The main goal of this thesis is to enhance MINIMOS-NT, a general purpose device simulator, to simulate the electro-magnetic performance of a split-drain MAGFET operated at 300 K and 77 K. For this purpose, full three-dimensional numerical simulations must be carried out. In Chapter 2 the magnetic effects in semiconductors are described, showing the equations that must be solved for the simulation of magnetic effects in semiconductors. Details of the implementation in MINIMOS-NT will be shown in Chapter 3, along with the discretization scheme for computing the vectorial product between current density and magnetic field. Chapter 4 presents results of a two-drain MAGFET at 300 K and 77 K. Chapter 5 gives results of a three-drain MAGFET at 300 K and 77 K, and finally some conclusions are drawn in Chapter 6.
Rodrigo Torres 2003-03-26