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5.1 Low Field Electron Mobility in Undoped Layers
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5.1 Low Field Electron Mobility in Undoped Layers
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5.1.1.1 Ge Composition Dependence of Perpendicular and In-plane
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Si layers on
substrates
First electron transport in a pure Si strained layer is considered. In this case alloy scattering has no influence.
Subsections
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1
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Ge Composition Dependence of Perpendicular and In-plane Components
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Substrate Orientation Dependence
 
Previous:
5.1 Low Field Electron Mobility in Undoped Layers
Up:
5.1 Low Field Electron Mobility in Undoped Layers
Next:
5.1.1.1 Ge Composition Dependence of Perpendicular and In-plane
S. Smirnov: