![]() |
... | right hand side vector |
![]() |
... | part of the right hand side vector containing entries from the boundaries |
![]() |
... | part of the right hand side vector containing entries from the segments |
dij | ... | distance of grid points i and j |
dn | ... | width of the space charge region on the n-doped side |
dp | ... | width of the space charge region on the p-doped side |
eb | ... | effective barrier height |
![]() |
... | Boltzmann constant |
l | ... | lateral coordinate |
m | ... | carrier mass |
n | ... | electron concentration |
![]() |
... | perpendicular vector |
ni | ... | intrinsic carrier concentration |
ninj | ... | injection rate of primary electrons |
nsec | ... | generation rate of secondary electrons |
p | ... | hole concentration |
psec | ... | generation rate of secondary holes |
q | ... | elementary charge |
t | ... | time |
tn | ... | time for simulation step n |
![]() |
... | time step size of step n |
![]() ![]() |
... | estimated time step size |
u | ... | scalar quantity |
v | ... | thermionic emission velocity vertical coordinate |
w | ... | barrier width |
x | ... | spatial coordinate |
![]() |
... | vector of unknowns |
z | ... | spatial coordinate |
A* | ... | Richardson constant |
![]() |
... | system matrix |
![]() |
... | part of system matrix containing entries from the boundaries |
![]() |
... | part of system matrix containing entries from the segments |
AC | ... | alternating current |
C | ... | integration constant |
DC | ... | direct current |
Dij | ... | diffusion constant between grid points i and j |
Dn | ... | diffusion constant of electrons |
Dp | ... | diffusion constant of holes |
E | ... | electric field |
E![]() |
... | electric field perpendicular to interface |
![]() |
... | difference of conduction band edge energies |
![]() |
... | band gap energy |
Eprim | ... | energy of the primary electrons |
E![]() |
... | discretization error for step size ![]() |
G | ... | generation rate |
J | ... | current density |
J![]() |
... | current density perpendicular to interface |
JG | ... | current density caused by generation of carriers |
Jij | ... | current density between grid points i and j |
Jinj | ... | current density of injected primary electrons |
Jninj | ... | electron current density caused by injection of electrons |
Jpinj | ... | hole current density caused by injection of electrons |
Ln | ... | minority diffusion length of electrons |
Lp | ... | minority diffusion length of holes |
LD | ... | Debye length |
NA | ... | acceptor concentration |
NC | ... | effective density of states for the conduction band |
ND | ... | donor concentration |
NV | ... | effective density of states for the valence band |
S![]() |
... | energy flux density |
T | ... | temperature |
T![]() |
... | carrier temperature |
![]() |
... | transformation matrix |
VS | ... | surface band bending |
VSCV | ... | surface cathodo voltage |
VSPV | ... | surface photo voltage |
![]() |
... | vacuum permittivity |
![]() |
... | relative permittivity |
![]() |
... | spectral condition number |
![]() |
... | eigenvalue |
![]() |
... | lateral position of the center of the primary electron beam |
![]() |
... | mobility of electrons |
![]() |
... | mobility of holes |
![]() |
... | vertical distance of the center of the primary electron beam from the semiconductor surface |
![]() |
... | spatial coordinate |
![]() |
... | electrostatic potential |
![]() |
... | potential measured by the AVC method |
![]() |
... | built-in potential |
![]() |
... | charge density caused by the doping |
![]() |
... | charge density caused by injection of electrons |
![]() |
... | charge density caused by injection of electrons for uniform doping |
![]() |
... | lateral standard deviation |
![]() |
... | vertical standard deviation |
![]() |
... | surface charge density |
![]() |
... | minority carrier lifetime of electrons |
![]() |
... | minority carrier lifetime of holes |