SYMBOL | DESCRIPTION | UNIT |
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channel thickness | cm |
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effective Richardson constant | A![]() ![]() ![]() |
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heat capacity | J![]() ![]() |
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electron, hole Auger coefficient | cm![]() ![]() |
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electron, hole diffusivity | cm![]() ![]() |
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electric field | V![]() ![]() |
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breakdown/critical electric field | V![]() ![]() |
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acceptor, donor energy | eV |
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indirect bandgap | eV |
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exciton energy gap | eV |
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conduction, valence band energy | eV |
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Fermi energy | eV |
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electron, hole, trap energy | eV |
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intrinsic Fermi energy | eV |
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exciton binding energy | eV |
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acceptor, donor ionization energy | eV |
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frequency | Hz |
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cutoff frequency | Hz |
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maximum frequency | Hz |
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occupation probability of traps | 1 |
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generation rate | cm
![]() ![]() |
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electron, hole impact ionization coefficients | cm![]() |
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conductance | A![]() ![]() |
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acceptor, donor degeneracy factor | 1 |
SYMBOL | DESCRIPTION | UNIT |
![]() |
electric current density | A![]() ![]() |
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particle current density | cm![]() |
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thermal conductivity | W![]() ![]() ![]() |
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gate length | cm |
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electron, hole diffusion length | cm |
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electron, hole effective mass | kg |
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carrier mobility | cm![]() ![]() ![]() |
![]() |
low field carrier mobility | cm![]() ![]() ![]() |
![]() |
high field carrier mobility | cm![]() ![]() ![]() |
![]() |
undoped material carrier mobility | cm![]() ![]() ![]() |
![]() |
highly doped material carrier mobility | cm![]() ![]() ![]() |
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number of minima in the conduction and valence band | 1 |
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electron density | cm![]() |
![]() |
intrinsic density | cm![]() |
![]() |
Shockley-Read-Hall parameter | cm![]() |
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blocking layer doping concentration | cm![]() |
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acceptor, donor doping concentration | cm![]() |
![]() |
effective density of states | cm![]() |
![]() |
ionized donor concentration | cm![]() |
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ionized acceptor concentration | cm![]() |
![]() |
density of occupied traps | cm![]() |
![]() |
density of empty traps | cm![]() |
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doping concentrartion at (
![]() |
cm![]() |
![]() |
hole density | cm![]() |
![]() |
Shockley-Read-Hall parameter | cm![]() |
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elementary electric charge | A![]() |
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electron, hole quasi-Fermi potential | V |
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barrier height | V |
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metal work function | V |
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semiconductor work function | V |
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work function difference | V |
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electrostatic potential | eV |
![]() |
built-in potential | eV |
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relative dielectric constant | 1 |
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recombination rate | cm
![]() ![]() |
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specific on-resistance | V![]() ![]() ![]() |
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electrical conductivity | A![]() ![]() ![]() |
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resistivity | V![]() ![]() ![]() |
![]() |
charge density | A![]() ![]() ![]() |
![]() |
entropy density | eV![]() ![]() ![]() |
![]() |
electron, hole energy flux density | J![]() ![]() ![]() ![]() |
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temperature | K |
SYMBOL | DESCRIPTION | UNIT |
![]() |
electron, hole, and lattice temperature | K |
![]() |
reference temperature (300 K) | K |
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elctron, hole energy relaxation times | s |
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effective lifetime of recombination or generation process | s |
![]() |
effective electron, hole minority carrier lifetime | s |
![]() |
electron, hole minority carrier lifetime of impurity t![]() |
s |
![]() |
trap, acceptor, donor time constant | s |
![]() |
space charge generation lifetime | s |
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total energy density | eV![]() ![]() |
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substitute for electron or hole density | cm![]() |
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carrier velocity | cm![]() ![]() |
![]() |
electrons, holes, saturation velocity | cm![]() ![]() |
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constant specifying how velocity goes into saturation | 1 |
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breakdown voltage | V |
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built-in voltage | V |
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drain, gate, source voltage | V |
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threshold voltage | V |
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depletion region width | cm |
![]() |
gate width | cm |
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angular frequency | Hz |
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electron affinity | V |
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acceptor, donor ionization degree | 1 |
![]() |
constant measure how mobility changes from
![]() ![]() |
1 |
![]() |
constant temperature coefficient for
![]() |
1 |
![]() |
constant temperature coefficient for
![]() |
1 |
![]() |
phonon energy | eV |
T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation