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The proposed method for unified treatment of interface conditions is very
useful for simulation of generic semiconductor devices and is an elegant way to
handle bias dependent interface condition types. Furthermore, no distinction
has to be made between heterojunction interfaces and interfaces where regions
with identical material properties are joined. By transforming the equations
describing the interface conditions the strong influence of the internal state
of the device on the spectral condition of the equation system can be
reduced and convergence is improved.
Martin Rottinger
1999-05-31