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3.4.1 Hydrostatic Strain
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3.4 Band Structure of Strained SiGe layers
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3.4.2.1 Splitting of the X Valleys
3
.
4
.
2
Uniaxial Strain
The splitting of equivalent valleys is given by the difference of (
3.30
) and (
3.31
) and depends on both valley type and substrate orientation.
Subsections
3
.
4
.
2
.
1
Splitting of the X Valleys
3
.
4
.
2
.
2
Splitting of the L Valleys
 
Previous:
3.4.1 Hydrostatic Strain
Up:
3.4 Band Structure of Strained SiGe layers
Next:
3.4.2.1 Splitting of the X Valleys
S. Smirnov: