previous up next Dissertation Sergey Smirnov contents
 Previous: 3.1.3.1 Modulation-Doped FET   Up: 3.1.3 Strained Layers in Semiconductor Devices   Next: 3.2 Linear Deformation-Potential Theory

3.1.3.2 Strained MOSFET

The strained Si layer is also used as the channel in the usual n-MOSFET structure where, it is grown on a SiGe substrate. The in-plane electron mobility increase is used to improve the device performance.

previous up next   contents
 Previous: 3.1.3.1 Modulation-Doped FET   Up: 3.1.3 Strained Layers in Semiconductor Devices   Next: 3.2 Linear Deformation-Potential Theory
S. Smirnov: