A variety of RF and microwave electronic devices can be fabricated using SiC. In particular,
SiC transistors such as MESFETs (MEtal Semiconductor Field-Effect Transistors) and SITs
(Static Induction Transistors) with excellent DC and RF performance have been demonstrated and
these devices are being developed for microwave power amplifier and oscillator
applications. This section focuses on the simulation of microwave SiC MESFETs.
Subsections