List of Figures

• Data flow in mainstream Technology CAD
• Source code size of VISTA. The dark gray shaded area denotes the amount of manually created coded, the light gray area stands for automatically created code. Bold lines indicate actually measured values, all other values are based on estimations.
• Integrated system without task and data level
• Integrated system with explicit task and data level
• Early integrated TCAD
• Impact of an application-framework architecture on the engineering situation.
• Simplified structure of VISTA
• The VISTA tool abstraction concept
• Structure of the PIF application interface
• Simplified structure of the VISTA user interface. Shaded boxes represent VISTA's extensions to the public domain products XLISP and the X Window System.
• Control and data flow during callback registration and execution
• The class tree of the widgets used by VISTA. The VISTA widgets are shaded, the Intrinsics and Athena widgets used for sub-classing are blank.
• Collection of Athena and VISTA widgets
• The PIF EDitor (PED) Widget
• The Simple Vector Graphics (SVG) widget
• The VISTA file selection widget
• The periodic table widget macro is a building block for the selection of chemical elements.
• The symbolic PIF browser
• This widget macro is the tool control panel for the PROMIS Monte Carlo ion implantation module.
• A set of physical applications is mapped to a set of virtual applications on the task level. The user interface for these virtual applications is implemented in the task level programming environment, leaving the physical applications entirely unaffected.
• The LISP read-eval-print loop
• The X Toolkit event loop
• The combined LISP and X Toolkit loop
• The VISTA main shell
• A 3-simplex (a tetrahedron) consists of four 2-simplexes (triangles), six 1-simplexes (lines), and four 0-simplexes (points).
• Simplified arrangement of VVF structures for a set of two-dimensional simplexes.
• A two-simplex (triangle) and the decomposition of using local coordinates
• Flowline vortex
• A ray passing through the simplexes
• Tetrahedral simplex set used for volume rendering
• Volume-rendered image of the doping concentration in a three-dimensional trench structure
• Screen dump of xpif2d
• Grid point cloud
• Delaunay graph for the grid point cloud
• Voronoi graph for the grid point cloud
• Transcript of a VORONOI run for a 200 point self-test example
• Modules and data flow within VORONOI. The shaded area represents the present status of VORONOI, other modules are planned extensions.
• The Delaunay graph (solid lines) and Voronoi graph (dotted lines) are stored in two Dual Doubly Connected Edge Lists.
• Subdivision scheme of a region quadtree
• Geometrical view of a bucket point region quadtree used for the location of Delaunay grid points.
• Data structure of a region quadtree used for the location of Delaunay grid points.
• The insertion of point exceeds the level 1 bucket capacity.
• After the first refinement, the insertion of point exceeds the level 2 bucket capacity.
• Successful insertion of into a level 3 bucket without further refinement.
• The Delaunay triangulation of this configuration of boundary points A, B, C, and grid point P yields a non-geometry-conforming grid.
• A simple example of a layered geometry which, without boundary refinement, causes a non-geometry-conforming triangulation
• Non-geometry-conforming triangulation of a tensor product grid
• All grid points lie outside the smallest circle passing through A and B, hence the edge is a Delaunay edge.
• Proof of the boundary refinement criterion
• Boundary grid point insertion by orthogonal projection
• Boundary grid point insertion by azimuthal projection
• The interface edge and its selected quadtree buckets.
• Voronoi and Delaunay graphs for the trivial cases of 0, 1, 2, and 3 grid points
• Left and right subgraphs before merge
• Merged left and right subgraphs
• Iterative method for the direct construction of the Delaunay graph
• Non-geometry-conform tensor product grid defined on a non-planar geometry
• Multi-segment triangular grid generated with Trigen
• Merged triangulated grid created by VORONOI for the Silicon segment
• Merged triangulated grid created by VORONOI for the oxide segment
• Doping profile interpolated onto the coarse triangular grid.
• The solution of the Laplace equation
• The solution of the biharmonic equation
• CPU time (in seconds) of the gridding process as a function of the number of triangles generated. Boundary refinement (Steps 4 and 5), sole triangulation (Step 6) and total CPU time (including PIF input and output).
• The geometry of the VISTA logo
• Delaunay triangulation of the VISTA logo before the grid segmentation step
• Final boundary-boundary triangulation of the VISTA logo
• Boundary-boundary triangulation of Austria without Vienna
• The PIF editor showing a detail of a resist mask edge geometry which has been re-triangulated by VORONOI
• The multiply connected geometry of Austria without Vienna, bearing a triangular grid which was generated by VORONOI
• Application of VORONOI to the complex singly connected geometry of the VISTA logo. Attribute values have only been defined on the three inner grid points , , . All other grid points are boundary points with interpolated values.
• Initial device structure with mask for isolation trench definition
• Device structure after isolation trench etching and mask removal
• Device structure after isotropic oxide deposition (CVD)
• Device structure after resist spin-on for planarization
• Planarized device structure after back-etching of resist and oxide. Isolation of device regions is provided by three oxide-filled shallow trenches.
• Device structure after p-well and n-well implantation
• Device structure with mask for gate trench etching
• Device structure after gate etch step and mask removal
• Device structure with deposited polysilicon gates after planarization
• Final CMOS structure after junction formation
• N-well doping profile (Phosphorus) after ion implantation, simulated with the PROMIS Monte Carlo ion implantation module. Result of step 13.
• P-well doping profile (Boron) after ion implantation, simulated with the PROMIS Monte Carlo ion implantation module. Result of step 18.
• N-well doping profile after drive-in diffusion, simulated with TSUPREM-4. Result of step 20
• P-well doping profile after drive-in diffusion, simulated with TSUPREM-4. Result of step 20
• N-well doping profile after etching the trench for the planarized poly gate. Result of step 24
• xpif2d showing a detail of the n-well and a nearby passing gate structure. Result of step 28
• PED showing the entire CMOS structure with the grid on the silicon segment, triangulated by VORONOI. Result of step 31
• Source and drain profiles of the nMOS transistor after the Monte Carlo simulation of ion implantation. Result of step 38.
• Supported hardware platforms and operating systems.
• Module definition file for the application VORONOI (unabridged)
• LISP code which is required to integrate the external executable VORONOI as a virtual tool on the task level