In order to compute the BV, it is necessary to determine the condition under which the impact ionization achieves an infinite rate. Generation of electron-hole pairs due to impact ionization requires a certain threshold energy (approximately 3.6eV for electrons and 5.0eV for holes in silicon) and the possibility of acceleration of the energy of electrons and holes, i.e. wide space charge regions. If the width of the space charge region is larger than the mean free path of carriers, charge multiplication occurs, which can cause electrical breakdown.
Consider a reverse-biased parallel-plane -junction with a positive bias
applied to the
-region (see Figure 3.5) .
Under the influence of the electric field
in the depletion region, the electron will be swept towards the
-region
and the hole will be swept towards the
region.
Using the definitions for the ionization coefficients, the hole will create
electron-hole pairs after traveling a distance
and the electron will create
electron-hole
pairs. The total number of electron-hole pairs
created in the
depletion region by a single electron-hole pair generated at a distance
is given by
![]() |
(3.26) |
where is the depletion layer width. The integrations
are performed along field lines through the depletion region.
A solution of this integral equation is
![]() |
(3.27) |
is commonly known as the multiplication coefficient.
The breakdown voltage is defined as the voltage at which
reaches infinity. It occurs if the following integral equals one
![]() |
(3.28) |
where the left-hand side of (3.28) is known as the ionization integral. With the approximation given in (3.25) the avalanche breakdown condition corresponds to
![]() |
(3.29) |
Jong-Mun Park 2004-10-28