In the oxidation process, oxygen or
molecules are used to convert
silicon on the surface of the wafer in silicon dioxide. Although this
reaction exists at room temperatures, the oxidation rate is increased
at elevated temperatures. Other factors that influence the oxidation rate
are the pressure inside the furnace and silicon properties (as doping
levels, contamination, ...). Thermal oxide has also good mechanical
properties and a good sticking coefficient with the underlying
silicon, making it one of the most important materials in integrated
circuits.