School of physics and mathematics at Moscow State Institute of Electronic Technology
(Technical University) (MIET (TU)).
September 1993
Enrolled as a student of MIET (TU) at the faculty of physics and technology.
June 1997
Received B.S. degree (with honors) from MIET (TU) in electronics and microelectronics.
June 1999
Received M.S. degree (with honors) from MIET (TU) in electronics and microelectronics.
October 1999 - December 2001
Research fellow at MIET (TU): numerical simulation of semiconductor devices.
January 2002
Entered doctoral program at the Institute for Microelectronics, Vienna, under the supervision
of Prof. Dr. Hans Kosina and Prof. Dr. Siegfried Selberherr. Subject of the PhD study:
"Physical Modeling of Electron Transport in Strained Silicon and Silicon-Germanium". The research project has been carried out in cooperation
with Intel Corporation and Semiconductor Research Corporation (SRC).