B. Best Reported SiC Devices

Table B.1: Best reported high-voltage SiC devices.

DEVICES	POLYTYPE	$V_\mathrm{B}$ [kV]	$R_\mathrm{on,sp}$ [m$\Omega$cm$^2$]	$V^2_\mathrm{B}$/ $R_\mathrm{on,sp}$ [MW/cm$^2$]	GROUP
RECTIFIERS
SBD	4H	4.9	43	558	Purdue [189,190]
PiN	4H	4.5	42	482	RPI [191]
PiN	4H	19.5	65	5850	CREE [65,168]
JBS	4H	2.8	8	980	KTH-ABB [192]
MPS	4H	1.5	10	225	CREE [65,177]
POWER TRANSISTORS
UMOSFET	4H	5.05	105	243	Purdue [189]
UMOSFET	4H	3.06	121	77	Purdue [189]
DMOSFET	6H	1.8	46	70	SiCED [193,194]
DMOSFET	4H	2.4	42	137	CREE [65,181]
ACCUFET	4H	1.4	15.7	125	Purdue [189,169]
SEMOSFET	4H	5	88	284	CREE [65,195]
SIAFET	4H	6.1	732	51	CREE [65,196]
JFET	4H	5.5	218	139	CREE [65,197]
VJFET	4H	2	70	57	Hitachi [198]
VJFET	4H	3.5	25	490	SiCED [193,199]
BJT	4H	1.8	10.8	300	CREE [65,170]
BJT	4H	0.5	50	5	Purdue [189,200]
GTO	4H	3.1	16.6	579	CREE [65,171]

Table B.2: Best reported high-frequency devices.

RF TRANSISTORS
DEVICES	POLYTYPE	OPERATING FREQUENCY [GHz]	POWER DENSITY [W/mm]	TOTAL POWER [W]	MODE	GROUP
IMPATT Diode	4H	9.9	0.3	243	Pulsed	Ioeff Inst. [201]
IMPATT Diode	4H	7.2	121	12 dBm 400 mA 9 kA/cm$^2$	Pulsed	Purdue [189,202]
MESFET	4H	3.5	5.2	62	Pulsed	CREE [65,203]
MESFET	4H	10	4.5	54	Pulsed	CREE [65,204]
MESFET	4H	2	4	8	CW	Thomson [205]
SIT	4H	1.3	1.6	16	CW	Northrop Grumman [70,206]
SAI-SIT	4H	3	1.51	150	Pulsed	Northrop Grumman [70,207]
GaN HEMT		3.5	12.1	145	Pulsed	CREE [65,203]
AlGaN HEMT		10	4.2	50.1	Pulsed	CREE [65,203]
AlGaN HEMT		20	6.6	1.32	CW	HRL Lab [208]
Si MOSFET		1.9	0.32	2.4	CW	Hitachi [209]
GaAS MODEFT		2.16	2.22	200	Pulsed	Matsushita [210]

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation