Next: 3.3.1 Homogeneous Semiconductor
Up: 3. Device Equations
Previous: 3.2.5 Low-Field Mobility Reconsidered
The above models were implemented in MINIMOS-NT and several simulations were carried
out to confirm the theoretical results and the validity of the simplifying
assumptions.
Figure 3.8:
a) Geometry of the homogeneous doped semiconductor. b) Geometry of Gummel's pentagon.
|
Tibor Grasser
1999-05-31