|
Si |
4H-SiC |
6H-SiC |
3C-SiC |
Bandgap energy
|
[eV] |
|
1.12 |
3.26 |
3.03 |
2.4 |
Relative dielectric |
constant
|
|
11.9 |
9.7 |
9.66 |
9.72 |
Breakdown Field
|
@ N=10cm[MV/cm] |
|
0.3 |
c-axis: 3.0 |
|
|
Thermal Conductivity |
[W/cmK] |
|
1.31 |
4.9 |
4.9 |
3.2 |
Intrinsic Carrier |
Concentration
[cm] |
|
9.65
|
5
|
1.6
|
1.5
|
Electron Mobility
|
@ N=10cm[cm/Vs] |
|
1430 |
c-axis: 900 |
c-axis: 800 |
|
c-axis: 60 |
c-axis: 400 |
|
800 |
Hole Mobility
|
@ N=10cm[cm/Vs] |
|
480 |
115 |
90 |
40 |
Saturated Electron |
Velocity [10cm/s] |
|
1 |
2 |
2 |
2.5 |
Donors & Ionization |
Energy
[meV] |
|
|
|
|
N: 50 |
Acceptors & Ionization |
Energy
[meV] |
|
|
|
|
Al: 270 |
2003 Commercial |
Wafer Diameter [inches] |
|
12 |
3 |
3 |
|