Professors

Tibor Grasser
Univ.Prof. Dipl.-Ing. Dr.techn., Head of Institute
Preface
Michael Waltl
Univ.Prof. Dipl.-Ing. Dr.techn., Deputy Head of Institute
Preface
Siegfried Selberherr
Em. O.Univ.Prof. Dipl.-Ing. Dr.techn. Dr.h.c.
Preface
Hajdin Ceric
Associate Prof. Dipl.-Ing. Dr.techn.
Enhancing Interconnect Reliability by Nano-Twinned Grains
Lado Filipovic
Associate Prof. Dr.techn.
Green Technology Development with Machine Learning Supported Process TCAD
Theresia Knobloch
Dipl.-Ing. Dr.techn.
Modeling the Reliability of Field-Effect Transistors Based on Two-Dimensional Semiconductors
Hans Kosina
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.
Carrier Transport in Nanostructured Semiconductor Devices
Viktor Sverdlov
Assistant Prof. Privatdoz. MSc PhD
Modeling Emerging Ultra-Scaled Magnetoresistive Memories
Josef Weinbub
Privatdoz. Dipl.-Ing. Dr.techn.
Controlling Single Electrons by Non-Uniform Magnetic Fields

Administration

Mahmood Bayat
Apprentice
Petra Kamptner-Jonas
Secretary
Manfred Katterbauer
Dipl.-Ing.(FH)
Theresa Kilian
MA , Secretary
Diana Pop
MA MSc , Administrative Coordinator
Markus Schloffer
Ing.
Sabrina Wagenknecht
Secretary
Daniel Weidinger
Apprentice
Florian Wimmer
BSc
Katharina Zeh
BA , Secretary Master Computational Science and Engineering

Researchers

Mina Bahrami
MSc
Defects in Strontium Titanate: A First-Principles Study
Balazs Bamer
MSc
Cluster-Based Physical Model for Dopant Activation in Silicon Carbide
Mario Bendra
Univ.Ass. Dipl.-Ing.
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures
Anna Benzer
MSc
Mauro Borghi
MSc
Molecular Beam Epitaxy of Fluorides on Conductive Materials
Mate Capin
MSc
Exploring the Gas Interaction Properties of MoS2 and Its Doped Derivatives
Johann Cervenka
Senior Scientist Dipl.-Ing. Dr.techn.
Extension of the Deterministic Approach of the Wigner Formalism
Lukas Cvitkovich
Univ.Ass. Dipl.-Ing.
Coherence Limit Due to Hyperfine Interaction with Nuclei in the Barrier Material of Si Spin Qubits
Mohammad Davoudi
MSc
Investigating the Quality of Insulating Layers as the Origin of Key Reliability Issues
Mohammad Dehghani
Dr.
Ab initio Calculation of Phonon-limited Carrier Mobility in Semiconductor Alloys
Johannes Ender
Univ.Ass. MSc
Clemens Etl
Dipl.-Ing.
Signed-Particle Monte Carlo Algorithm for Wigner Transport in Linear Electromagnetic Fields
Ang Feng
PhD
Leakage Current in SiC Power MOSFETs
Rittik Ghosh
MSc
Josef Gull
Univ.Ass. Dipl.-Ing.
Improvements of Monte Carlo Algorithms for Electron-Electron Scattering
Tomas Hadamek
MSc
Temperature Modeling in Novel MRAM Devices and Its Effects on Switching Characteristics
Zoltan Hajnal
PhD
Oliver Hartwig
MSc
Deposition of CaF2 Thin Films on TMDs and Metals
Yoanlys Hernandez
D.Sc.
Nils Petter Jorstad
MSc
Unconventional Spin-Orbit Torques in Ferromagnetic Trilayers
Alexander Karl
Univ.Ass. Dipl.-Ing.
Investigating the Hysteresis in the Transfer Characteristics of 2D-MOSFETs
Pedram Khakbaz
PhD
2D Bi2O2Se and Its Native Oxides: First-Principles Study
Robert Kosik
Dipl.-Ing. Dr.techn.
Joel Kurzweil
MSc
Compact Modeling of Ferroelectric Devices in Comphy
David Lamprecht
MSc
Atom-Level Substitutional Doping of MoS2 Monolayers
Sabine Leroch
Dipl.-Ing. Dr.
The Impact of Implantation Conditions on the Dopant Activation and Annealing of Defects
Paul Manstetten
Senior Scientist Dipl.-Ing.(FH) Dr.techn.
Git-based Programming Exercises
Mohammad Reza Monazam
Dr.rer.nat.
Native Defects in β-Bi2O5Se: Ab initio Study
Roberto Orio
Senior Scientist Dr.techn. MSc
Switching Efficiency of a Spin-Orbit Torque MRAM Assisted by Voltage-Controlled Magnetic Anisotropy
Alexandros Provias
MSc
Experimental Characterization of MoS2 FETs and CaF2 Capacitors
Bernhard Pruckner
Dipl.-Ing.
Magnetic Spin Hall Driven Field-Free Magnetization Switching of SOT-MRAM Devices
Tobias Reiter
Univ.Ass. Dipl.-Ing.
Modeling Oxide Regrowth During Etching of Vertical 3D NAND Structures
Seyedmahdi Sattari
PhD
Fabrication and Reliability Characterization of High-k 2D FET Devices
Igor Sokolovic
Dr.rer.nat. MSc
Growth of CaF2 on Metal Supports and the Search for Alternative Dielectrics
Bernhard Stampfer
Senior Scientist Dipl.-Ing. Dr.techn.
Developing Specialized Measurement Equipment for Semiconductor Reliability Studies
Felix Stampfl
Univ.Ass. Dipl.-Ing.
Evaluation of Random Telegraph Noise in MOSFET Devices
Konstantinos Tselios
Dr.techn. MSc
Evaluation of the Impact of Body Bias on the Threshold Voltage Drift of  SiO2 Transistors
Dominic Waldhör
Dipl.-Ing. BSc
Identifying Defects in Charge Trapping Related Phenomena
Christoph Wilhelmer
Univ.Ass. Dipl.-Ing.
Electron Polarons in Amorphous Hydrogenated Silicon Nitride (a-Si3N4:H)