4.5 Conclusions

Full three-dimensional device simulations of a two-drain MAGFET taking into account a magnetic field have been carried out. A perfect match between simulation results and experimental data is obtained at room temperature and liquid Nitrogen temperature. Although the value of the Hall scattering factor for the electrons seems to be a little lower at 300 K in comparison to those values found in the literature, the simulation results show that the electric performance of the two-drain MAGFET with the magnetic field have a meaningful behavior as one would expect from basic physics.

The improvement of the relative sensitivity of the two-drain MAGFET at 77 K with both experimental data and simulation results has been shown. Despite the simulation results at 77 K with no magnetic field are not as good as those at 300 K, the increase in the differential current at 77 K has been reproduced. The simulation results of the electric performance of the two-drain MAGFET with magnetic field at 77 K have been explained using basic physics concepts, specially MOSFET physics.

The geometric dependence of the relative sensitivity has been shown at both 300 K and 77 K. Whereas only little improvement of the relative sensitivity at 300 K is obtained, a significant improvement of the relative sensitivity of the two-drain MAGFET at 77 K is obtained.