Physical Quantities

Symbol		Unit		Description
$\mathcal{Q}(f)$		s$^{-1}$		Collision operator
$e_{ij},\gamma_{ij}$		1		Engineering strain component $(i,j)$
${\ensuremath{\varepsilon_{ij}}}$		1		Component $(ij)$ of the strain tensor
$\sigma_{ij}$		GPa		Component $(ij)$ of the stress tensor
$C_{ijkl}$		GPa		Component $(ijkl)$ of the elastic stiffness tensor
$c_{ij}$		GPa		Component $(ij)$ of the contracted stiffness tensor
$S_{ijkl}$		GPa$^{-1}$		Component $(ijkl)$ of the elastic compliance tensor
$s_{ij}$		GPa$^{-1}$		Component $(ij)$ of the contracted compliance tensor
$D_n$		m$^2$s$^{-1}$		Electron diffusion coefficient
$E$		eV		Energy
$\Ef$		eV		Fermi energy
$\ensuremath{E_\mathrm{g}}$		eV		Band gap energy
${\ensuremath{\mathitbf{E}}}$		Vm$^{-1}$		Electric field
${\ensuremath{\mathitbf{F}}}$		N		Force
$f({\ensuremath{\mathitbf{r}}},{\ensuremath{\mathitbf{k}}},t)$		1		Distribution function
$\phi$		V		Electrostatic potential
$g$		m$^{-3}$eV$^{-1}$		Density of states
$\ensuremath{\hbar\omega}$		eV		Phonon energy
$k$		m$^{-1}$		Wave number
${\ensuremath{\mathitbf{k}}}$		m$^{-1}$		Wave number vector
$\ensuremath {k_\mathrm{f}}$		m$^{-1}$		Radius of Fermi sphere
$\ensuremath{\kappa_\mathrm{diel}}$		AsV$^{-1}$m$^{-1}$		Dielectric permittivity of dielectric layer
$\ensuremath{\kappa_\mathrm{sc}}$		AsV$^{-1}$m$^{-1}$		Dielectric permittivity of semiconductor
$\mu_n$		m$^2$V$^{-1}$s$^{-1}$		Electron mobility
$\mu_\mathrm{eff}$		m$^2$V$^{-1}$s$^{-1}$		Effective electron mobility
$\mu_p$		m$^2$V$^{-1}$s$^{-1}$		Hole mobility
$m$		kg		Mass
$n$		m$^{-3}$		Electron concentration
$\ensuremath {n_\mathrm{i}}$		m$^{-3}$		Intrinsic concentration
$\ensuremath {N_\mathrm{D}}$		m$^{-3}$		Concentration of donors
$\ensuremath {N_\mathrm{A}}$		m$^{-3}$		Concentration of acceptors
$\Psi$		m$^{-1/2}$		Wave function
$\mathbf{r}$		m		Space vector

Symbol		Unit		Description
$t$		s		Time
$T$		K		Temperature
$\mathcal{T}$		eV		Operator of kinetic energy
${\ensuremath{\mathitbf{v}}}$		ms$^{-1}$		Velocity vector

E. Ungersboeck: Advanced Modelling Aspects of Modern Strained CMOS Technology