This work continues the work at the Institute for Microelectronics at the Vienna University of Technology on the simulation of semiconductor processes which alter the topography, such as etching and deposition processes. The first topography simulator developed at the institute by Strasser [122,123] and Pyka [93] uses a structuring element algorithm. A better approach is the level set (LS) method [86], which has been implemented by Heitzinger within the ELSA framework [40]. Sheikholeslami extended this framework to three dimensions and used it for the Topo3D simulator [111]. Due to a poor scaling behavior with problem size, Topo3D reaches its computational limits easily, when calculating the particle transport for advanced physical models on larger structures. Furthermore, it is not able to describe etching processes on structures with multiple materials. The goal of this work was to investigate, improve, and develop algorithms which are convenient to overcome the shortcomings of previous topography simulators.