Next: 3.3.1 WCC of Long-Channel Devices Up: 3. Defect Creation Previous: 3.2 Secondary Generated Carriers

3.3 Analysis of Worst-Case HCD Conditions in the Case of n- and p-channel MOSFETs

Although the experimental worst-case conditions (WCC) was determined some time ago, a detailed numerical analysis of the matter is still missing. This is related to the lack of a comprehensive model for hot-carrier degradation. At the same time a predictive diagram reflecting how detrimental these given stress/operating conditions are for the device performance would be of great significance for reliability engineers. Furthermore, representations of such experimental diagrams by an HCD model should serve as a criterion of the model consistency. Therefore, the developed physics-based model for hot-carrier degradation is applied in order to represent the experimental color maps depicting the device damage as a function of {V_gs,V_ds} in the case of long-channel and high-voltage n- and p-MOSFETs.

• 3.3.1 WCC of Long-Channel Devices
• 3.3.2 WCC of High-Voltage Devices

Next: 3.3.1 WCC of Long-Channel Devices Up: 3. Defect Creation Previous: 3.2 Secondary Generated Carriers