Own Publications

K1

J.M. Park, R. Klima, S. Selberherr, ``High-Voltage Lateral Trench Gate SOI-LDMOSFETs,'' in Microelectronics Journal, Vol. 35, No. 3, pp. 299-304, 2004.

K2

J.M. Park, S. Wagner, T. Grasser, S. Selberherr, ``New SOI Lateral Power Devices with Trench Oxide,'' in Solid-State Electronics, Vol. 48, No. 6, pp. 1007-1015, 2004.

K3

J.M. Park, T. Grasser, H. Kosina, and S. Selberherr, ``A Numerical Study of Partial-SOI LDMOSFETs,'' in Solid-State Electronics, Vol. 47, No. 2, pp. 275-281, 2003.

K4

T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr, ``Improving SiC Lateral DMOSFET Reliability under High Field Stress,'' in Microelectronics Reliability, Vol. 43, Vol. 9-11, pp. 1889-1894, 2003.

K5

T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr, ``Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET,'' in Proc. European Solid-State Device Research Conf., pp. 581-584, 2003.

K6

C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr, ``A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET,'' in Proc. European Solid-State Device Research Conf., pp. 457-460, 2003.

K7

T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr, ``Modeling and Simulation of SiC MOSFETs,'' in Intl. Conf. on Applied Modelling and Simulation, pp. 552-556, 2003.

K8

J.M. Park, T. Grasser, and S. Selberherr, ``High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length,'' in Proc. of the Eleventh Intl. Symp. on Silicon-On-Insulator Technology and Devices, pp. 273-282, 2003.

K9

J.M. Park, R. Klima, and S. Selberherr, ``Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance,'' in Proc. European Solid-State Device Research Conf., pp. 283-286, 2002.

K10

J.M. Park, R. Klima, and S. Selberherr, ``High-Voltage Lateral Trench Gate SOI LDMOSFETs,'' in Proc. Intl. Seminar on Power Semiconductors, pp. 241-244, 2002.

K11

J.M. Park, T. Grasser, H. Kosina, and S. Selberherr, ``Numerical Study of Partial-SOI LDMOSFET Power Devices,'' in Proc. Intl. Semiconductor Device Research Symposium, pp. 114-117, 2001.