[1] ABOU-ELNOUR, A., SCHUENEMANN, K.
A comparison between different numerical methods used to solve
Poisson's and Schroedinger's equations in semiconductor heterostructures
J. Appl. Phys., 74(5), 3273-3276, 1993
[2] ABOU-ELNOUR, A., SCHUENEMANN, K.
An efficient and accurate self-consistent calculation of electronic
states in modulation doped heterostructures
Solid-State Electr., 37(1), 27-30, 1994
[3] ADACHI, S.
GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research
and device applications
J. Appl. Phys., 58(3), R1-R29, 1985
[4] ADACHI, S.
Material parameters of In1-xGaxAsyP1-y and related binaries
J. Appl. Phys., 53(12), 8775-8792, 1982
[5] ADACHI, S. (Editor)
Properties of Aluminum Gallium Arsenide, INSPEC, London,
1993
[6] AINA, O., BURGESS, M., MATTINGLY, M., MEERSCHAERT, A., O'CONNOR,
J.M., TONG, M., KETTERSON, A., ADESIDA, I.
A 1.45-W/mm, 30-GHz InP-channel power HEMT
IEEE Electr. Dev. Lett., 13(5), 300-302, 1992
[7] AKAZAKI, T., ARAI, K., ENOKI, T., ISHII, Y
Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs
layer into the InGaAs channel
IEEE Electr. Dev. Lett., 13(6), 325-327, 1992
[8] ALAMKAN, J., HAPPY, H., CORDIER, Y., CAPPY, A.
Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent
approach
ETT, 1(4), 429-432, 1990
[9] ALI, F., GUPTA, A. (Eds.)
HEMTs & HBTs, Artech House, London, 1991
[10] AMBRAZEVICIUS, G., MARCINKEVICIUS, S., LIDEIKIS, T., NAUDZIUS,
K.
Influence of the surface electric field on carrier transfer into
InGaAs/GaAs single quantum wells
Semicond. Sci. Technol., 7, 818-821, 1992
[11] ANDERSSON, T.G., CHEN, Z.G., KULAKOVSKII, V.D., UDDIN, A.,
VALLIN, J.T.
Variation of the critical layer thickness with In content in strained
InxGa1-xAs-GaAs quantum wells grown by molecular beam epitaxy
Appl. Phys. Lett., 51(10), 752-754, 1987
[12] ANDO, Y., ITOH, T.
Analysis of charge control in pseudomorphic twodimensional electron
gas field-effect transistors
IEEE Trans. Electr. Dev., 35(12), 2295-2301, 1988
[13] ASCHER, U., MARKOVICH, P.A., SCHMEISER, C., STEINRÜCK,
H., WEISS, R.
Conditioning of the steady state semiconductor problem
SIAM J. Appl. Phys., 49(1), 165-185, 1989
[14] ASHCROFT, MERMIN
Solid-State Physics, Saunders College, Philadelphia, 1976
[15] ASHWORTH, J.M.
The physical mechanisms governing breakdown in GaAs MESFETs
Dissertation, Leeds, 1992
[16] BACCARANI, G., WORDEMANN, M.R.
An investigation of steady-state velocity overshoot in Silicon
Solid-State Electr., 28(4), 407-416, 1985
[17] BANK, R.E., ROSE, D.J.
Global approximate Newton methods
Numer. Math., 37, 279-295, 1981
[18] BARAFF, G.A.
Distribution functions and ionization rates for hot electrons
in semiconductors
Phys. Rev. 128, 2507-2517, 1962
[19] BHATTACHARYA, P. (Editor)
Properties of lattice-matched and strained Indium Gallium Arsenide,
INSPEC, London, 1993
[20] BOHMAYR, W., ET AL.
MINIMOS 6 User's Manual
Technische Universität Wien, Austria, 1994
[21] BRUM, J.A., BASTARD, G.
Self-consistent calculations of charge transfer and alloy scattering-limited
mobility in InP-Ga1-xInxAsyP1-y single quantum wells
Solid State Comm., 53(8), 727-730, 1985
[22] BULMAN, G.E., ROBBINS, V.M., STILLMAN, G.E.
The determination of impact ionization coefficients in (100) gallium
arsenide using avalanche noise and photocurrent multiplication
measurements
IEEE Trans. Electron. Dev., ED-32(11), 2454-2466, 1985
[23] BULMAN, G.E., ZIPPERIAN, T.E., DAWSON, L.R.
Impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer
superlattices
Appl. Phys. Lett., 49(4), 212-214, 1986
[24] CANALI, C., PACCAGNELLA, A., PISONI, P., TEDESCO, C., TELAROLI,
P., ZANONI, E.
Impact ionization phenomena in AlGaAs/GaAs HEMTs
IEEE Trans. Electron. Dev., 38(11), 2571-2573, 1991
[25] CAPPY, A.
Noise modeling and measurement techniques (invited paper)
IEEE Trans. Microw. Th. Techn., 36(1), 1-10, 1988
[26] CHADI, D. J. AND CHANG, K. J.
Theory of the atomic and electronic structure of DX centers in
GaAs and AlxGa1-xAs alloys
Phys. Rev. Lett. 61(7), 873-876, 1988
[27] CHAND, N., HENDERSON, T., KLEM, J., MASSELINK, W.T., FISCHER,
R., CHANG, Y.-C., MORKOÇ, H.
Comprehensive analysis of Si-doped AlxGa1-xAs (x = 0 to 1): theory
and experiments
Phys. Rev. B, 30(8), 4481-4492, 1984
[28] CHANDRA, A., FOISY, M.C.
Modeling of short-pulse threshold voltage shifts due to DX centers
in AlxGa1-xAs/GaAs AlxGa1-xAs/InyGa1-yAs and MODFETs
IEEE Trans. Electr. Dev., 38(6), 1238-1245, 1991
[29] CHAO, P.-C., SHUR, M.S., TIBERIO, R.C., DUH, K.H.G., SMITH,
P.M., BALLINGALL, J.M., HO, P., JABRA, A.A.
DC and microwave characteristics of sub-0.1-mm gate-length planar-doped
pseudomorphic HEMTs
IEEE Trans. Electr. Dev., 36(3), 461-472, 1989
[30] CHAU, H.-F., PAVLIDIS, D., TOMIZAWA, K.
Theoretical analysis of HEMT breakdown dependence on device design
parameters
IEEE Trans. Electr. Dev., 38(2), 213-221, 1991
[31] CHEN, C.-P., CHANG, Y.A., HUANG, J.-W., KUECH, T.F.
High Schottky barrier height of the Al/n-GaAs diodes achieved
by sputter deposition
Appl. Phys. Lett., 64(1), 1413-1415, 1994
[32] CHEN, Q., WILLANDER, M., NAROZNY, P., DÄNBKES, H.
Subthreshold current in submicron AlGaAs/GaAs MODFETs
Solid-State Electr., 35(10), 1493-1495, 1992
[33] CHENG, T.M., FENG, M.S., HWANG, H.L.
Analysis of electrical properties of delta-doped layers
SPIE, 1813, 158-163, 1992
[34] CHOW, P.C.
Computer Solutions to the Schroedinger Equation
Am. J. Phys., 40, 730-734, 1972
[35] COZ, P.L., GHEZZI, C., PARISINI, A.
Spatial correlations of DX charges and electron mobility in AlxGa1-xAs
Semicond. Sci. Technol., 8, 13-19, 1993
[36] DAVID, J.P.R., MARSLAND, J.S., ROBERTS, J.S.
The electron impact ionization rate and breakdownvoltage in GaAs/Ga0.7Al0.3As
MQW structures
IEEE Electr. Dev Lett., 10(7), 294-296, 1989
[37] DELAGEBEAUDEUF, D., LINH, N.T.
Metal(n) AlGaAs-GaAs two-dimensional electron gas FET
IEEE Trans. Electr. Dev., ED-29(6), 955-960, 1982
[38] DEUTSCHMANN, R., DORTU, J.-M.
Test of the quasi-2D simulation program HELENA
Siemensbericht KM5 - 258, 1992
[39] DHAR, S., HONG, W.-P., BHATTACHARYA, P.K., NASHIMOTO, Y.,
JUANG, F.Y.
A detailed investigation of the D-X center and other trap levels
in GaAs-AlxGa1-xAs modulation-doped heterostructures grown by
molecular-beam epitaxy
IEEE Trans. Electr. Dev., 33(5), 698-706, 1986
[40] DOLLFUS, P., BRU, C., HESTO, P.
Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron
mobility transistors: physical limitations at ultrashort gate
length
J. Appl. Phys., 73(2), 804-812, 1993
[41] DUVALL, S.G.
An interchange format for process and device simulation
IEEE Trans. CAD, CAD-7(7), 741-754, 1988
[42] EKENSTEDT, M.J., SONGPONGS, P., ANDERSSON, T.G.
Electron mobility and Si incorporation in InxGa1-xAs layers grown
on GaAs by molecular beam epitaxy
Appl. Phys. Lett., 61(7), 789-791, 1992
[43] ELLRODT, P., RADEFELD, A., BROCKERHOFF, W., TEGUDE, F.J.
Quasi two dimensional hydrodynamic modeling of InAlAs / InGaAs-
HFET including impact ionization
8th GaAs Simulation Workshop, Duisburg, 1994
[44] FASCHING, F., TUPPA, W., SELBERHERR, S.
VISTA - The data level
IEEE Trans. CAD, 13(1), 72-81, 1994
[45] FERNÁNDEZ, J.M., LAZZOUNI, M.E., SHAM, L.J., WIEDER,
H.H.
Electron distribution in pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As/GaAs
d-doped heterostructures
J. Appl. Phys., 74(2), 1161-1168, 1993
[46] FICHTNER, W., AEMMER, D. (Eds.)
Simulation of Semiconductor Devices and Processes Vol. 4,
Hartung-Gorre, Konstanz, 1991
[47] FISCHER, C.
Bauelementsimulation in einer computergestützten Entwurfsumgebung
Dissertation, Wien, 1994
[48] FISCHER, C., SALA, C., DEUTSCHMANN, R.
Eindimensionales Simulationsprogramm SPS (SCHRÖDINGER-POISSON-Solver)
[49] FOISY, M.C., TASKER, P.J., HUGHES, B., EASTMAN, L.F.
The role of inefficient charge modulation in limiting the current-gain
cutoff frequency of the MODFET
IEEE Trans. Electr. Dev., 35(7), 871-878, 1988
[50] FRANKS, R.B.
Dependence of ionization coefficients on well and barrier widths
for GaAs/AlGaAs multiple quantum wells
Solid-State Electr., 33(10), 1235-1245, 1990
[51] FU, S.-T., DAS, M.B.
Extraction of electronic transport parameters in submicrometer
gate-length MODFETs
IEEE Trans. Electr. Dev., 38(8), 1719-1729, 1991
[52] GRAVE, T.
Pseudomorphic HEMTs: Device physics and materials layer design
NATO Advanced Study Institute on PHEMT Technology and Applications,
Erice, Sicily, 1994
[53] GRUPEN, M., HESS, K., SONG, G.H.
Simulation of transport over heterojunctions
in [45], 303-311
[54] GRUZINSKIS, V., STARIKOV, E., SHIKTOROV, P.
Conservation equations for hot carriers - I. Transport models
Solid-State Electronics, 36(7), 1055-1066, 1993
[55] GRUZINSKIS, V., STARIKOV, E., SHIKTOROV, P.
Conservation equations for hot carriers - II. Dynamic features
Solid-State Electronics, 36(7), 1067-1075, 1993
[56] HALAMA, S., FASCHING, F., PIMINGSTORFER, H., TUPPA, W., SELBERHERR,
S.
Consistent user interface and task level architecture of a CAD
system
Proc. NUPAD IV, 237-242, 1992
[57] HALKIAS, G., VEGIRI, A., PANANAKAKIS, G., CHRISTOU, A.
Efficient charge control model for pseudomorphic and strained
high electron mobility transistors on GaAs and InP substrates
Solid-State Electronics, 35(4), 459-465, 1992
[58] HALL, R.N.
Electron-hole recombination in germanium
J. Appl. Phys, 387, 1952
[59] HAN, J., FERRY, D.K., NEWMAN, P.
Ultra-submicrometer-gate AlGaAs/GaAs HEMTs
IEEE Electr. Dev. Lett., 11(5), 209-211, 1990
[60] HAPPY, H., PRIBETICH, O., DAMBRINE, G., ALAMKAN, J., CORDIER,
Y., CAPPY, A.
HELENA: a new software for the design of MMICs
IEEE MTT-S Digest, OF-II-8, 627-630, 1991
[61] HAWKSWORTH, S.J., CHAMBERLAIN, J.M., CHENG, T.S., HENINI,
M., HEATH, M., DAVIES, M., PAGE, A.J.
Contact resistance to high-mobility AlGaAs/GaAs heterostructures
Semicond. Sci. Technol., 7, 1085-1090, 1992
[62] HESS, K., MORKOÇ, H., SHICHIJO, H., STREETMAN,
B.G.
Appl. Phys. Lett., 35, 469, 1979
[63] HIRAKAWA, K., SAKAKI, H.
Mobility of the two-dimensional electron gas at selectively doped
n-type AlxGa1-xAs/ GaAs heterojunctions with controlled electron
concentrations
Phys. Rev. B, 33(12), 8291-8303, 1986
[64] HIYAMIZU, S.
Recent developments in MBE GaAs/n-AlGaAs heterostructures and
HEMTs
2nd. Intern. Sympos. on MBE, Tokyo, 113-116, 1982
[65] HOUSSAYE, P.R. DE LA, ALLEE, D.R., PAO, Y.-C., SCHLOM, D.G.,
HARRIS, J.S., PEASE, R.F.W.
Electron saturation velocity variation in InGaAs and GaAs channel
MODFETs for gate lengths to 550 Å
IEEE Electr. Dev. Lett., 9(3), 148-150, 1988
[66] HSU, W.C., SHIEH, H.M.
A d-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor
prepared by-low pressure metalorganic chemical vapor deposition
Solid-State Electronics, 35(5), 635-638, 1992
[67] HUANG, J.C., SALEDAS, P., WENDLER, J., PLATZKER, A., BOULAIS,
W., SHANFIELD, S., HOKE, W., LYMAN. P., AUCOIN, L., MIQUELARENA,
A., BEDARD, C., ATWOOD, D.
A double-recessed Al0.24GaAs/In0.16GaAs pseudomorphic HEMT for
Ka- and Q-band power applications
IEEE Electr. Dev. Lett., 14(9), 456-458, 1993
[68] HUANG, J.C., ZAITLIN, M., HOKE, W., ADLERSTEIN, M., LYMAN,
P., SALEDAS, P., JACKSON, G., TONG, E., FLYNN, G.
A high-gain, low-noise, ½-mm pulse-doped pseudomorphic HEMT
IEEE Electr. Dev. Lett., 10(11), 511-513, 1989
[69] HWANG, J.C.M., FLAHIVE, P.G., WEMPLE, S.H.
Performance of power FETs fabricated on MBE-grown layers
IEEE Electr. Dev. Lett., EDL-3(10), 320-321, 1982
[70] IBACH, H., LÜTH, H.
Festkörperphysik, Springer, Berlin, 1990
[71] JACOBONI, C., LUGLI, P.
The Monte Carlo Method for Semiconductor Device Simulation,
Springer, Wien, 1989
[72] JACOBONI, C., REGGIANI, L.
The Monte Carlo method for the solution of charge transport in
semiconductors with applications to covalent materials
Rev. Mod. Phys., 55(3), 645-705, 1983
[73] JIA, Y.B., GRIMMEISS, H.G.
Electric field dependence of the emission properties of DX-related
centres in AlGaAs
Semicond. Sci. Technol., 9, 356-363, 1994
[74] KELLNER, W.A.
Mikroelektronik auf III-V-Halbleitern
Informationstechnik, 34(4), 220-228, 1992
[75] KHANNA, R., DAS, M.B.
Two-dimensional electron gas (2-DEG) interaction in a double-heterostructure
selectively contacted field-effect transistor
IEEE Electr. Dev. Lett., 14(4), 182-184, 1993
[76] KIZILYALLI, I.C., ARTAKI, M., CHANDRA, A.
Monte Carlo study of GaAs/AlxGa1-xAs/ MODFETs: effects of AlxGa1-xAs
composition
IEEE Trans. Electr. Dev., 38(2), 197-206, 1991
[77] KLITZING, K.V., DORDA, G., PEPPER, M.
Phys. Rev. Lett., 45, 494, 1980
[78] KRÖMER, H.,
Proc. IEEE, 51, 1782, 1963
[79] KUDO, M., MISHIMA, T., WASHIMA, M.
Electrical and optical properties of selectively doped Al0.25Ga0.75As/InyGa1-yAs
(0.25 y 0.45) pseudomorphic heterostructures grown by molecular-beam
epitaxy
Appl. Phys. Lett., 64(5), 628-630, 1994
[80] KURODA, S., IMANISHI, K., HARADA, N., HIKOSAKA, K., ABE,
M.
Highly uniform n-InAlAs/InGaAs HEMTs on a 3-in InP substrate using
photochemical selective dry recess etching
IEEE Electr. Dev. Lett., 13(2), 105-107, 1992
[81] LASKAR, J., BIGELOW, J.M., LEBURTON, J.-P., KOLODZEY, J.
Experimental and theoretical investigation of the DC and high-frequency
characteristics of the negative differential resistance in pseudomorphic
AlGaAs/InGaAs/GaAs MODFETs
IEEE Trans. Electr. Dev., 39(2), 257-263, 1992
[82] LEE, K., SHUR, M.S., DRUMMOND, T.J., MORKOÇ, H.
Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FETs and
MODFET characterization
IEEE Trans. Electr. Dev., 31(1), 29-35, 1984
[83] LI, X., LONGENBACH, K.F., WANG, Y., WANG, W.I.
High-breakdown-voltage AlSbAs/InAs n-channel field-effect transistors
IEEE Electr. Dev. Lett., 13(4), 192-194, 1992
[84] MATTHEWS, J.W., BLAKESLEE
J. Cryst. Growth, 27, 118, 1974
[85] MILLER, T.J., NATHAN, M.I.
Al/Si/AlGaAs/GaAs Schottky barriers by molecular beam epitaxy
Appl. Phys. Lett., 61(19), 2332-2334, 1992
[86] MIZUTA, H., YAMAGUCHI, K., YAMANE, M., TANOUE, T., TAKAHASHI,
S.
Two-dimensional numerical simulation of fermi-level pinning phenomena
due to DX centers in AlGaAs/GaAs HEMTs
IEEE Trans. Electr. Lett., 36(10), 2307-2314, 1989
[87] MOLL, N., HUESCHEN, M.R., FISCHER-COLBRIE, A.
Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
IEEE Trans. Electr. Dev., 35(7), 879-885, 1988
[88] MOLONEY, M.J., PONSE, F., MORKOÇ, H.
Gate capacitance-voltage characteristic of MODFETs: its effect
on transconductance
IEEE Trans. Electr. Dev., 32(9), 1675-1684, 1985
[89] MORKOÇ, H., UNLU, H., JI, G.
Priciples and Technology of MODFETs, John Wiley & Sons,
Cichester, 1991
[90] NGUYEN, L.D., BROWN, A.S., THOMPSON, M.A., JELLOIAN, L.M.
50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron
mobility transistors
IEEE Trans. Electr. Dev., 39(9), 2007-2014, 1992
[91] NGUYEN, L.D., BROWN, A.S., THOMPSON, M.A., JELLOIAN, L.M.,
LARSON, L.E., MATLOUBIAN, M.
650-Å self-aligned-gate pseudomorphic Al0.48In0.52As/Ga0.20In0.80As
high electron mobility transistors
IEEE Electr. Dev. Lett., 13(3), 143-145, 1992
[92] NGUYEN, L.D., LARSON, L.E., MISHRA, U.K.
Ultra-high-speed modulation-doped field-effect transistors: a
tutorial review
Proceedings of the IEEE, 80(4), 494-518, 1992
[93] NGUYEN, L.D., TASKER, P.J., RADULESCU, D.C., EASTMAN, L.F.
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs
(on GaAs) MODFETs
IEEE Trans. Electr. Dev., 36(10), 2243-2248, 1989
[94] PAO, Y.-C., HARRIS, J.S.
Low-conductance drain (LCD) design of InAlAs/InGaAs/InP HEMTs
IEEE Electr. Dev. Lett., 13(10), 535-537, 1992
[95] PARK, D.H., BRENNAN, K.F.
Monte Carlo simulation of a submicron pseudomorphic GaAlAs/InGaAs/GaAs
HEMT
SPIE 1144 - Indium phosphide and related materials for advanced
electronic and optical devices (Singh, R., Messik, L.J., eds.),
610-618, 1989
[96] PARK, D.H., BRENNAN, K.F.
Theoretical analysis of an Al0.15Ga0.85As/In0.15Ga0.85As pseudomorphic
HEMT using an ensemble Monte Carlo simulation
IEEE Trans. Electr. Dev., 36(7), 1254-1263, 1989
[97] PARK, D.H., WANG, Y., BRENNAN, K.F.
Ensemble Monte Carlo simulation of a 0.35-µm pseudomorphic
HEMT
IEEE Electr. Dev. Lett., 10(3), 107-110, 1989
[98] PATIL, M.B., RAVAIOLI, U., HUESCHENT, M.R.
Monte Carlo simulation of real-space transfer transistors: device
physics and scaling effects
IEEE Trans. Electr. Dev., 40(3), 480-486, 1993
[99] PEARSALL, T.P., CAPASSO, F., NAHORY, R.E., POLLAK, M.A.,
CHELIKOWSKY, J.R.
The band structure dependence of impact ionization by hot carriers
in semiconductors: GaAs
Solid-State Electron., 21, 297-302, 1978
[100] PIMINGSTORFER, H., HALAMA, S., SELBERHERR, S., WIMMER, K.,
VERHAS, P.
A Technology CAD shell
In [45], 409-416
[101] PLANA, R., ESCOTTE, L., LLOPIS, O., AMINE, H., PARRA, T.,
GAYRAL, M., GRAFFEUIL, J.
Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to
18 GHz
IEEE Trans. Electr. Dev., 40(5), 852-858, 1993
[102] PONSE, F., BERGER, O.
HEMT evaluation for space applications
ESA Electronic Components Conference, Nordwijk, 1993
[103] REN, F., PEARTON, S.J., ABERNATHY, C.R., WU, C.S., HU, M.,
PAO, C.-K., WANG, D.C., WEN, C.P.
0.25-mm pseudomorphic HEMTs processed with damage-free dry-etch
gate-recess technology
IEEE Trans. Electr. Dev., 39(12), 2701-2706, 1992
[104] REVVA, P., LANGER, J.M., MISSOUS, M., PEAKER, A.R.
Temperature dependence of the Schottky barrier in Al/AlGaAs metal-semiconductor
junctions
J. Appl. Phys., 74(1), 416-425, 1993
[105] ROBBINS, V.M., SMITH, S.C., STILLMAN, G.E.
Impact ionization In AlxGa1-xAs for x = 0.1 - 0.4
Appl. Phys. Lett., 52(4), 296-298, 1988
[106] ROSENBAUM, S.E., LITVIN, K., CHOU, C.S., LARSON, L.E., NGUYEN,
L.D., NGO, C., LUI, M., HENIGE, J., THOMPSON, M.A., MISHRA, U.,
PIERSON, D.
AlInAs/GaInAs on InP HEMT low noise MMIC amplifiers
IEEE MTT-S Digest, Y1, 815-817, 1991
[107] SAKAKI, H., NODA, T., HIRAKAWA, K., TANAKA, M., MATSUSUE,
T.
Interface roughness scattering in GaAs/AlAs quantum wells
Appl. Phys. Lett., 51(23), 1934-1936, 1987
[108] SALMER, G.
Physical simulation tools for MODFETs: Recent results and trends
Euroform Seminar "III-V and Silicon for high speed microelectronics",
Ulm, 1993
[109] SCHNELL, R.D., RIECHERT, H., SCHLEICHER, L.
Erste selbstjustierte HEMT mit pseudomorphen InGaAs-Quantum-Well
Kanälen
Siemensbericht KM 5 - 254, 1992
[110] SCHNELL, R.D., SCHLEICHER, L.
Ein produktionstauglicher, selbstjustierender Prozeß für
rauscharme HEMT
Siemensbericht KM 5 - 240, 1992
[111] SCHUBERT, E.F., FISCHER, A., PLOOG, K.
The delta-doped field-effect transistor (dFET)
IEEE Trans. Electr. Dev., 33(5), 625-632, 1986
[112] SCHUBERT, E.F., PLOOG, K.
Shallow and deep donors in direct-gap n-type AlxGa1-xAs:Si grown
by molecular-beam epitaxy, Phys. Rev. B, 30(12), 7021-7029, 1984
[113] SELBERHERR ET AL.
VISTA Users Manual, Volume T3/U: MINIMOS 6.0
Institut für Mikroelektronik, TU Wien, 1994
[114] SELBERHERR, S.
Analysis and simulation of semiconductor devices
Springer, 1984
[115] SELBERHERR, S., HÄNSCH, W., SEAVY, M., SLOTBOOM, J.
The evolution of the MINIMOS mobility model
AEÜ, 44(3), 161-172, 1990
[116] SELBERHERR, S., KOSINA, H.
Simulation of nanometer MOS-devices with MINIMOS
Proc. VPAD, 2-5, 1990
[117] SELBERHERR, S., SCHÜTZ, A., PÖTZ, H.W.
MINIMOS - a two-dimensional MOS transistor analyzer
IEEE Electr. Dev., ED-27, 1540-1550, 1980
[118] SHIEH, H.M., HSU, W.C., WU, C.L.
Improved GaAs(In0.25Ga0.75As/GaAs pseudomorphic heterostructure
by growing double d-doping GaAs layers on both sides of the channel
Solid-State Electr., 36(9), 1235-1237, 1993
[119] SHOCKLEY, W., READ, W.T., JR.
Statistics of the recombination of holes and electrons
Phys. Rev, 87(5), 835-842, 1952
[120] SIWERIS, H.J., GRAVE, TH., SCHLEICHER, L.
A monolithic HEMT distributed amplifier using a low cost spacer
technology
GAAS, Turin, 1994
[121] SOUSSI, K., ODEH, F., TANG, H.H.K., GNUDI, A., LU, P.F.
Investigation of the impact ionization in the hydrodynamic model
IEEE Trans. Electr. Dev, 40(8), 1501-1507, 1993
[122] STÖRMER, H.L., DINGLE, R., GOSSARD, A.C., WIEGMANN,
W., STURGE, M.D.
Solid State Commun., 29, 705, 1979
[123] STRINGFELLOW, G.B.
Electron mobility in AlxGa1-xAs
J. Appl. Phys., 50(6), 4178-4183, 1979
[124] STRINGFELLOW, G.B., KÜNZEL, H.
Electron mobility in compensated GaAs and AlxGa1-xAs
J. Appl. Phys., 51(6), 3254-3261, 1980
[125] SUBRAMANIAN, S., VENGURLEKAR, A.S., DIWAN, A.A.
Effect of shallow and deep donors on the equilibrium electron
density of the two-dimensional electron gas in a modulation-doped
field-effect transistor
IEEE Trans. Electr. Dev., 33(5), 707-711, 1986
[126] SUTHERLAND, A.D.
An improved empirical fit to Baraff's universal curves for the
ionization coefficients of electron and hole multiplication in
semiconductors
IEEE Trans. Electr. Dev., ED-27(7), 1299-1300, 1980
[127] TAKIKAWA, M., JOSHIN, K.
Pseudomorphic N-InGaP/InGaAs/GaAs high electron mobility transistor
for low-noise amplifiers
IEEE Electr. Dev. Lett., 14(8), 406-408, 1993
[128] TANG, J.Y.-F., FREEOUF, J.L.
Nonuniform surface potentials and their observation by surface
sensitive techniques
J. Vac. Sci Technol. B2(3), 459-464, 1984
[129] TEDESCO, C., CANALI, C., MANFREDI, M., NEVIANI, A., ZANONI,
E.
Hot electron induced light emission and impact ionization in GaAs
based devices
SPIE Vol. 1985, 208-219
[130] TEDESCO, C., ZANONI, E., CANALI, C., BIGLIARDI, S., MANFREDI,
M., STREIT, D.C., ANDERSON, W.T.
Impact ionization and light emission in high-power pseudomorphic
AlGaAs/InGaAs HEMTs
IEEE Trans. Electr. Dev., 40(7), 1211-1214, 1993
[131] THOMPSON, M.A., JELLOIAN, L.M., NGUYEN, L.D., MISHRA, U.K.
High aspect ratio asymmetric gate structures employed in novel
self-aligned high electron mobility transistor technology
J. Vac. Sci. Technol. B, 8(6), 1339-1342, 1990
[132] TIAN, H., KIM, K.W., LITTLEJOHN, M.A.
Influence of DX centers and surface states on d-doped high-electron-mobility
transistor performance
J. Appl. Phys., 69(7), 4123-4128, 1991
[133] TONG, M., NUMMILA, K., KETTERSON, A., ADESIDA, I., CANEAU,
C., BHAT, R.
InAlAs/InGaAs/InP MODFETs with uniform threshold voltage obtained
by selective wet gate recess
IEEE Electr. Dev. Lett., 13(10), 525-527, 1992
[134] TROTT, S., NAKOV, V., GOBSCH, G., GOLDHAHN, R.
Modelling of the electronic structure for an AlGaAs/GaAs/AlGaAs
HFET with a -doping layer inside the quantum well
Solid-State Electronics, 36(6), 851-856, 1993
[135] TSUI, D.C., GOSSARD, A.C.
Resistance standard using quantization of Hall Resistance of GaAs-AlxGa1-xAs
heterostructures
Appl. Phys. Lett., 38(7), 550-552, 1981
[136] VORST, H.A. VAN DER
BI-CGSTAB: A fast and smoothly converging variant of BI-CG for
the solution of nonsymmetric linear systems
SIAM J. Sci. Stat. Comput., 13(2), 631-644, 1992
[137] WANG, T., HESS, K.
Calculation of the electron velocity distribution in high electron
mobility transistors using an ensemble Monte Carlo method
J. Appl. Phys., 57(12), 5336-5339, 1985
[138] YU, P.W., REYNOLDS, D.C., JOGAI, B., LOEHR, J., STUTZ, C.E.
High valence-band offset of GaSbAs-InAlAs quantum wells grown
by molecular beam epitaxy
Appl. Phys. Lett., 61(19), 2317-2319, 1992
[139] ZANDLER, G., DI CARLO, A., KOMETER, K., LUGLI, P. VOGL,
P., GORNIK, E.
A comparison of Monte Carlo and Cellular Automata approaches for
semiconductor device simulation
IEEE Electr. Dev. Lett., 14(2), 77-79, 1993
[140] ZANONI, E., MANFREDI, M., BIGLIARDI, S., PACCAGNELLA, A.,
PISONI, P., TEDESCO, C., CANALI, C.
Impact ionization and light emission in AlGaAs/GaAs HEMTs
IEEE Trans. Electr. Dev., 39(8), 1849-1857, 1992
[141] ZANONI, E., PACCAGNELLA, A., PISONI, P.,TELAROLI, P., TEDESCO,
C., CANALI, C.
Impact ionization, recombination, and visible light emission in
AlGaAs/GaAs high electron mobility transistors
J. Appl. Phys., 70(1), 529-531, 1991
[142] ZHAO, K., KUHN, K.J.
Dislocation scattering in n-type modulation doped Al0.3Ga0.7As/InxGa1-xAs/
Al0.3Ga0.7As quantum wells
IEEE Trans. Electr. Dev., 38(12), 2582-2589, 1991
[143] ZHAO, Y., TSUI, C., CHAO, P.C.
Electron transport in 0.15-mm gate In0.25Al0.48As/In0.53Ga0.47As
HEMT
IEEE Trans. Electr. Dev., 40(6), 1067-1070, 1993
[144] ZIMMER, T., BODI, D.O., DUMAS, J.M., LABAT, N., TOUBOUL,
A., DANTO, Y.
Kink effect in HEMT structures: a trap-related semi-quantitative
model and an empirical approach for SPICE simulation
Solid-State Electr., 35(10), 1543-1548, 1992