It is observed experimentally that a shrinkage of the bandgap occurs when the impurity
concentration is particulary high. This effect is called the bandgap narrowing effect which is
ascribed to the emerging of the impurity band formed by the overlaped impurity states. In
devices containing adjecent layers or regions with different doping concentrations,
doping-induced shifting of the conduction band minimum and the valence band maximum may
greatly influence the device behavior. This is because the shifts in the band edges represent
a potential barrier which influences the carrier transport across the
junctions [119,120].
The bandgap narrowing and edge displacment effect has been modeled for Si based on
measurements of the quantity
in
npn-transistors [121,122]:
(3.72)
(3.73)
Calculated band edge displacement parameters for 4H- and 6H-SiC are listed in Table
3.4 [119]. Compared to Si, a larger
is expected
in n-type material for 4H- and 6H-SiC, respectively, whereas approximately the same
displacements are expected in p-type material for both polytypes.
Since Boltzmann statistics is not valid at high doping levels
cm, where the aforementioned interactions are not negligible, the
bandgap narrowing effects should be taken into account by an effective intrinsic carrier
concentration [123].
(3.74)
where
is a correcting factor introduced to Fermi statistics, given by
(3.75)
(3.76)
The effect of the bandgap narrowing on the intrinsic carrier concentration is shown in Fig. 3.8.
Table 3.4:
Calculated bandgap narrowing parameters in n- and p-type
-SiC.
C
[eV]
N
[cm]
C
[eV]
N
[cm ]
4H-SiC
6H-SiC
Figure 3.8:
Bandgap narrowing in -SiC as a function of doping
concentration, and its effect on the intrinsic carrier concentration.