ballistic Graphene Nanoribbon Field Effect Transistors. Physica E: Low-Dimensional Systems and Nanostructures, 44(7–8), 1780–1786. https://doi.org/10.1016/j.physe.2011.12.018 (reposiTUm)

433.		Schanovsky, F., Baumgartner, O., Sverdlov, V., Grasser, T. (2012). A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures. Journal of Computational Electronics, 11(3), 218–224. https://doi.org/10.1007/s10825-012-0403-1 (reposiTUm)

432.		Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2012). A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons. IEEE Transactions on Electron Devices, 59(2), 433–440. https://doi.org/10.1109/ted.2011.2173690 (reposiTUm)

431.		Schwarz, B., Reininger, P., Detz, H., Zederbauer, T., Maxwell Andrews, A., Kalchmair, S., Schrenk, W., Baumgartner, O., Kosina, H., Strasser, G. (2012). A bi-functional quantum cascade device for same-frequency lasing and detection. Applied Physics Letters, 101(19), 191109. https://doi.org/10.1063/1.4767128 (reposiTUm)

430.		Moradinasab, M., Nematian, H., Pourfath, M., Fathipour, M., Kosina, H. (2012). Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons. Journal of Applied Physics, 111(7), 074318. https://doi.org/10.1063/1.3702429 (reposiTUm)

429.		Vasicek, M., Cervenka, J., Esseni, D., Palestri, P., Grasser, T. (2012). Applicability of Macroscopic Transport Models to Decananometer MOSFETs. IEEE Transactions on Electron Devices, 59(3), 639–646. https://doi.org/10.1109/ted.2011.2181177 (reposiTUm)

428.		Franco, J., Graziano, S., Kaczer, B., Crupi, F., Ragnarsson, L.-Å., Grasser, T., Groeseneken, G. (2012). BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic. Microelectronics Reliability, 52(9–10), 1932–1935. https://doi.org/10.1016/j.microrel.2012.06.058 (reposiTUm)

427.		Neophytou, N., Kosina, H. (2012). Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors. IEEE Electron Device Letters, 33(5), 652–654. https://doi.org/10.1109/led.2012.2188879 (reposiTUm)

426.		Kuzmik, J., Vitanov, S., Dua, C., Carlin, J.-F., Ostermaier, C., Alexewicz, A., Strasser, G., Pogany, D., Gornik, E., Grandjean, N., Delage, S., Palankovski, V. (2012). Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors. Japanese Journal of Applied Physics, 51(5R), 054102. https://doi.org/10.1143/jjap.51.054102 (reposiTUm)

425.		Neophytou, N., Kosina, H. (2012). Confinement-Induced Carrier Mobility Increase in Nanowires by Quantization of Warped Bands. Solid-State Electronics, 70, 81–91. https://doi.org/10.1016/j.sse.2011.11.018 (reposiTUm)

424.		Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, Ph. J., Grasser, T., Groeseneken, G. (2012). Defect-Centric Perspective of Time-Dependent BTI Variability. Microelectronics Reliability, 52(9–10), 1883–1890. https://doi.org/10.1016/j.microrel.2012.06.120 (reposiTUm)

423.		Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H. (2012). Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness. IEEE Transactions on Electron Devices, 59(12), 3527–3532. https://doi.org/10.1109/ted.2012.2218817 (reposiTUm)

422.		de Orio, R. L., Ceric, H., Selberherr, S. (2012). Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via. Microelectronics Reliability, 52(9–10), 1981–1986. https://doi.org/10.1016/j.microrel.2012.07.021 (reposiTUm)

421.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Emerging Memory Technologies: Trends, Challenges, and Modeling Methods. Microelectronics Reliability, 52(4), 628–634. https://doi.org/10.1016/j.microrel.2011.10.020 (reposiTUm)

420.		Karamitaheri, H., Neophytou, N., Pourfath, M., Faez, R., Kosina, H. (2012). Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons. Journal of Applied Physics, 111(5), 054501. https://doi.org/10.1063/1.3688034 (reposiTUm)

419.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2012). Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling. IEEE Transactions on Magnetics, 48(4), 1289–1292. https://doi.org/10.1109/tmag.2011.2173565 (reposiTUm)

418.		Rupp, K. (2012). High-Level Manipulation of OpenCL-Based Subvectors and Submatrices. Procedia Computer Science, 9, 1857–1866. https://doi.org/10.1016/j.procs.2012.04.204 (reposiTUm)

417.		Ahmed, S., Holland, K. D., Paydavosi, N., Rogers, C. M. S., Alam, A. U., Neophytou, N., Kienle, D., Vaidyanathan, M. (2012). Impact of Effective Mass on the Scaling Behavior of the fₜ and fₘₐₓ of III-V High-Electron-Mobility Transistors. IEEE Transactions on Nanotechnology, 11(6), 1160–1173. https://doi.org/10.1109/tnano.2012.2217348 (reposiTUm)

416.		Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, Ph. J., Grasser, T., Asenov, A., Groeseneken, G. (2012). Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs. IEEE Electron Device Letters, 33(6), 779–781. (reposiTUm)

415.		Starkov, A., Pakhomov, O., Starkov, I. (2012). Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions. Ferroelectrics, 427(1), 78–83. https://doi.org/10.1080/00150193.2012.674413 (reposiTUm)

414.		Ceric, H., de Orio, R. L., Selberherr, S. (2012). Interconnect Reliability Dependence on Fast Diffusivity Paths. Microelectronics Reliability, 52(8), 1532–1538. https://doi.org/10.1016/j.microrel.2011.09.035 (reposiTUm)

413.		Neophytou, N., Kosina, H. (2012). Large Thermoelectric Power Factor in P-Type Si (110)/[110] Ultra-Thin-Layers Compared to Differently Oriented Channels. Journal of Applied Physics, 112(2), 024305. https://doi.org/10.1063/1.4737122 (reposiTUm)

412.		Ortmann, F., Roche, S., Greer, J. C., Huhs, G., Shulthess, T., Deutsch, T., Weinberger, P., Payne, M., Sellier, J. M., Sprekels, J., Weinbub, J., Rupp, K., Nedjalkov, M., Vasileska, D., Alfi nito, E., Reggiani, L., Guerra, D., Ferry, D. K., Saraniti, M., … Macucci, M. (2012). Multi-Scale Modelling for Devices and Circuits. E-Nano Newsletter, SPECIAL ISSUE APRIL 2012, 31. (reposiTUm)

411.		Rott, K., Reisinger, H., Aresu, S., Schlünder, C., Kölpin, K., Gustin, W., Grasser, T. (2012). New Insights on the PBTI Phenomena in SiON pMOSFETs. Microelectronics Reliability, 52(9–10), 1891–1894. https://doi.org/10.1016/j.microrel.2012.06.015 (reposiTUm)

410.		Neophytou, N., Kosina, H. (2012). Numerical Study of the Thermoelectric Power Factor in Ultra-Thin Si Nanowires. Journal of Computational Electronics, 11(1), 29–44. https://doi.org/10.1007/s10825-012-0383-1 (reposiTUm)

409.		Neophytou, N., Kosina, H. (2012). On the Interplay between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires. Journal of Electronic Materials, 41(6), 1305–1311. https://doi.org/10.1007/s11664-011-1891-7 (reposiTUm)

408.		Nematian, H., Moradinasab, M., Pourfath, M., Fathipour, M., Kosina, H. (2012). Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices. Journal of Applied Physics, 111(9), 093512. https://doi.org/10.1063/1.4710988 (reposiTUm)

407.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., Selberherr, S. (2012). Physics-Based Modeling of GaN HEMTs. IEEE Transactions on Electron Devices, 59(3), 685–693. https://doi.org/10.1109/ted.2011.2179118 (reposiTUm)

406.		Starkov, A., Pakhomov, O., Starkov, I. (2012). Solid-State Cooler: New Opportunities. Ferroelectrics, 430(1), 108–114. https://doi.org/10.1080/00150193.2012.677730 (reposiTUm)

405.		Grasser, T. (2012). Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities. Microelectronics Reliability, 52(1), 39–70. https://doi.org/10.1016/j.microrel.2011.09.002 (reposiTUm)

404.		Karamitaheri, H., Neophytou, N., Pourfath, M., Kosina, H. (2012). Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method. Journal of Computational Electronics, 11(1), 14–21. https://doi.org/10.1007/s10825-011-0380-9 (reposiTUm)

403.		Stanojević, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2012). Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement. Solid-State Electronics, 70, 73–80. https://doi.org/10.1016/j.sse.2011.11.022 (reposiTUm)

402.		Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., Selberherr, S. (2012). Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels. Solid-State Electronics, 71, 25–29. https://doi.org/10.1016/j.sse.2011.10.015 (reposiTUm)

401.		de Orio, R. L., Ceric, H., Selberherr, S. (2011). A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects. Microelectronics Reliability, 51(9–11), 1573–1577. https://doi.org/10.1016/j.microrel.2011.07.049 (reposiTUm)

400.		Heinzl, R., Schwaha, P. (2011). A Generic Topology Library. Science of Computer Programming, 76(4), 324–346. https://doi.org/10.1016/j.scico.2009.09.007 (reposiTUm)

399.		Starkov, I., Tyaginov, S., Enichlmair, H., Park, J. M., Ceric, H., Grasser, T. (2011). Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements. Solid State Phenomena, 178–179, 267–272. https://doi.org/10.4028/www.scientific.net/ssp.178-179.267 (reposiTUm)

398.		Tyaginov, S., Starkov, I., Enichlmair, H., Jungemann, Ch., Park, J. M., Seebacher, E., Orio, R., Ceric, H., Grasser, T. (2011). An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation. Microelectronics Reliability, 51(9–11), 1525–1529. https://doi.org/10.1016/j.microrel.2011.07.089 (reposiTUm)

397.		Goharrizi, A. Y., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2011). An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons. IEEE Transactions on Electron Devices, 58(11), 3725–3735. https://doi.org/10.1109/ted.2011.2163719 (reposiTUm)

396.		Neophytou, N., Kosina, H. (2011). Atomistic Simulations of Low-Field Mobility in Si Nanowires: Influence of Confinement and Orientation. Physical Review B, 84(085313). https://doi.org/10.1103/physrevb.84.085313 (reposiTUm)

395.		Goes, W., Schanovsky, F., Reisinger, H., Kaczer, B., Grasser, T. (2011). Bistable Defects as the Cause for NBTI and RTN. Solid State Phenomena, 178–179, 473–482. https://doi.org/10.4028/www.scientific.net/ssp.178-179.473 (reposiTUm)

394.		Toledano-Luque, M., Kaczer, B., Roussel, Ph. J., Franco, J., Ragnarsson, L. Å., Grasser, T., Groeseneken, G. (2011). Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress. Applied Physics Letters, 98(18), 183506. https://doi.org/10.1063/1.3586780 (reposiTUm)

393.		Neophytou, N., Kosina, H. (2011). Effects of Confinement and Orientation on the Thermoelectric Power Factor of Silicon Nanowires. Physical Review B, 83(245305). https://doi.org/10.1103/physrevb.83.245305 (reposiTUm)

392.		Ceric, H., Selberherr, S. (2011). Electromigration in Submicron Interconnect Features of Integrated Circuits. Materials Science and Engineering: R: Reports, 71(5–6), 53–86. https://doi.org/10.1016/j.mser.2010.09.001 (reposiTUm)

391.		Karamitaheri, H., Pourfath, M., Faez, R., Kosina, H. (2011). Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices. Journal of Applied Physics, 110(5), 054506. https://doi.org/10.1063/1.3629990 (reposiTUm)

390.		Karamitaheri, H., Pourfath, M., Pazoki, M., Faez, R., Kosina, H. (2011). Graphene-Based Antidots for Thermoelectric Applications. Journal of The Electrochemical Society, 158(12), K213. https://doi.org/10.1149/2.025112jes (reposiTUm)

389.		Lorenz, J., Bär, E., Clees, T., Jancke, R., Salzig, C., Selberherr, S. (2011). Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology. IEEE Transactions on Electron Devices, 58(8), 2218–2226. https://doi.org/10.1109/ted.2011.2150225 (reposiTUm)

388.		Lorenz, J., Bär, E., Clees, T., Evanschitzky, P., Jancke, R., Kampen, C., Paschen, U., Salzig, C., Selberherr, S. (2011). Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Results. IEEE Transactions on Electron Devices, 58(8), 2227–2234. https://doi.org/10.1109/ted.2011.2150226 (reposiTUm)

387.		Neophytou, N., Kosina, H. (2011). Hole Mobility Increase in Ultra-Narrow Si Channels under Strong (110) Surface Confinement. Applied Physics Letters, 99(9), 092110. https://doi.org/10.1063/1.3631680 (reposiTUm)

386.		Starkov, I., Tyaginov, S., Enichlmair, H., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Ceric, H., Grasser, T. (2011). Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment. Journal of Vacuum Science, Technology B, 29(1), 01AB09. https://doi.org/10.1116/1.3534021 (reposiTUm)

385.		Pobegen, G., Aichinger, T., Grasser, T., Nelhiebel, M. (2011). Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs. Microelectronics Reliability, 51(9–11), 1530–1534. https://doi.org/10.1016/j.microrel.2011.06.024 (reposiTUm)

384.		Rabiee Golgir, H., Faez, R., Pazoki, M., Karamitaheri, H., Sarvari, R. (2011). Investigation of Quantum Conductance in Semiconductor Single-Wall Carbon Nanotubes: Effect of Strain and Impurity. Journal of Applied Physics, 110(6), 064320. https://doi.org/10.1063/1.3641981 (reposiTUm)

383.		Schanovsky, F., Gös, W., Grasser, T. (2011). Multiphonon Hole Trapping from First Principles. Journal of Vacuum Science, Technology B, 29(1), 01A201. https://doi.org/10.1116/1.3533269 (reposiTUm)

382.		García-Barrientos, A., Palankovski, V. (2011). Numerical Simulations of Amplification of Space Charge Waves in n-InP Films. Materials Science and Engineering: B, 176(17), 1368–1372. https://doi.org/10.1016/j.mseb.2011.02.014 (reposiTUm)

381.		Garcia-Barrientos, A., Palankovski, V. (2011). Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity. Applied Physics Letters, 98(7), 072110. https://doi.org/10.1063/1.3555467 (reposiTUm)

380.		Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Hehenberger, P. P., Grasser, T., Mitard, J., Eneman, G., Witters, L., Hoffmann, T. Y., Groeseneken, G. (2011). On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs. Microelectronic Engineering, 88(7), 1388–1391. https://doi.org/10.1016/j.mee.2011.03.065 (reposiTUm)

379.		Starkov, A. S., Pakhomov, O. V., Starkov, I. A. (2011). Parametric Enhancement of Electrocaloric Effect by Periodically Varying External Field. Technical Physics Letters, 37(12), 1139–1141. https://doi.org/10.1134/s1063785011120133 (reposiTUm)

378.		Manavizadeh, N., Raissi, F., Soleimani, E. A., Pourfath, M., Selberherr, S. (2011). Performance Assessment of Nanoscale Field Effect Diodes. IEEE Transactions on Electron Devices, 58(8), 2378–2384. https://doi.org/10.1109/ted.2011.2152844 (reposiTUm)

377.		Baumgartner, O., Sverdlov, V., Windbacher, T., Selberherr, S. (2011). Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films. IEEE Transactions on Nanotechnology, 10(4), 737–743. https://doi.org/10.1109/tnano.2010.2074211 (reposiTUm)

376.		Kaczer, B., Grasser, T., Franco, J., Toledano-Luque, M., Roussel, Ph. J., Cho, M., Simoen, E., Groeseneken, G. (2011). Recent Trends in Bias Temperature Instability. Journal of Vacuum Science, Technology B, 29, 01AB01-1-01AB01-7. (reposiTUm)

375.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer. Physica Status Solidi (RRL) - Rapid Research Letters, 5(12), 420–422. (reposiTUm)

374.		Makarov, A., Sverdlov, V., Selberherr, S. (2011). Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations. Journal of Vacuum Science, Technology B, 29(1), 01AD03. https://doi.org/10.1116/1.3521503 (reposiTUm)

373.		Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Montalenti, F., Miglio, L. (2011). Strained MOSFETs on Ordered SiGe Dots. Solid-State Electronics, 65–66, 81–87. https://doi.org/10.1016/j.sse.2011.06.041 (reposiTUm)

372.		Neophytou, N., Klimeck, G., Kosina, H. (2011). Subband Engineering for P-Type Silicon Ultra-Thin Layers for Increased Carrier Velocities. Journal of Applied Physics, 109(5), 053721. https://doi.org/10.1063/1.3556435 (reposiTUm)

371.		Toledano-Luque, M., Kaczer, B., Roussel, Ph., Cho, M. J., Grasser, T., Groeseneken, G. (2011). Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress. Journal of Vacuum Science, Technology B, 29(1), 01AA04. https://doi.org/10.1116/1.3532947 (reposiTUm)

370.		Dedyk, A., Pavlova, Y., Karmanenko, S., Semenov, A., Semikin, D., Pakhomov, O., Starkov, A., Starkov, I. (2011). Temperature Hysteresis of the Capacitance Dependence C(T) for Ferroelectric Ceramics. Journal of Vacuum Science, Technology B, 29(1), 01A501. https://doi.org/10.1116/1.3532944 (reposiTUm)

369.		Toledano-Luque, M., Kaczer, B., Simoen, E., Roussel, Ph. J., Veloso, A., Grasser, T., Groeseneken, G. (2011). Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics. Microelectronic Engineering, 88(7), 1243–1246. https://doi.org/10.1016/j.mee.2011.03.097 (reposiTUm)

368.		Rupp, K., Selberherr, S. (2011). The Economic Limit to Moore’s Law. IEEE Transactions on Semiconductor Manufacturing, 24(1), 1–4. https://doi.org/10.1109/tsm.2010.2089811 (reposiTUm)

367.		Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M. (2011). The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps. IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 (reposiTUm)

366.		Neophytou, N., Kosina, H. (2011). Thermoelectric Properties of Ultra Scaled Silicon Nanowires Using the sp3d5s-SO Atomistic Tight-Binding Model and Boltzmann Transport. Journal of Electronic Materials*, 40(5), 753–758. https://doi.org/10.1007/s11664-011-1542-z (reposiTUm)

365.		Milovanovic, G., Kosina, H. (2010). A Semiclassical Transport Model for Quantum Cascade Lasers based on the Pauli Master Equation. Journal of Computational Electronics, 9(3–4), 211–217. https://doi.org/10.1007/s10825-010-0325-8 (reposiTUm)

364.		Schanovsky, F., Gös, W., Grasser, T. (2010). An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT. Journal of Computational Electronics, 9(3–4), 135–140. https://doi.org/10.1007/s10825-010-0323-x (reposiTUm)

363.		Neophytou, N., Wagner, M., Kosina, H., Selberherr, S. (2010). Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model. Journal of Electronic Materials, 39(9), 1902–1908. https://doi.org/10.1007/s11664-009-1035-5 (reposiTUm)

362.		Lugstein, A., Steinmair, M., Steiger, A., Kosina, H., Bertagnolli, E. (2010). Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires. Nano Letters, 10(8), 3204–3208. https://doi.org/10.1021/nl102179c (reposiTUm)

361.		Huang, R., Taylor, A., Himmelsbach, S., Ceric, H., Detzel, T. (2010). Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing. Measurement Science and Technology, 21(5), 55702–55710. (reposiTUm)

360.		Nedjalkov, M., Kosina, H., Schwaha, P. (2010). Device Modeling in the Wigner Picture. Journal of Computational Electronics, 9(3–4), 218–223. https://doi.org/10.1007/s10825-010-0316-9 (reposiTUm)

359.		Starkov, A. S., Pakhomov, O. V., Starkov, I. (2010). Effect of Thermal Phenomena on a Second-Order Phase Transition in the Landau-Ginzburg Model. JETP Letters, 91(10), 507–511. (reposiTUm)

358.		Maroldt, S., Wiegner, D., Vitanov, S., Palankovski, V., Quay, R., Ambacher, O. (2010). Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. IEICE Transactions on Electronics, E93-C(8), 1238–1244. (reposiTUm)

357.		Tyaginov, S. E., Vexler, M. I., El Hdiy, A., Gacem, K., Zaporojtchenko, V. (2010). Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures. Materials Science in Semiconductor Processing, 13(5–6), 405–410. https://doi.org/10.1016/j.mssp.2011.07.003 (reposiTUm)

356.		Windbacher, T., Sverdlov, V., Baumgartner, O., Selberherr, S. (2010). Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting. Solid-State Electronics, 54(2), 137–142. https://doi.org/10.1016/j.sse.2009.12.008 (reposiTUm)

355.		Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2010). Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation. Solid-State Electronics, 54(2), 143–148. https://doi.org/10.1016/j.sse.2009.12.010 (reposiTUm)

354.		Aichinger, T., Nelhiebel, M., Grasser, T. (2010). Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen. Applied Physics Letters, 96, 133511-1-133511–133513. (reposiTUm)

353.		Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010). High-Temperature Modeling of AlGaN/GaN HEMTs. Solid-State Electronics, 54(10), 1105–1112. https://doi.org/10.1016/j.sse.2010.05.026 (reposiTUm)

352.		Aichinger, T., Nelhiebel, M., Einspieler, S., Grasser, T. (2010). In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip. IEEE Transactions on Device and Materials Reliability, 10(1), 3–8. (reposiTUm)

351.		Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010). Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling. Microelectronics Reliability, 50, 1267–1272. (reposiTUm)

350.		Neophytou, N., Kosina, H. (2010). Large Enhancement in Hole Velocity and Mobility in p-type [110] and [111] Silicon Nanowires by Cross Section Scaling: An Atomistic Analysis. Nano Letters, 10(12), 4913–4919. https://doi.org/10.1021/nl102875k (reposiTUm)

349.		Rupp, K., Jüngel, A., Grasser, T. (2010). Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors. Journal of Computational Physics, 229, 8750–8765. (reposiTUm)

348.		Ryan, J. T., Lenahan, P. M., Grasser, T., Enichlmair, H. (2010). Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance. Applied Physics Letters, 96(22), 223509. https://doi.org/10.1063/1.3428783 (reposiTUm)

347.		Aichinger, T., Nelhiebel, M., Einspieler, S., Grasser, T. (2010). Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress. Journal of Applied Physics, 107, 024508-1-024508–8. (reposiTUm)

346.		Neophytou, N., Kim, S. G., Klimeck, G., Kosina, H. (2010). On the Bandstructure Velocity and Ballistic Current of Ultra-Narrow Silicon Nanowire Transistors as a Function of Cross Section Size, Orientation, and Bias. Journal of Applied Physics, 107(11), 113701. https://doi.org/10.1063/1.3372764 (reposiTUm)

345.		Selberherr, S. (2010). Physically based Models of Electromigration: From Black’s Equation to Modern TCAD Models. Microelectronics Reliability, 50(6), 775–789. https://doi.org/10.1016/j.microrel.2010.01.007 (reposiTUm)

344.		Kaczer, B., Roussel, P. J., Grasser, T., Groeseneken, G. (2010). Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI. IEEE Electron Device Letters, 31(5), 411–413. https://doi.org/10.1109/led.2010.2044014 (reposiTUm)

343.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique. Journal of Computational Electronics, 9(3–4), 146–152. https://doi.org/10.1007/s10825-010-0317-8 (reposiTUm)

342.		Huang, R., Robl, W., Ceric, H., Detzel, T., Dehm, G. (2010). Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing. IEEE Transactions on Device and Materials Reliability, 10(1), 47–54. https://doi.org/10.1109/tdmr.2009.2032768 (reposiTUm)

341.		Rupp, K., Selberherr, S. (2010). The Economic Limit to Moore’s Law [Point of View]. Proceedings of the IEEE, 98(3), 351–353. https://doi.org/10.1109/jproc.2010.2040205 (reposiTUm)

340.		Ertl, O., Selberherr, S. (2010). Three-Dimensional Level Set Based Bosch Process Simulations using Ray Tracing for Flux Calculation. Microelectronic Engineering, 87(1), 20–29. https://doi.org/10.1016/j.mee.2009.05.011 (reposiTUm)

339.		Grasser, T., Reisinger, H., Wagner, P.-J., Kaczer, B. (2010). Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors. Physical Review B, 82(245318). https://doi.org/10.1103/physrevb.82.245318 (reposiTUm)

338.		Aichinger, T., Nelhiebel, M., Grasser, T. (2009). A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI. IEEE Transactions on Electron Devices, 56(12), 3018–3026. (reposiTUm)

337.		Ceric, H., de Orio, R. L., Cervenka, J., Selberherr, S. (2009). A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects. IEEE Transactions on Device and Materials Reliability, 9(1), 9–19. https://doi.org/10.1109/tdmr.2008.2000893 (reposiTUm)

336.		Ertl, O., Selberherr, S. (2009). A Fast Level Set Framework for Large Three-Dimensional Topography Simulations. Computer Physics Communications, 180(8), 1242–1250. https://doi.org/10.1016/j.cpc.2009.02.002 (reposiTUm)

335.		Reisinger, H., Vollertsen, R. P., Wagner, P.-J., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C. (2009). A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides. IEEE Transactions on Device and Materials Reliability, 9(2), 106–114. https://doi.org/10.1109/tdmr.2009.2021389 (reposiTUm)

334.		De Orio, R. L., Ceric, H., Selberherr, S. (2009). Analysis of Electromigration in Dual-Damascene Interconnect Structures. Journal of Integrated Circuits and Systems, 4(2), 67–72. https://doi.org/10.29292/jics.v4i2.300 (reposiTUm)

333.		Poschalko, C., Selberherr, S. (2009). Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads. IEEE Transactions on Electromagnetic Compatibility, 51(1), 18–24. https://doi.org/10.1109/temc.2008.2008815 (reposiTUm)

332.		Pourfath, M., Kosina, H. (2009). Computational Study of Carbon-Based Electronics. Journal of Computational Electronics, 8(3–4), 427–440. https://doi.org/10.1007/s10825-009-0285-z (reposiTUm)

331.		Tyaginov, S. E., Vexler, M. I., Sokolov, N. S., Suturin, S. M., Banshchikov, A. G., Grasser, T., Meinerzhagen, B. (2009). Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films. Journal of Physics D: Applied Physics, 42(11), 115307. https://doi.org/10.1088/0022-3727/42/11/115307 (reposiTUm)

330.		Vexler, M. I., Sokolov, N. S., Suturin, S. M., Banshchikov, A. G., Tyaginov, S. E., Grasser, T. (2009). Electrical Characterization and Modeling of the Au/CaF₂/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer. Journal of Applied Physics, 105(8), 083716. https://doi.org/10.1063/1.3110066 (reposiTUm)

329.		Grasser, T., Kaczer, B. (2009). Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs. IEEE Transactions on Electron Devices, 56(5), 1056–1062. https://doi.org/10.1109/ted.2009.2015160 (reposiTUm)

328.		Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2009). GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment. International Journal of Parallel, Emergent and Distributed Systems, 24(6), 505–520. https://doi.org/10.1080/17445760902758545 (reposiTUm)

327.		Tyaginov, S., Sverdlov, V., Starkov, I., Gös, W., Grasser, T. (2009). Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate. Microelectronics Reliability, 49(9–11), 998–1002. https://doi.org/10.1016/j.microrel.2009.06.018 (reposiTUm)

326.		Kaczer, B., Veloso, A., Roussel, Ph. J., Grasser, T., Groeseneken, G. (2009). Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks. Journal of Vacuum Science, Technology B, 27(1), 459–462. (reposiTUm)

325.		Sverdlov, V. A., Windbacher, T., Schanovsky, F., Selberherr, S. (2009). Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress. Journal of Integrated Circuits and Systems, 4(2), 55–60. https://doi.org/10.29292/jics.v4i2.298 (reposiTUm)

324.		Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009). Modeling of Modern MOSFETs with Strain. Journal of Computational Electronics, 8(3–4), 192–208. https://doi.org/10.1007/s10825-009-0291-1 (reposiTUm)

323.		Garcia-Barrientos, A., Grimalsky, V., Gutierrez-Dominguez, E. A., Palankovski, V. (2009). Nonstationary Effects of the Space Charge in Semiconductor Structures. Journal of Applied Physics, 105(7), 074501. https://doi.org/10.1063/1.3093689 (reposiTUm)

322.		Milovanovic, G., Baumgartner, O., Kosina, H. (2009). On Open Boundary Conditions for Quantum Cascade Structures. Optical and Quantum Electronics, 41(11–13), 921–932. https://doi.org/10.1007/s11082-010-9406-y (reposiTUm)

321.		Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T. (2009). On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress. Microelectronics Reliability, 49(9–11), 1013–1017. https://doi.org/10.1016/j.microrel.2009.06.040 (reposiTUm)

320.		Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2009). Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications. International Journal of Parallel, Emergent and Distributed Systems, 24(6), 539–549. https://doi.org/10.1080/17445760902758552 (reposiTUm)

319.		Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P. P., Nelhiebel, M. (2009). Understanding Negative Bias Temperature Instability in the Context of Hole Trapping. Microelectronic Engineering, 86(7–9), 1876–1882. (reposiTUm)

318.		Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T. (2008). A 2D Non-Parabolic Six-Moments Model. Solid-State Electronics, 52(10), 1606–1609. https://doi.org/10.1016/j.sse.2008.06.010 (reposiTUm)

317.		Grasser, T., Wagner, P.-Jü., Hehenberger, P., Goes, W., Kaczer, B. (2008). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. IEEE Transactions on Device and Materials Reliability, 8(3), 526–535. https://doi.org/10.1109/tdmr.2008.2002353 (reposiTUm)

316.		Martens, K., Kaczer, B., Grasser, T., De Jaeger, B., Meuris, M., Maes, H. E., Groeseneken, G. (2008). Applicability of Charge Pumping on Germanium MOSFETs. IEEE Electron Device Letters, 29(12), 1364–1366. https://doi.org/10.1109/led.2008.2007582 (reposiTUm)

315.		Goes, W., Karner, M., Sverdlov, V., Grasser, T. (2008). Charging and Discharging of Oxide Defects in Reliability Issues. IEEE Transactions on Device and Materials Reliability, 8(3), 491–500. https://doi.org/10.1109/tdmr.2008.2005247 (reposiTUm)

314.		Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2008). Current Transport Models for Nanoscale Semiconductor Devices. Materials Science and Engineering: R: Reports, 58(6), 228–270. https://doi.org/10.1016/j.mser.2007.11.001 (reposiTUm)

313.		Grasser, T., Gös, W., Kaczer, B. (2008). Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models. IEEE Transactions on Device and Materials Reliability, 8(1), 79–97. https://doi.org/10.1109/tdmr.2007.912779 (reposiTUm)

312.		Karlowatz, G., Wessner, W., Kosina, H. (2008). Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation. Mathematics and Computers in Simulation, 79(4), 972–979. https://doi.org/10.1016/j.matcom.2008.02.021 (reposiTUm)

311.		R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Journal of Computational Electronics, 7 (2008), 3; S. 128 - 131. Zusätzliche Informationen

310.		Sverdlov, V., Kosina, H., Selberherr, S. (2008). Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory. Journal of Computational Electronics, 7(3), 164–167. https://doi.org/10.1007/s10825-008-0177-7 (reposiTUm)

309.		Sverdlov, V., Selberherr, S. (2008). Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond. Solid-State Electronics, 52(12), 1861–1866. https://doi.org/10.1016/j.sse.2008.06.054 (reposiTUm)

308.		Pourfath, M., Kosina, H. (2008). Formalism Application of the Non-Equilibrium Green’s Function for the Numerical Analysis of Carbon Nanotube Fets. Journal of Computational and Theoretical Nanoscience, 5(6), 1128–1137. https://doi.org/10.1166/jctn.2008.011 (reposiTUm)

307.		Lenahan, P. M., Knowlton, B., Conley, J. F., Tonti, B., Suehle, J., Grasser, T. (2008). Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop. IEEE Transactions on Device and Materials Reliability, 8(3), 490. (reposiTUm)

306.		Raleva, K., Vasileska, D., Goodnick, S. M., Nedjalkov, M. (2008). Modeling Thermal Effects in Nanodevices. IEEE Transactions on Electron Devices, 55(6), 1306–1316. (reposiTUm)

305.		Vainshtein, S., Yuferev, V., Palankovski, V., Ong, D.-S., Kostamovaara, J. (2008). Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison between an Experiment and Simulations. Applied Physics Letters, 92(6), 062114. https://doi.org/10.1063/1.2870096 (reposiTUm)

304.		Vitanov, S., Palankovski, V. (2008). Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study. Solid-State Electronics, 52(11), 1791–1795. https://doi.org/10.1016/j.sse.2008.07.011 (reposiTUm)

303.		Pourfath, M., Kosina, H., Selberherr, S. (2008). Numerical Study of Quantum Transport in Carbon Nanotube Transistors. Mathematics and Computers in Simulation, 79(4), 1051–1059. https://doi.org/10.1016/j.matcom.2007.09.004 (reposiTUm)

302.		Aichinger, T., Nelhiebel, M., Grasser, T. (2008). On the Temperature Dependence of NBTI Recovery. Microelectronics Reliability, 48(8–9), 1178–1184. https://doi.org/10.1016/j.microrel.2008.06.018 (reposiTUm)

301.		Vasicek, M., Cervenka, J., Wagner, M., Karner, M., Grasser, T. (2008). Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs. Journal of Computational Electronics, 7(3), 168–171. https://doi.org/10.1007/s10825-008-0239-x (reposiTUm)

300.		Nedjalkov, M., Vasileska, D. (2008). Semi-Discrete 2D Wigner-Particle Approach. Journal of Computational Electronics, 7(3), 222–225. https://doi.org/10.1007/s10825-008-0197-3 (reposiTUm)

299.		Pourfath, M., Kosina, H., Selberherr, S. (2008). The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance. Journal of Physics: Conference Series, 109, 012029. https://doi.org/10.1088/1742-6596/109/1/012029 (reposiTUm)

298.		Ungersboeck, E., Gös, W., Dhar, S., Kosina, H., Selberherr, S. (2008). The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon. Mathematics and Computers in Simulation, 79(4), 1071–1077. https://doi.org/10.1016/j.matcom.2007.10.004 (reposiTUm)

297.		Cervenka, J., Ceric, H., Selberherr, S. (2008). Three-Dimensional Simulation of Sacrificial Etching. Microsystem Technologies, 14(4–5), 665–671. https://doi.org/10.1007/s00542-007-0491-1 (reposiTUm)

296.		Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2008). Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility. Solid-State Electronics, 52(10), 1563–1568. https://doi.org/10.1016/j.sse.2008.06.019 (reposiTUm)

295.		Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S. (2007). A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications. Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 (reposiTUm)

294.		Wittmann, R., Selberherr, S. (2007). A Study of Ion Implantation into Crystalline Germanium. Solid-State Electronics, 51(6), 982–988. https://doi.org/10.1016/j.sse.2007.03.019 (reposiTUm)

293.		Movahhedi, M., Abdipour, A., Nentchev, A., Dehghan, M., Selberherr, S. (2007). Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method. IEEE Transactions on Microwave Theory and Techniques, 55(6), 1322–1331. https://doi.org/10.1109/tmtt.2007.897777 (reposiTUm)

292.		Li, L., Meller, G., Kosina, H. (2007). Analytical Conductivity Model for Doped Organic Semiconductors. Journal of Applied Physics, 101(3), 033716. https://doi.org/10.1063/1.2472282 (reposiTUm)

291.		Li, L., Meller, G., Kosina, H. (2007). Carrier Concentration Dependence of the Mobility in Organic Semiconductors. Synthetic Metals, 157(4–5), 243–246. https://doi.org/10.1016/j.synthmet.2007.03.002 (reposiTUm)

290.		Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T., Selberherr, S. (2007). Comparison of Deposition Models for a TEOS LPCVD Process. Microelectronics Reliability, 47(4–5), 623–625. https://doi.org/10.1016/j.microrel.2007.01.058 (reposiTUm)

289.		Palestri, P., Barin, N., Brunel, D., Busseret, C., Campera, A., Childs, P., Driussi, F., Fiegna, C., Fiori, G., Gusmeroli, R., Iannaccone, G., Karner, M., Kosina, H., Lacaita, A. L., Langer, E., Majkusiak, B., Monzio Compagnoni, C., Poncet, A., Sangiorgi, E., … Walczak, J. (2007). Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks. IEEE Transactions on Electron Devices, 54(1), 106–114. https://doi.org/10.1109/ted.2006.887226 (reposiTUm)

288.		Li, L., Meller, G., Kosina, H. (2007). Diffusion-Controlled Charge Injection Model for Organic Light-Emitting Diodes. Applied Physics Letters, 91(17), 172111. https://doi.org/10.1063/1.2801702 (reposiTUm)

287.		Spevak, M., Grasser, T. (2007). Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26(8), 1408–1416. (reposiTUm)

286.		Pourfath, M., Kosina, H., Selberherr, S. (2007). Dissipative Transport in CNTFETs. Journal of Computational Electronics, 6(1–3), 321–324. https://doi.org/10.1007/s10825-006-0113-7 (reposiTUm)

285.		Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., Selberherr, S. (2007). Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass. IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533 (reposiTUm)

284.		Heitzinger, C., Ringhofer, C., Selberherr, S. (2007). Finite Difference Solutions of the Nonlinear Schrödinger Equation and their Conservation of Physical Quantities. Communications in Mathematical Sciences, 5(4), 779–788. https://doi.org/10.4310/cms.2007.v5.n4.a2 (reposiTUm)

283.		Pourfath, M., Kosina, H., Selberherr, S. (2007). Geometry Optimization for Carbon Nanotube Transistors. Solid-State Electronics, 51(11–12), 1565–1571. https://doi.org/10.1016/j.sse.2007.09.021 (reposiTUm)

282.		Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Pham, A.-T., Meinerzhagen, B., Wong, P., Nishi, Y., Saraswat, K. C. (2007). High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate p-MOSFETs. Microelectronic Engineering, 84(9–10), 2063–2066. https://doi.org/10.1016/j.mee.2007.04.085 (reposiTUm)

281.		Li, L., Meller, G., Kosina, H. (2007). Influence of Traps on Charge Transport in Organic Semiconductors. Solid-State Electronics, 51(3), 445–448. https://doi.org/10.1016/j.sse.2007.01.024 (reposiTUm)

280.		Span, G., Wagner, M., Grasser, T., Holmgren, L. (2007). Miniaturized TEG with Thermal Generation of Free Carriers. Physica Status Solidi (RRL) - Rapid Research Letters, 1(6), 241–243. https://doi.org/10.1002/pssr.200701171 (reposiTUm)

279.		Nedjalkov, M., Vasileska, D., Dimov, I., Arsov, G. (2007). Mixed Initial-Boundary Value Problem in Particle Modeling of Microelectronic Devices. Monte Carlo Methods and Applications, 13(4). https://doi.org/10.1515/mcma.2007.017 (reposiTUm)

278.		Grasser, T., Selberherr, S. (2007). Modeling of Negative Bias Temperature Instability. Journal of Telecommunications and Information Technology, 7(2), 92–102. (reposiTUm)

277.		KOSINA, H. (2007). Nanoelectronic Device Simulation Based on the Wigner Function Formalism. International Journal of High Speed Electronics and Systems, 17(03), 475–484. https://doi.org/10.1142/s0129156407004667 (reposiTUm)

276.		Entner, R., Grasser, T., Triebl, O., Enichlmair, H., Minixhofer, R. (2007). Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures. Microelectronics Reliability, 47(4–5), 697–699. (reposiTUm)

275.		Movahhedi, M., Abdipour, A., Ceric, H., Sheikholeslami, A., Selberherr, S. (2007). Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method. IEEE Microwave and Wireless Components Letters, 17(1), 10–12. https://doi.org/10.1109/lmwc.2006.887240 (reposiTUm)

274.		Ungersboeck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2007). Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon. Journal of Computational Electronics, 6(1–3), 55–58. https://doi.org/10.1007/s10825-006-0047-0 (reposiTUm)

273.		Sheikholeslami, A., Parhami, F., Puchner, H., Selberherr, S. (2007). Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers. Journal of Physics: Conference Series, 61, 1051–1055. https://doi.org/10.1088/1742-6596/61/1/208 (reposiTUm)

272.		Wagner, M., Karner, M., Cervenka, J., Vasicek, M., Kosina, H., Holzer, S., Grasser, T. (2007). Quantum Correction for DG MOSFETs. Journal of Computational Electronics, 5(4), 397–400. https://doi.org/10.1007/s10825-006-0032-7 (reposiTUm)

271.		Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S. (2007). The Effect of General Strain on the Band Structure and Electron Mobility of Silicon. IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 (reposiTUm)

270.		Pourfath, M., Kosina, H. (2007). The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors. Nanotechnology, 18(42), 424036. https://doi.org/10.1088/0957-4484/18/42/424036 (reposiTUm)

269.		Sverdlov, V., Ungersboeck, S. E., Kosina, H. (2007). Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain. IEEE Transactions on Nanotechnology, 6(3), 334–340. https://doi.org/10.1109/tnano.2007.894835 (reposiTUm)

268.		Wagner, M., Span, G., Holzer, S., Grasser, T. (2007). Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content. Semiconductor Science and Technology, 22, 173–176. (reposiTUm)

267.		Pourfath, M., Kosina, H., Selberherr, S. (2007). Tunneling CNTFETs. Journal of Computational Electronics, 6(1–3), 243–246. https://doi.org/10.1007/s10825-006-0099-1 (reposiTUm)

266.		Nedjalkov, M., Vasileska, D., Atanassov, E., Palankovski, V. (2007). Ultrafast Wigner Transport in Quantum Wires. Journal of Computational Electronics, 6(1–3), 235–238. https://doi.org/10.1007/s10825-006-0101-y (reposiTUm)

265.		Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Goes, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2007). VSP - A Gate Stack Analyzer. Microelectronics Reliability, 47(4–5), 704–708. https://doi.org/10.1016/j.microrel.2007.01.059 (reposiTUm)

264.		Triebl, O., Grasser, T. (2007). Vector Discretization Schemes in Technology CAD Environments. Romanian Journal of Information Science and Technology, 10(2), 167–176. (reposiTUm)

263.		Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2007). Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations. Solid-State Electronics, 51(2), 299–305. https://doi.org/10.1016/j.sse.2007.01.022 (reposiTUm)

262.		Pourfath, M., Kosina, H., Selberherr, S. (2006). A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors. Journal of Computational Electronics, 5(2–3), 155–159. https://doi.org/10.1007/s10825-006-8836-z (reposiTUm)

261.		Kinkhabwala, Y., Sverdlov, V., Likharev, K. (2006). A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport. Journal of Physics: Condensed Matter, 18, 2013–2027. (reposiTUm)

260.		Kinkhabwala, Y., Sverdlov, V., Korotkov, A. N., Likharev, K. (2006). A Numerical Study of Transport and Shot Noise in 2D Hopping. Journal of Physics: Condensed Matter, 18, 1999–2012. (reposiTUm)

259.		Wessner, W., Cervenka, J., Heitzinger, C., Hossinger, A., Selberherr, S. (2006). Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2129–2139. https://doi.org/10.1109/tcad.2005.862750 (reposiTUm)

258.		Kosina, H., Selberherr, S. (2006). Device Simulation Demands of Upcoming Microelectronic Devices. International Journal of High Speed Electronics and Systems, 16(01), 115–136. https://doi.org/10.1142/s0129156406003576 (reposiTUm)

257.		Karner, M., Gehring, A., Kosina, H. (2006). Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics. Journal of Computational Electronics, 5(2–3), 161–165. https://doi.org/10.1007/s10825-006-8837-y (reposiTUm)

256.		Cervenka, J., Wessner, W., Al-Ani, E., Grasser, T., Selberherr, S. (2006). Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2118–2128. https://doi.org/10.1109/tcad.2006.876514 (reposiTUm)

255.		Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., Selberherr, S. (2006). High-Field Electron Mobility Model for Strained-Silicon Devices. IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 (reposiTUm)

254.		Sverdlov, V., Kosina, H., Selberherr, S. (2006). Modeling Current Transport in Ultra-Scaled Field-Effect Transistors. Microelectronics Reliability, 47(1), 11–19. https://doi.org/10.1016/j.microrel.2006.03.009 (reposiTUm)

253.		Ungersboeck, E., Kosina, H. (2006). Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers. Journal of Computational Electronics, 5(2–3), 79–83. https://doi.org/10.1007/s10825-006-8823-4 (reposiTUm)

252.		Pourfath, M., Kosina, H., Selberherr, S. (2006). Rigorous Modeling of Carbon Nanotube Transistors. Journal of Physics: Conference Series, 38, 29–32. https://doi.org/10.1088/1742-6596/38/1/008 (reposiTUm)

251.		Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 (reposiTUm)

250.		Meller, G., Li, L., Holzer, S., Kosina, H. (2006). Simulation of Carrier Injection and Propagation in Molecularly Disordered Systems. Optical and Quantum Electronics, 38(12–14), 993–1004. https://doi.org/10.1007/s11082-006-9051-7 (reposiTUm)

249.		Li, L., Meller, G., Kosina, H. (2006). Temperature and Field-Dependence of Hopping Conduction in Organic Semiconductors. Microelectronics Journal, 38(1), 47–51. https://doi.org/10.1016/j.mejo.2006.09.022 (reposiTUm)

248.		Nedjalkov, M., Vasileska, D., Ferry, D. K., Jacoboni, C., Ringhofer, C., Dimov, I., Palankovski, V. (2006). Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires. Physical Review B, 74(035311). https://doi.org/10.1103/physrevb.74.035311 (reposiTUm)

247.		Kosina, H. (2006). Wigner function approach to nano device simulation. International Journal of Computational Science and Engineering, 2(3/4), 100. https://doi.org/10.1504/ijcse.2006.012762 (reposiTUm)

246.		Heitzinger, C., Sheikholeslami, A., Park, J. M., Selberherr, S. (2005). A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24(10), 1485–1491. https://doi.org/10.1109/tcad.2005.852297 (reposiTUm)

245.		Wagner, S., Grasser, T., Fischer, C., Selberherr, S. (2005). An Advanced Equation Assembly Module. Engineering with Computers, 21(2), 151–163. https://doi.org/10.1007/s00366-005-0319-5 (reposiTUm)

244.		Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., Selberherr, S. (2005). Electron Mobility Model for Strained-Si Devices. IEEE Transactions on Electron Devices, 52(4), 527–533. https://doi.org/10.1109/ted.2005.844788 (reposiTUm)

243.		Jungemann, C., Grasser, T., Neinhüs, B., Meinerzhagen, B. (2005). Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium. IEEE Transactions on Electron Devices, 52(11), 2404–2408. (reposiTUm)

242.		Gehring, A., Selberherr, S. (2005). Gate Current Modeling for MOSFETs. Journal of Computational and Theoretical Nanoscience, 2(4), 473–491. https://doi.org/10.1166/jctn.2005.002 (reposiTUm)

241.		Castro, L. C., John, D. L., Pulfrey, D. L., Pourfath, M., Gehring, A., Kosina, H. (2005). Method for predicting f/sub T/ for carbon nanotube FETs. IEEE Transactions on Nanotechnology, 4(6), 699–704. https://doi.org/10.1109/tnano.2005.858603 (reposiTUm)

240.		Ayalew, T., Grasser, T., Kosina, H., Selberherr, S. (2005). Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices. Materials Science Forum, 483–485, 845–848. https://doi.org/10.4028/www.scientific.net/msf.483-485.845 (reposiTUm)

239.		Grasser, T. (2005). Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation. Physica A: Statistical Mechanics and Its Applications, 349, 221–258. (reposiTUm)

238.		Grasser, T., Kosik, R., Jungemann, C., Kosina, H., Selberherr, S. (2005). Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data. Journal of Applied Physics, 97(9), 093710. https://doi.org/10.1063/1.1883311 (reposiTUm)

237.		Pourfath, M., Ungersboeck, E., Gehring, A., Kosina, H., Selberherr, S., PARK, W.-J., Cheong, B.-H. (2005). Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors. Journal of Computational Electronics, 4(1–2), 75–78. https://doi.org/10.1007/s10825-005-7111-z (reposiTUm)

236.		Ayalew, T., Kim, S. C., Grasser, T., Selberherr, S. (2005). Numerical Analysis of SiC Merged PiN Schottky Diodes. Materials Science Forum, 483–485, 949–952. https://doi.org/10.4028/www.scientific.net/msf.483-485.949 (reposiTUm)

235.		Kim, S. C., Bahng, W., Kim, N. K., Kim, E. D., Ayalew, T., Grasser, T., Selberherr, S. (2005). Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication. Materials Science Forum, 483–485, 793–796. https://doi.org/10.4028/www.scientific.net/msf.483-485.793 (reposiTUm)

234.		Pourfath, M., Ungersboeck, E., Gehring, A., Cheong, B. H., Park, W. J., Kosina, H., Selberherr, S. (2005). Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors. Microelectronic Engineering, 81(2–4), 428–433. https://doi.org/10.1016/j.mee.2005.03.043 (reposiTUm)

233.		Ungersboeck, E., Pourfath, M., Kosina, H., Gehring, A., Cheong, B.-H., Park, W.-J., Selberherr, S. (2005). Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors. IEEE Transactions on Nanotechnology, 4(5), 533–538. https://doi.org/10.1109/tnano.2005.851402 (reposiTUm)

232.		Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005). Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach. Solid-State Electronics, 49(9), 1510–1515. https://doi.org/10.1016/j.sse.2005.07.013 (reposiTUm)

231.		Pourfath, M., Gehring, A., Ungersboeck, E., Kosina, H., Selberherr, S., Cheong, B. H., Park, W. J. (2005). Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors. Journal of Applied Physics, 97(10), 106103. https://doi.org/10.1063/1.1897491 (reposiTUm)

230.		Gehring, A., Kosina, H. (2005). Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method. Journal of Computational Electronics, 4(1–2), 67–70. (reposiTUm)

229.		Grasser, T., Kosik, R., Jungemann, C., Meinerzhagen, B., Kosina, H., Selberherr, S. (2004). A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices. Journal of Computational Electronics, 3(3–4), 183–187. https://doi.org/10.1007/s10825-004-7041-1 (reposiTUm)

228.		C. Heitzinger, Ch. Ringhofer: "A Note on the Symplectic Integration of the Nonlinear Schrödinger Equation"; Journal of Computational Electronics, 3 (2004), 1; S. 33 - 44. Zusätzliche Informationen

227.		M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr: "A Quasi-Particle Model of the Electron-Wigner Potential Interaction"; Semiconductor Science and Technology, 19 (2004), 4; S. 226 - 228. Zusätzliche Informationen

226.		Nedjalkov, M., Ahmed, S., Vasileska, D. (2004). A Self-Consistent Event Biasing Scheme for Statistical Enhancement. Journal of Computational Electronics, 3(3–4), 305–309. (reposiTUm)

225.		T. Binder, C. Heitzinger, S. Selberherr: "A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23 (2004), 6; S. 814 - 822. Zusätzliche Informationen

224.		C. Heitzinger, A. Hössinger, S. Selberherr: "An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; Mathematics and Computers in Simulation, 66 (2004), 2-3; S. 219 - 230. Zusätzliche Informationen

223.		R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr: "Analysis of Split-Drain MAGFETs"; IEEE Transactions on Electron Devices, 51 (2004), 12; S. 2237 - 2245. Zusätzliche Informationen

222.		V. Palankovski, S. Selberherr: "Critical Modeling Issues of SiGe Semiconductor Devices"; Journal of Telecommunications and Information Technology (eingeladen), 4 (2004), 1; S. 15 - 25. Zusätzliche Informationen

221.		S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr: "Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"; Applied Surface Science, 224 (2004), 1-4; S. 365 - 369. Zusätzliche Informationen

220.		T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Microelectronics Reliability, 44 (2004), 9-11; S. 1473 - 1478. Zusätzliche Informationen

219.		Gehring, A., Selberherr, S. (2004). Evolution of Current Transport Models for Engineering Applications. Journal of Computational Electronics, 3(3–4), 149–155. https://doi.org/10.1007/s10825-004-7035-z (reposiTUm)

218.		S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures"; Microelectronics Journal, 35 (2004), 10; S. 805 - 810. Zusätzliche Informationen

217.		C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr: "Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process"; IEEE Transactions on Electron Devices, 51 (2004), 7; S. 1129 - 1134. Zusätzliche Informationen

216.		J.M. Park, R. Klima, S. Selberherr: "High-Voltage Lateral Trench Gate SOI-LDMOSFETs"; Microelectronics Journal, 35 (2004), 3; S. 299 - 304. Zusätzliche Informationen

215.		A. Gehring, S. Selberherr: "Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices"; IEEE Transactions on Device and Materials Reliability, 4 (2004), 3; S. 306 - 319. Zusätzliche Informationen

214.		S. Smirnov, H. Kosina: "Monte Carlo Modeling of the Electron Mobility in Strained Si_1-xGe_x Layers on Arbitrarily Oriented Si_1-yGe_y Substrates"; Solid-State Electronics (eingeladen), 48 (2004), S. 1325 - 1335. Zusätzliche Informationen

213.		J.M. Park, S. Wagner, T. Grasser, S. Selberherr: "New SOI Lateral Power Devices with Trench Oxide"; Solid-State Electronics, 48 (2004), 6; S. 1007 - 1015. Zusätzliche Informationen

212.		C. Heitzinger, S. Selberherr: "On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem"; Microelectronics Journal, 35 (2004), 2; S. 167 - 171. Zusätzliche Informationen

211.		M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr: "Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation"; Monte Carlo Methods and Applications, 10 (2004), 3-4; S. 461 - 468. Zusätzliche Informationen

210.		V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs"; Applied Surface Science, 224 (2004), 1-4; S. 361 - 364. Zusätzliche Informationen

209.		V. Palankovski, S. Selberherr: "Rigorous Modeling of High-Speed Semiconductor Devices"; Microelectronics Reliability (eingeladen), 44 (2004), 6; S. 889 - 897. Zusätzliche Informationen

208.		Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr: "Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule"; SIAM Journal on Applied Mathematics, 64 (2004), 6; S. 1933 - 1953. Zusätzliche Informationen

207.		H. Kosina, M Nedjalkov, S. Selberherr: "Solution of the Space-dependent Wigner Equation Using a Particle Model"; Monte Carlo Methods and Applications, 10 (2004), 3-4; S. 359 - 368. Zusätzliche Informationen

206.		A. Gehring, S. Selberherr: "Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown"; Microelectronics Reliability, 44 (2004), 9-11; S. 1879 - 1884. Zusätzliche Informationen

205.		V. Palankovski, S. Selberherr: "The State-of-the-Art in Simulation for Optimization of SiGe-HBTs"; Applied Surface Science, 224 (2004), 1-4; S. 312 - 319. Zusätzliche Informationen

204.		M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry: "Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices"; Physical Review B, 70 (2004), 115319; S. 1 - 16. Zusätzliche Informationen

203.		H. Kosina, M. Nedjalkov, S. Selberherr: "A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations"; Journal of Computational Electronics, 2 (2003), 2-4; S. 147 - 151. Zusätzliche Informationen

202.		J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "A Numerical Study of Partial-SOI LDMOSFETs"; Solid-State Electronics, 47 (2003), 2; S. 275 - 281. Zusätzliche Informationen

201.		T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr: "A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation"; Proceedings of the IEEE, 91 (2003), 2; S. 251 - 274. Zusätzliche Informationen

200.		H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; IEICE Transactions on Electronics (eingeladen), E86-C (2003), 3; S. 421 - 426.

199.		H. Kosina, M. Nedjalkov, S. Selberherr: "An Event Bias Technique for Monte Carlo Device Simulation"; Mathematics and Computers in Simulation, 62 (2003), 3-6; S. 367 - 375. Zusätzliche Informationen

198.		A. Gehring, H. Kosina, S. Selberherr: "Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method"; Journal of Computational Electronics, 2 (2003), 2-4; S. 219 - 223. Zusätzliche Informationen

197.		Harlander, C., Sabelka, R., Selberherr, S. (2003). Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method. Microelectronics Journal, 34(9), 815–821. https://doi.org/10.1016/s0026-2692(03)00147-2 (reposiTUm)

196.		A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution"; Electronics Letters, 39 (2003), 8; S. 691 - 692. Zusätzliche Informationen

195.		T. Grasser, H. Kosina, S. Selberherr: "Hot Carrier Effects within Macroscopic Transport Models"; International Journal of High Speed Electronics and Systems, 13 (2003), 3; S. 873 - 901. Zusätzliche Informationen

194.		T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Microelectronics Reliability, 43 (2003), 9-11; S. 1889 - 1894. Zusätzliche Informationen

193.		S. Smirnov, H. Kosina, S. Selberherr: "Investigation of the Electron Mobility in Strained Si_1-x Ge_x at High Ge Composition"; IEICE Transactions on Electronics, E86-C (2003), 3; S. 350 - 356.

192.		A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr: "Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices"; Microelectronics Reliability, 43 (2003), 9-11; S. 1495 - 1500. Zusätzliche Informationen

191.		M. Nedjalkov, H. Kosina, S. Selberherr: "Monte Carlo Algorithms for Stationary Device Simulation"; Mathematics and Computers in Simulation, 62 (2003), 3-6; S. 453 - 461. Zusätzliche Informationen

190.		S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr: "Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle"; Journal of Applied Physics, 94 (2003), 9; S. 5791 - 5799. Zusätzliche Informationen

189.		V. M. Borzdov, V. O. Galenchik, H. Kosina, F. F. Komarov, O. G. Zhevnyak: "Monte Carlo Study of the Relative Frequency of Scattering Processes in Si-Inversion Layers"; Physics of Low-dimensional Structures, 5-6 (2003), S. 99 - 108.

188.		C. Heitzinger, A. Hössinger, S. Selberherr: "On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 7; S. 879 - 883. Zusätzliche Informationen

187.		H. Kosina, M. Nedjalkov: "Particle Models for Device Simulation"; International Journal of High Speed Electronics and Systems (eingeladen), 13 (2003), 13; S. 727 - 769.

186.		T. Binder, A. Hössinger, S. Selberherr: "Rigorous Integration of Semiconductor Process and Device Simulators"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 9; S. 1204 - 1214. Zusätzliche Informationen

185.		C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr: "Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 3; S. 285 - 292. Zusätzliche Informationen

184.		A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr: "Simulation of Void Formation in Interconnect Lines"; Proceedings of SPIE, 5117 (2003), S. 445 - 452. Zusätzliche Informationen

183.		M. Nedjalkov, H. Kosina, S. Selberherr: "Stochastic Interpretation of the Wigner Transport in Nanostructures"; Microelectronics Journal, 34 (2003), 5-8; S. 443 - 445. Zusätzliche Informationen

182.		H. Kosina, M. Nedjalkov, S. Selberherr: "The Stationary Monte Carlo Method for Device Simulation. I. Theory"; Journal of Applied Physics, 93 (2003), 6; S. 3553 - 3563. Zusätzliche Informationen

181.		M. Nedjalkov, H. Kosina, S. Selberherr: "The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation"; Journal of Applied Physics, 93 (2003), 6; S. 3564 - 3571. Zusätzliche Informationen

180.		J. Cervenka, R. Klima, M. Knaipp, S. Selberherr: "Three-Dimensional Device Optimization by Green's Functions"; European Physical Journal - Applied Physics, 21 (2003), S. 103 - 106. Zusätzliche Informationen

179.		M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr: "A Space Dependent Wigner Equation Including Phonon Interaction"; Journal of Computational Electronics, 1 (2002), 1-2; S. 27 - 31. Zusätzliche Informationen

178.		M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr: "A Wigner Equation with Quantum Electron-Phonon Interaction"; Microelectronic Engineering, 63 (2002), 1-3; S. 199 - 203. Zusätzliche Informationen

177.		T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations"; Applied Physics Letters, 80 (2002), 4; S. 613 - 615. Zusätzliche Informationen

176.		C. Heitzinger, S. Selberherr: "An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers"; Microelectronics Journal, 33 (2002), 1-2; S. 61 - 68. Zusätzliche Informationen

175.		H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles: "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs"; Journal of Computational Electronics, 1 (2002), 3; S. 371 - 374. Zusätzliche Informationen

174.		T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Characterization of the Hot Electron Distribution Function Using Six Moments"; Journal of Applied Physics, 91 (2002), 6; S. 3869 - 3879. Zusätzliche Informationen

173.		A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method"; Solid-State Electronics, 46 (2002), 10; S. 1545 - 1551. Zusätzliche Informationen

172.		T. Grasser, S. Selberherr: "Electro-Thermal Effects in Mixed-Mode Device Simulation"; Romanian Journal of Information Science and Technology, 5 (2002), 4; S. 339 - 354.

171.		T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr: "Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field"; Physica B: Condensed Matter, 314 (2002), 1-4; S. 301 - 304. Zusätzliche Informationen

170.		T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues"; Wisnik (eingeladen), 444 (2002), S. 28 - 41.

169.		T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models"; Wisnik (eingeladen), 444 (2002), S. 18 - 27.

168.		M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Revision of the Standard Hydrodynamic Transport Model for SOI Simulation"; IEEE Transactions on Electron Devices, 49 (2002), 10; S. 1814 - 1820. Zusätzliche Informationen

167.		A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function"; Journal of Applied Physics, 92 (2002), 10; S. 6019 - 6027. Zusätzliche Informationen

166.		H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Microelectronics Reliability, 42 (2002), 9-11; S. 1457 - 1460. Zusätzliche Informationen

165.		T. Grasser, S. Selberherr: "Technology CAD: Device Simulation and Characterization"; Journal of Vacuum Science & Technology B, 20 (2002), 1; S. 407 - 413. Zusätzliche Informationen

164.		M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr: "Transient Model for Terminal Current Noise"; Applied Physics Letters, 80 (2002), 4; S. 607 - 609. Zusätzliche Informationen

163.		M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov: "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors"; VLSI Design, 13 (2001), 1-4; S. 405 - 411. Zusätzliche Informationen

162.		R. Sabelka, S. Selberherr: "A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures"; Microelectronics Journal, 32 (2001), 2; S. 163 - 171. Zusätzliche Informationen

161.		V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "A Methodology for Deep Sub-0.25µm CMOS Technology Prediction"; IEEE Transactions on Electron Devices, 48 (2001), 10; S. 2331 - 2336. Zusätzliche Informationen

160.		T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz: "Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures "; Concurrency and Computation: Practice and Experience, 13 (2001), 10; S. 1 - 17.

159.		V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr: "Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors"; Radiation Effects and Defects in Solids, 156 (2001), 1-4; S. 261 - 265. Zusätzliche Informationen

158.		T. Grasser, S. Selberherr: "Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits"; IEEE Transactions on Electron Devices, 48 (2001), 7; S. 1421 - 1427. Zusätzliche Informationen

157.		F. Gamiz, J. Roldan, H. Kosina, T. Grasser: "Improving Strained-Si on Si_1-xGe_x Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile"; IEEE Transactions on Electron Devices, 48 (2001), 9; S. 1878 - 1884.

156.		V. Palankovski, R. Quay, S. Selberherr: "Industrial Application of Heterostructure Device Simulation"; IEEE Journal of Solid-State Circuits (eingeladen), 36 (2001), 9; S. 1365 - 1370. Zusätzliche Informationen

155.		M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs"; Solid-State Electronics, 45 (2001), 5; S. 621 - 627. Zusätzliche Informationen

154.		T. Grasser, H. Kosina, S. Selberherr: "Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling"; Journal of Applied Physics, 90 (2001), 12; S. 6165 - 6171. Zusätzliche Informationen

153.		T. Grasser, H. Kosina, S. Selberherr: "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data"; Applied Physics Letters, 79 (2001), 12; S. 1900 - 1902. Zusätzliche Informationen

152.		V. Palankovski, S. Selberherr: "Micro Materials Modeling in MINIMOS-NT"; Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7 (2001), 4; S. 183 - 187. Zusätzliche Informationen

151.		R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr: "Nonlinear Electronic Transport and Device Performance of HEMTs"; IEEE Transactions on Electron Devices, 48 (2001), 2; S. 210 - 217. Zusätzliche Informationen

150.		K. Dragosits, S. Selberherr: "Simulation of Ferroelectric Thin Films"; Radiation Effects and Defects in Solids, 156 (2001), 1-4; S. 157 - 161. Zusätzliche Informationen

149.		V. Palankovski, R. Schultheis, S. Selberherr: "Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide"; IEEE Transactions on Electron Devices, 48 (2001), 6; S. 1264 - 1269. Zusätzliche Informationen

148.		H. Kosina, M. Nedjalkov: "The Monte Carlo Method for Semi-Classical Charge Transport in Semiconductor Devices"; Mathematics and Computers in Simulation, 55 (2001), S. 93 - 102.

147.		K. Dragosits, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; IEEE Transactions on Electron Devices, 48 (2001), 2; S. 316 - 322. Zusätzliche Informationen

146.		T. Grasser, H. Kosina, M. Gritsch, S. Selberherr: "Using Six Moments of Boltzmann's Transport Equation for Device Simulation"; Journal of Applied Physics, 90 (2001), 5; S. 2389 - 2396. Zusätzliche Informationen

145.		M. Nedjalkov, H. Kosina: "Variance of the Ensemble Monte Carlo Algorithm for Semiconductor Transport Modeling"; Mathematics and Computers in Simulation, 55 (2001), 1-3; S. 191 - 198.

144.		A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr: "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation"; IEICE Transactions on Electronics, E83-C (2000), 8; S. 1259 - 1266.

143.		H. Kosina, M. Nedjalkov, S. Selberherr: "A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation"; Journal of Applied Physics, 87 (2000), 9; S. 4308 - 4314. Zusätzliche Informationen

142.		M. Nedjalkov, H. Kosina, S. Selberherr: "A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers"; IEICE Transactions on Electronics, E83-C (2000), 8; S. 1218 - 1223.

141.		R. Quay, C. Moglestue, V. Palankovski, S. Selberherr: "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials"; Materials Science in Semiconductor Processing, 3 (2000), 1-2; S. 149 - 155. Zusätzliche Informationen

140.		H. Brech, T. Grave, S. Selberherr: "Development of Global Calibration for Accurate GaAs-PHEMT Simulation"; IEEE Transactions on Electron Devices, 47 (2000), 10; S. 1957 - 1964. Zusätzliche Informationen

139.		M. Knaipp, W. Kanert, S. Selberherr: "Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure"; Solid-State Electronics, 44 (2000), 7; S. 1135 - 1143. Zusätzliche Informationen

138.		H. Puchner, R. Castagnetti, W. Pyka: "Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions"; Microelectronic Engineering, 53 (2000), S. 429 - 432.

137.		T. Grasser, S. Selberherr: "Mixed-Mode Device Simulation"; Microelectronics Journal, 31 (2000), 11-12; S. 873 - 881. Zusätzliche Informationen

136.		R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr: "On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 11; S. 1233 - 1240. Zusätzliche Informationen

135.		W. Pyka, R. Martins, S. Selberherr: "Optimized Algorithms for Three-Dimensional Cellular Topography Simulation"; IEEE Journal of Technology Computer Aided Design, 1 (2000), 20; S. 1 - 36. Zusätzliche Informationen

134.		A. Hössinger, E. Langer, S. Selberherr: "Parallelization of a Monte Carlo Ion Implantation Simulator"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 5; S. 560 - 567. Zusätzliche Informationen

133.		R. Strasser, S. Selberherr: "Practical Inverse Modeling with SIESTA"; IEICE Transactions on Electronics, 83-C (2000), 8; S. 1303 - 1310.

132.		H. Kosina, M. Nedjalkov, S. Selberherr: "Theory of the Monte Carlo Method for Semiconductor Device Simulation"; IEEE Transactions on Electron Devices, 47 (2000), 10; S. 1898 - 1908. Zusätzliche Informationen

131.		W. Pyka, H. Kirchauer, S. Selberherr: "Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography"; Microelectronic Engineering, 53 (2000), 1-4; S. 449 - 452. Zusätzliche Informationen

130.		H. Kosina: "A Method to Reduce Small-Angle Scattering in Monte Carlo Device Analysis"; IEEE Transactions on Electron Devices, 46 (1999), 6; S. 1196 - 1200.

129.		M. Radi, E. Leitner, S. Selberherr: "AMIGOS: Analytical Model Interface & General Object-Oriented Solver"; IEEE Journal of Technology Computer Aided Design, 1 (1999), 17; S. 1 - 72. Zusätzliche Informationen

128.		B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr: "An Energy Relaxation Time Model for Device Simulation"; Solid-State Electronics, 43 (1999), 9; S. 1791 - 1795. Zusätzliche Informationen

127.		K. Zankel, H. Kosina: "Capacitance Simulation of Irradiated Semiconductor Detectors"; Il Nuovo Cimento, 112 (1999), 1-2; S. 43 - 47.

126.		M. Stockinger, A. Wild, S. Selberherr: "Drive Performance of an Asymmetric MOSFET Structure: The Peak Device"; Microelectronics Journal, 30 (1999), 3; S. 229 - 233. Zusätzliche Informationen

125.		P. Fleischmann, W. Pyka, S. Selberherr: "Mesh Generation for Application in Technology CAD"; IEICE Transactions on Electronics (eingeladen), E82-C (1999), 6; S. 937 - 947.

124.		C. Pichler, R. Plasun, R. Strasser, S. Selberherr: "Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools"; IEEE Transactions on Semiconductor Manufacturing, 12 (1999), 1; S. 76 - 86. Zusätzliche Informationen

123.		V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr: "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices"; Materials Science and Engineering B, 66 (1999), 1-3; S. 46 - 49. Zusätzliche Informationen

122.		W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr: "Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18 (1999), 12; S. 1741 - 1749. Zusätzliche Informationen

121.		K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; Journal of the Korean Physical Society, 35 (1999), 92; S. 104 - 106. Zusätzliche Informationen

120.		R. Martins, S. Selberherr, F. Vaz: "A CMOS IC for Portable EEG Acquisition Systems"; IEEE Transactions on Instrumentation and Measurement, 47 (1998), 5; S. 1191 - 1196. Zusätzliche Informationen

119.		C. Wasshuber, H. Kosina, S. Selberherr: "A Comparative Study of Single-Electron Memories"; IEEE Transactions on Electron Devices, 45 (1998), 11; S. 2365 - 2371. Zusätzliche Informationen

118.		H. Kosina, M. Harrer: "A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure"; VLSI Design, 6 (1998), 1-4; S. 205 - 208. Zusätzliche Informationen

117.		G. Kaiblinger-Grujin, H. Kosina: "An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations"; VLSI Design, 6 (1998), 1-4; S. 209 - 212. Zusätzliche Informationen

116.		G. Schrom, A. Stach, S. Selberherr: "An Interpolation Based MOSFET Model for Low-Voltage Applications"; Microelectronics Journal, 29 (1998), 8; S. 529 - 534. Zusätzliche Informationen

115.		S. Selberherr: "Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren"; E&I Elektrotechnik und Informationstechnik (eingeladen), 115 (1998), 7/8; S. 344 - 348. Zusätzliche Informationen

114.		C. Wasshuber: "Grenzen der Miniaturisierung - Die Zukunft der Mikroelektronik"; Informatik Spektrum (eingeladen), 21 (1998), 4; S. 223 - 226.

113.		R. Martins, W. Pyka, R. Sabelka, S. Selberherr: "High-Precision Interconnect Analysis"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 11; S. 1148 - 1159. Zusätzliche Informationen

112.		G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Influence of the Doping Element on the Electron Mobility in n-Silicon"; Journal of Applied Physics, 83 (1998), 6; S. 3096 - 3101. Zusätzliche Informationen

111.		R. Plasun, M. Stockinger, S. Selberherr: "Integrated Optimization Capabilities in the VISTA Technology CAD Framework"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; S. 1244 - 1251. Zusätzliche Informationen

110.		H. Kosina, G. Kaiblinger-Grujin: "Ionized-Impurity Scattering of Majority Electrons in Silicon"; Solid-State Electronics, 42 (1998), 3; S. 331 - 338. Zusätzliche Informationen

109.		E. Leitner, S. Selberherr: "Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 7; S. 561 - 572. Zusätzliche Informationen

108.		W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Monte Carlo Simulation of Silicon Amorphization during Ion Implantation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; S. 1236 - 1243. Zusätzliche Informationen

107.		M. Nedjalkov, I. Dimov, H. Haug: "Numerical Studies of the Markovian Limit of the Quantum Kinetics with Phonon Scattering"; Physica Status Solidi B - Basic Solid State Physics, 209 (1998), 1; S. 109 - 121.

106.		H. Kosina, C. Troger: "SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands"; VLSI Design, 8 (1998), 1-4; S. 489 - 493. Zusätzliche Informationen

105.		C. Wasshuber, H. Kosina: "Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge"; VLSI Design, 6 (1998), 1-4; S. 35 - 38. Zusätzliche Informationen

104.		C. Wasshuber, H. Kosina, S. Selberherr: "Single-Electron Memories"; VLSI Design, 8 (1998), 1-4; S. 219 - 223. Zusätzliche Informationen

103.		H. Kirchauer, S. Selberherr: "Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination"; Proceedings of SPIE, 3334 (1998), S. 764 - 776. Zusätzliche Informationen

102.		G. Schrom, De Vivek, S. Selberherr: "VLSI Performance Metric Based on Minimum TCAD Simulations"; IEEE Journal of Technology Computer Aided Design, 1 (1998), 12; S. 1 - 29. Zusätzliche Informationen

101.		H. Noll, S. Selberherr: "Zur Entwicklung der Mikroelektronik"; Telematik, 4 (1998), 1; S. 2 - 6.

100.		C. Wasshuber, H. Kosina: "A Single-Electron Device and Circuit Simulator"; Superlattices and Microstructures, 21 (1997), 1; S. 37 - 42. Zusätzliche Informationen

99.		C. Wasshuber, H. Kosina, S. Selberherr: "A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling"; IEEE Journal of Technology Computer Aided Design, 1 (1997), 7; S. 1 - 18. Zusätzliche Informationen

98.		H. Kosina: "Efficient Evaluation of Ionized-Impurity Scattering in Monte Carlo Transport Calculations"; Physica Status Solidi A, 163 (1997), 2; S. 475 - 489.

97.		P. Fleischmann, S. Selberherr: "Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD"; IEEE Journal of Technology Computer Aided Design, 1 (1997), 8; S. 1 - 38. Zusätzliche Informationen

96.		C. Pichler, R. Plasun, R. Strasser, S. Selberherr: "High-Level TCAD Task Representation and Automation"; IEEE Journal of Technology Computer Aided Design, 1 (1997), 5; S. 1 - 30. Zusätzliche Informationen

95.		Kaiblinger-Grujin, G., Kosina, H., Köpf, Ch., Selberherr, S. (1997). Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors. Materials Science Forum, 258–263, 939–944. https://doi.org/10.4028/www.scientific.net/msf.258-263.939 (reposiTUm)

94.		H. Brech, T. Grave, T. Simlinger, S. Selberherr: "Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations"; IEEE Transactions on Electron Devices, 44 (1997), 11; S. 1822 - 1828. Zusätzliche Informationen

93.		C. Köpf, H. Kosina, S. Selberherr: "Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport"; Solid-State Electronics, 41 (1997), 8; S. 1139 - 1152. Zusätzliche Informationen

92.		H. Kirchauer, S. Selberherr: "Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 12; S. 1431 - 1438. Zusätzliche Informationen

91.		C. Wasshuber, H. Kosina, S. Selberherr: "SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 9; S. 937 - 944. Zusätzliche Informationen

90.		T. Simlinger, H. Brech, T. Grave, S. Selberherr: "Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT"; IEEE Transactions on Electron Devices, 44 (1997), 5; S. 700 - 707. Zusätzliche Informationen

89.		H. Kirchauer, S. Selberherr: "Three-Dimensional Photolithography Simulation"; IEEE Journal of Technology Computer Aided Design, 1 (1997), 6; S. 1 - 37. Zusätzliche Informationen

88.		K. Vinzenz, S. Selberherr: "Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen"; Acta Chirurgica Austriaca (eingeladen), 28 (1996), 1; S. 60 - 61.

87.		G. Schrom, C. Pichler, T. Simlinger, S. Selberherr: "On the Lower Bounds of CMOS Supply Voltage"; Solid-State Electronics, 39 (1996), 4; S. 425 - 430. Zusätzliche Informationen

86.		N. Khalil, J. Faricelli, C. Huang, S. Selberherr: "Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling"; Journal of Vacuum Science & Technology B, 14 (1996), 1; S. 224 - 230. Zusätzliche Informationen

85.		Strasser, E., Selberherr, S. (1995). Algorithms and Models for Cellular Based Topography Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14(9), 1104–1114. https://doi.org/10.1109/43.406712 (reposiTUm)

84.		Puchner, H., Selberherr, S. (1995). An Advanced Model for Dopant Diffusion in Polysilicon. IEEE Transactions on Electron Devices, 42(10), 1750–1755. https://doi.org/10.1109/16.464423 (reposiTUm)

83.		Kosina, H., Langer, E., Selberherr, S. (1995). Device Modelling for the 1990s. Microelectronics Journal, 26(2–3), 217–233. https://doi.org/10.1016/0026-2692(95)98923-f (reposiTUm)

82.		Stippel, H., Leitner, E., Pichler, Ch., Puchner, H., Strasser, E., Selberherr, S. (1995). Process Simulation for the 1990s. Microelectronics Journal, 26(2–3), 203–215. https://doi.org/10.1016/0026-2692(95)98922-e (reposiTUm)

81.		Habas, P., Prijić, Z., Pantić, D. (1995). The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs. Microelectronic Engineering, 28(1–4), 171–174. https://doi.org/10.1016/0167-9317(95)00038-a (reposiTUm)

80.		Khalil, N., Faricelli, J., Bell, D., Selberherr, S. (1995). The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling. IEEE Electron Device Letters, 16(1), 17–19. https://doi.org/10.1109/55.363213 (reposiTUm)

79.		Mukai, M., Tatsumi, T., Nakauchi, N., Kobayashi, T., Koyama, K., Komatsu, Y., Bauer, R., Rieger, G., Selberherr, S. (1995). The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI. Technical Report of IEICE, 95(223), 63–68. (reposiTUm)

78.		Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Lindorfer, P., Pichler, Ch., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., Selberherr, S. (1995). The Viennese Integrated System for Technology CAD Applications. Microelectronics Journal, 26(2–3), 137–158. https://doi.org/10.1016/0026-2692(95)98918-h (reposiTUm)

77.		Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S. (1995). Trajectory Split Method for Monte Carlo Simulation of Ion Implantation. IEEE Transactions on Semiconductor Manufacturing, 8(4), 402–407. https://doi.org/10.1109/66.475181 (reposiTUm)

76.		Brand, H., Selberherr, S. (1995). Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor. IEEE Transactions on Electron Devices, 42(12), 2137–2146. https://doi.org/10.1109/16.477772 (reposiTUm)

75.		Halama, S., Pichler, C., Rieger, G., Schrom, G., Simlinger, T., Selberherr, S. (1995). VISTA - User Interface, Task Level, and Tool Integration. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14(10), 1208–1222. https://doi.org/10.1109/43.466337 (reposiTUm)

74.		Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessene, F., Dollfus, P., Dutton, R., Engl, W. L., Fauquembergue, R., Fiegna, C., Fischetti, M. V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., … Yoshii, A. (1994). A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon. IEEE Transactions on Electron Devices, 41(9), 1646–1654. https://doi.org/10.1109/16.310119 (reposiTUm)

73.		Kosina, H., Selberherr, S. (1994). A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13(2), 201–210. https://doi.org/10.1109/43.259943 (reposiTUm)

72.		Strasser, E., Schrom, G., Wimmer, K., Selberherr, S. (1994). Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations. IEICE Transactions on Electronics, E77-C(2), 92–97. (reposiTUm)

71.		Brand, H., Selberherr, S. (1994). Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT). IEICE Transactions on Electronics, E77-C(2), 179–186. (reposiTUm)

70.		Stippel, H., Selberherr, S. (1994). Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree. IEICE Transactions on Electronics, E77-C(2), 118–123. (reposiTUm)

69.		Fasching, F., Tuppa, W., Selberherr, S. (1994). VISTA - The Data Level. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13(1), 72–81. https://doi.org/10.1109/43.273748 (reposiTUm)

68.		Fischer, C., Nanz, G., Selberherr, S. (1993). Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas. Computer Methods in Applied Mechanics and Engineering, 110(1–2), 17–24. https://doi.org/10.1016/0045-7825(93)90016-q (reposiTUm)

67.		Halama, S., Selberherr, S. (1993). Future Aspects of Process and Device Simulation. Electron Technology, 26, 49–57. (reposiTUm)

66.		Selberherr, S. (1993). Technology Computer-Aided Design. South African Journal of Physics, 16(1/2), 1–5. (reposiTUm)

65.		Nanz, G., Dickinger, P., Selberherr, S. (1992). Calculation of Contact Currents in Device Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11(1), 128–136. https://doi.org/10.1109/43.108625 (reposiTUm)

64.		M. Hackel, M. Faber, H. Markum, M. Müller: "Chiral Interface for QCD with Dynamical Quarks"; International Journal of Modern Physics C, 3 (1992), 5; S. 961 - 970. Zusätzliche Informationen

63.		Heinreichsberger, O., Selberherr, S., Stiftinger, M., Traar, K. P. (1992). Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation. SIAM Journal on Scientific and Statistical Computing, 13(1), 289–306. https://doi.org/10.1137/0913015 (reposiTUm)

62.		Hackel, M., Faber, M., Markum, H. (1992). Interface Tension and Chiral Order Parameter Profile with Dynamical Quarks. Physical Review D, 46(12), 5648–5654. (reposiTUm)

61.		Habas, P., Faricelli, J. V. (1992). Investigation of the Physical Modeling of the Gate-Depletion Effect. IEEE Transactions on Electron Devices, 39(6), 1496–1500. https://doi.org/10.1109/16.137331 (reposiTUm)

60.		Demel, J., Selberherr, S. (1991). Application of the Complete Tableau Approach in JANAP. Electrosoft, 2(6), 243–260. (reposiTUm)

59.		Selberherr, S. (1991). Device Modeling and Physics. Physica Scripta, T35, 293–298. https://doi.org/10.1088/0031-8949/1991/t35/057 (reposiTUm)

58.		E. Langer: "Fundamental Analysis of Surface Acoustic Wave Propagation"; International Journal of Engineering Science, 29 (1991), 3; S. 331 - 343. Zusätzliche Informationen

57.		Selberherr, S., Stiftinger, M., Heinreichsberger, O., Traar, K. P. (1991). On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers. Computer Physics Communications, 67(1), 145–156. https://doi.org/10.1016/0010-4655(91)90227-c (reposiTUm)

56.		Nanz, G., Kausel, W., Selberherr, S. (1991). Self-Adaptive Space and Time Grids in Device Simulation. International Journal for Numerical Methods in Engineering, 31(7), 1357–1374. https://doi.org/10.1002/nme.1620310709 (reposiTUm)

55.		P. Habas: "A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility"; Solid-State Electronics, 33 (1990), 7; S. 923 - 933. Zusätzliche Informationen

54.		Kausel, W., Nylander, J. O., Nanz, G., Selberherr, S., Poetzl, H. (1990). BAMBI - A Transient 2D-MESFET Model with General Boundary Conditions Including Schottky and Current Controlled Contacts. Microelectronics Journal, 21(5), 5–21. https://doi.org/10.1016/0026-2692(90)90014-t (reposiTUm)

53.		Kosina, H., Selberherr, S. (1990). Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics, 29(12A), L2283. https://doi.org/10.1143/jjap.29.l2283 (reposiTUm)

52.		E. Langer: "Fundamental Analysis of Surface Acoustic Wave Propagation"; Archiv für Elektronik und Übertragungstechnik, 44 (1990), 3; S. 225 - 232.

51.		Habas, P., Selberherr, S. (1990). Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices. Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20(4), 185–188. (reposiTUm)

50.		P. Dickinger: "New Models of High Voltage DMOS Devices for Circuit Simulation"; Electrosoft, 1 (1990), 4; S. 298 - 308.

49.		Thurner, M., Lindorfer, P., Selberherr, S. (1990). Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9(11), 1189–1197. https://doi.org/10.1109/43.62756 (reposiTUm)

48.		Habaš, P., Selberherr, S. (1990). On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling. Solid-State Electronics, 33(12), 1539–1544. https://doi.org/10.1016/0038-1101(90)90134-z (reposiTUm)

47.		E. Langer: "Special Issue on "Semiconductor devices and electronic circuit design""; Electrosoft, 1 (1990), 4.

46.		Selberherr, S., Hänsch, W., Seavey, M., Slotboom, J. (1990). The Evolution of the MINIMOS Mobility Model. AEÜ - International Journal of Electronics and Communications, 44(3), 161–172. (reposiTUm)

45.		S. Selberherr, E. Langer: "Three Dimensional Process and Device Modeling"; Microelectronics Reliability, 30 (1990), 3; S. 624. Zusätzliche Informationen

44.		Thurner, M., Selberherr, S. (1990). Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed with MINIMOS 5. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9(8), 856–867. https://doi.org/10.1109/43.57786 (reposiTUm)

43.		Nylander, J. O., Masszi, F., Selberherr, S., Berg, S. (1989). Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity. Solid-State Electronics, 32(5), 363–367. https://doi.org/10.1016/0038-1101(89)90125-1 (reposiTUm)

42.		Selberherr, S. (1989). MOS Device Modeling at 77K. IEEE Transactions on Electron Devices, 36(8), 1464–1474. https://doi.org/10.1109/16.30960 (reposiTUm)

41.		Hobler, G., Selberherr, S. (1989). Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8(5), 450–459. https://doi.org/10.1109/43.24873 (reposiTUm)

40.		Selberherr, S. (1989). Process Modeling. Microelectronic Engineering, 9(1–4), 605–610. https://doi.org/10.1016/0167-9317(89)90129-9 (reposiTUm)

39.		Selberherr, S., Langer, E. (1989). Three Dimensional Process and Device Modeling. Microelectronics Journal, 20(1–2), 113–127. https://doi.org/10.1016/0026-2692(89)90126-2 (reposiTUm)

38.		Kausel, W., Poetzl, H., Nanz, G., Selberherr, S. (1989). Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor. Solid-State Electronics, 32(9), 685–709. https://doi.org/10.1016/0038-1101(89)90002-6 (reposiTUm)

37.		Selberherr, S. (1988). Computer für Wissenschaft und Forschung. Österreichische Hochschulzeitung, 5, 9–10. (reposiTUm)

36.		Selberherr, S. (1988). Computerunterstützte Konstruktion von Bauelementen der Mikroelektronik. Österreichische Hochschulzeitung, 7, 25. (reposiTUm)

35.		Hobler, G., Selberherr, S. (1988). Two-Dimensional Modeling of Ion Implantation Induced Point Defects. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7(2), 174–180. https://doi.org/10.1109/43.3147 (reposiTUm)

34.		BUDIL, M., GUERRERO, E., BRABEC, T., SELBERHERR, S., POETZL, H. (1987). A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6(1), 37–44. https://doi.org/10.1108/eb010299 (reposiTUm)

33.		Hänsch, W., Selberherr, S. (1987). MINIMOS 3: A MOSFET Simulator that Includes Energy Balance. IEEE Transactions on Electron Devices, 34(5), 1074–1078. https://doi.org/10.1109/t-ed.1987.23047 (reposiTUm)

32.		Hobler, G., Langer, E., Selberherr, S. (1987). Two-Dimensional Modeling of Ion Implantation with Spatial Moments. Solid-State Electronics, 30(4), 445–455. https://doi.org/10.1016/0038-1101(87)90175-4 (reposiTUm)

31.		Baghai-Wadji, A. R., Selberherr, S., Seifert, F. J. (1986). Two-Dimensional Green’s Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 33(3), 315–317. https://doi.org/10.1109/t-uffc.1986.26834 (reposiTUm)

30.		S. Selberherr: "Process and Device Modeling for VLSI"; Microelectronics Journal, 16 (1985), 6; S. 56 - 57. Zusätzliche Informationen

29.		Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H. (1985). Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods. IEEE Journal of Solid-State Circuits, 20(1), 76–87. https://doi.org/10.1109/jssc.1985.1052279 (reposiTUm)

28.		Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H. (1985). Simulation of Critical IC-Fabrication Steps. IEEE Transactions on Electron Devices, 32(10), 1940–1953. https://doi.org/10.1109/t-ed.1985.22226 (reposiTUm)

27.		Pichler, P., Jüngling, W., Selberherr, S., Pötzl, H. (1985). Two-Dimensional Coupled Diffusion Modeling. Physica B: Condensed Matter, 129(1–3), 187–191. https://doi.org/10.1016/0378-4363(85)90566-2 (reposiTUm)

26.		Markowich, P. A., Selberherr, S. (1984). A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments. Computational and Applied Mathematics, 3(2), 131–156. (reposiTUm)

25.		Selberherr, S., Ringhofer, C. A. (1984). Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3(1), 52–64. https://doi.org/10.1109/tcad.1984.1270057 (reposiTUm)

24.		Schütz, A., Selberherr, S., Pötzl, H. (1984). Modeling MOS-Transistors in the Avalanche Breakdown Regime. Transactions on Computer Simulation, 1(1), 1–14. (reposiTUm)

23.		JÜNGLING, W., GUERRERO, E., SELBERHERR, S. (1984). On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation. COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3(2), 79–105. https://doi.org/10.1108/eb009989 (reposiTUm)

22.		Selberherr, S. (1984). Process and Device Modeling for VLSI. Microelectronics Reliability, 24(2), 225–257. https://doi.org/10.1016/0026-2714(84)90450-5 (reposiTUm)

21.		Schütz, A., Selberherr, S., Pötzl, H. W. (1984). Temperature Distribution and Power Dissipation in MOSFETs. Solid-State Electronics, 27(4), 394–395. https://doi.org/10.1016/0038-1101(84)90175-8 (reposiTUm)

20.		Demel, J., Selberherr, S. (1984). VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in Fortran. Angewandte Informatik, 6, 244–247. (reposiTUm)

19.		Machek, J., Selberherr, S. (1983). A Novel Finite-Element Approach to Device Modeling. IEEE Transactions on Electron Devices, 30(9), 1083–1092. https://doi.org/10.1109/t-ed.1983.21262 (reposiTUm)

18.		Markowich, P. A., Ringhofer, Ch., Selberherr, S. (1983). A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices. MRC Technical Summary Report, 2482, 1–50. (reposiTUm)

17.		Markowich, P. A., Ringhofer, C. A., Selberherr, S., Lentini, M. (1983). A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations. IEEE Transactions on Electron Devices, 30(9), 1165–1180. https://doi.org/10.1109/t-ed.1983.21273 (reposiTUm)

16.		Markowich, P. A., Ringhofer, Ch., Langer, E., Selberherr, S. (1983). An Asymptotic Analysis of Single-Junction Semiconductor Devices. MRC Technical Summary Report, 2527, 1–62. (reposiTUm)

15.		Franz, A. F., Franz, G. A., Selberherr, S., Ringhofer, C., Markowich, P. (1983). Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation. IEEE Transactions on Electron Devices, 30(9), 1070–1082. https://doi.org/10.1109/t-ed.1983.21261 (reposiTUm)

14.		Ringhofer, Ch., Selberherr, S. (1983). Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs. MRC Technical Summary Report, 2513, 1–49. (reposiTUm)

13.		Langer, E., Selberherr, S., Markowich, P. A., Ringhofer, C. A. (1983). Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials. Sensors and Actuators, 4, 71–76. https://doi.org/10.1016/0250-6874(83)85010-0 (reposiTUm)

12.		Langer, E., Selberherr, S., Mader, H. (1982). A Numerical Analysis of Bulk-Barrier Diodes. Solid-State Electronics, 25(4), 317–324. https://doi.org/10.1016/0038-1101(82)90141-1 (reposiTUm)

11.		Markowich, P. A., Ringhofer, Ch., Selberherr, S., Langer, E. (1982). A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device. MRC Technical Summary Report, 2388, 1–57. (reposiTUm)

10.		Schütz, A., Selberherr, S., Pötzl, H. W. (1982). A Two-Dimensional Model of the Avalanche Effect in MOS Transistors. Solid-State Electronics, 25(3), 177–183. https://doi.org/10.1016/0038-1101(82)90105-8 (reposiTUm)

9.		Schütz, A., Selberherr, S., Pötzl, H. (1982). Analysis of Breakdown Phenomena in MOSFET’s. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1(2), 77–85. https://doi.org/10.1109/tcad.1982.1269997 (reposiTUm)

8.		Goebl, H., Selberherr, S., Rase, W. D., Pudlatz, H. (1982). Atlas, Matrices et Similarités: Petit Aperçu Dialectométrique. Computers and the Humanities, 16(2), 69–84. https://doi.org/10.1007/bf02259737 (reposiTUm)

7.		Selberherr, S., Schütz, A., Pötzl, H. (1982). Investigation of Parameter Sensitivity of Short Channel MOSFETs. Solid-State Electronics, 25(2), 85–90. https://doi.org/10.1016/0038-1101(82)90035-1 (reposiTUm)

6.		Langer, E., Selberherr, S., Mader, H. (1982). Numerische Analyse der Bulk-Barrier Diode. AEÜ - International Journal of Electronics and Communications, 36(2), 86–91. (reposiTUm)

5.		Selberherr, S., Guerrero, E. (1981). Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals. Solid-State Electronics, 24(6), 591–593. https://doi.org/10.1016/0038-1101(81)90081-2 (reposiTUm)

4.		Selberherr, S., Schütz, A., Pötzl, H. (1981). Two-Dimensional MOS Transistor Modelling. European Electronics, 1(3), 20–30. (reposiTUm)

3.		Selberherr, S., Schütz, A., Pötzl, H. (1980). MINIMOS - A Two-Dimensional MOS Transistor Analyzer. IEEE Transactions on Electron Devices, 27(8), 1540–1550. https://doi.org/10.1109/t-ed.1980.20068 (reposiTUm)

2.		Selberherr, S., Schütz, A., Pötzl, H. (1980). MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 1). Elektronikschau, 9, 18–23. (reposiTUm)

1.		Selberherr, S., Schütz, A., Pötzl, H. (1980). MINIMOS - Zweidimensionale Modellierung von MOS-Transistoren (Teil 2). Elektronikschau, 10, 54–58. (reposiTUm)