5.4.3 Technology C: Pseudomorphic HEMT on GaAs

Technology C is based on multi layer resist electron (e-) beam lithography for gate definition. An ICP dry etch process defines the gate recess. The HEMT examples were processed on 3 and 4 inch GaAs wafers. Typical gate lengths are ${\it l}_{\mathrm{g}}$= 150 nm using a Ti/Pt/Au gate metal. An implant isolation renders the process planar.