CFL | Courant-Friedrichs-Levy |
CMOS | Complementary Metal Oxide Semiconductor |
CVD | Chemical Vapor Deposition |
DIRECT | Dividing Rectangles |
DNA | Deoxyribonucleic Acid |
DOE | Design of Experiments |
DRAM | Dynamic Random Access Memory |
EGO | Extensible Genetic Optimizer |
ELSA | Enhanced Level Set Applications |
HDP | High Density Plasma |
HPCVD | High Pressure Chemical Vapor Deposition |
ILD | Interlevel Dielectric |
LPCVD | Low Pressure Chemical Vapor Deposition |
MOS | Metal Oxide Semiconductor |
MOSFET | Metal Oxide Semiconductor Field Effect Transistor |
PDE | Partial Differential Equation |
PECVD | Plasma Enhanced Chemical Vapor Deposition |
PIF | Profile Interchange Format |
PVD | Physical Vapor Deposition |
RSM | Response Surface Methodology |
SEM | Scanning Electron Microscope |
SIA | Semiconductor Industry Association |
SIESTA | Simulation Environment for Semiconductor Technology Analysis |
SIMS | Secondary Ion Mass Spectrometry |
SRAM | Static Random Access Memory |
RTA | Rapid Thermal Annealing |
TCAD | Technology Computer Aided Design |
TED | Transient Enhanced Diffusion |
TEOS | Tetraethoxysilane, |
ULSI | Ultra Large Scale Integration |
VISTA | Viennese Integrated System for TCAD Applications |
VLSI | Very Large Scale Integration |
Clemens Heitzinger 2003-05-08