12.1 Introduction

The topic of this chapter is the topography simulation of single features. The deposition of layers into silicon trenches is simulated, where the surface is evolved using the level set algorithm described in Section 13.6. After an overview of topography simulations the transport of particles above the wafer is modeled. Then we discuss the surface reaction mechanism of the deposition silicon dioxide films from TEOS (tetraethoxysilane, $\mathrm{Si(OC_2H_5)_4}$) and of silicon nitride films.

In the last sections the deposition of silicon dioxide and silicon nitride films is simulated at the example of trenches fabricated for power MOSFET s and memory cells. The simulations are compared to SEM images provided by industrial partners.