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Previous: 6.3.1 Channel Mobility in UTB MOSFETs for (001) Up: 6.3 Electron Inversion Layer Mobility of Strained Si Next: 7. Summary and Conclusions |
The MC algorithm presented in Section 5.4 taking into account the Pauli principle has been compared to two other methods found in the literature [Bosi76,Yamakawa96]. The first algorithm to include the Pauli principle in the MC technique [Bosi76] is based on a self-consistent iterative algorithm that uses a rejection technique to account for the occupation probability of the final state after each scattering event. Since this auxiliary self-scattering mechanism is proportional to the occupation of the final states, the algorithm prevents a large number of classically allowed transitions.
A different approach to include degeneracy in MC simulations was given
in [Yamakawa96]. Inelastic scattering rates are multiplied with a factor
of
, where
and
denote the initial and final electron energy,
respectively. This additional factor stems from the use of Fermi-Dirac
statistics within the relaxation time approximation [Roychoudhury80].
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In the limit of vanishing field the mobility can also be calculated based on the
relaxation time approximation using the Kubo-Greenwood
formula [Fischetti03]. Figure 6.23 shows that
the new method yields the closest agreement, whereas a non-self-consistent
implementation of the algorithm proposed in [Bosi76], where
has been approximated by the equilibrium distribution function
, and the algorithm proposed by [Yamakawa96]
overestimate the effective mobility.
Using the proposed MC algorithm the mean electron velocity as a function of
total electron energy was extracted in the small driving field limit. For this
purpose the particle's energy domain was divided into a set of intervals . The mean velocity component of an electron in direction of the driving field
in a particular interval
can be obtained during a MC
simulation from a history of duration
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(6.3) |
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A interesting behavior can be observed when comparing the mean velocities
resulting from simulations with classical and Fermi-Dirac statistics from
Figure 6.24 and 6.25. As shown in Figure 6.24
the mean velocities coincide for both simulation modes in the nondegenerate
regime (small
) when only phonon scattering is considered in the MC
simulation. At high
, where the 2DEG is highly degenerate, a shift of
the mean velocity distribution toward higher energies and a decrease of its
peak can be observed as compared to the mean velocity resulting from
nondegenerate simulations without the Pauli principle. The coincidence of the
mean velocities in the nondegenerate regime is a check of consistency that the
algorithm with the Pauli principle included converges to the classical
algorithm for the nondegenerate 2DEG. At high
the different mean
velocities can be interpreted as follows: In simulations neglecting the Pauli
principle electrons have an equilibrium energy of
whereas the mean
energy resulting from simulations with the Pauli principle can be more than
twice as much. Since phonon scattering is proportional to the density of
states, which is an increasing step-like function for the 2DEG, electrons
at higher energies - as it is the case in simulations with the Pauli principle
- experience more scattering and thus the phonon-limited mobility is strongly
decreased (see right plots of Figure 6.24).
The plots of Figure 6.25 show the mean velocities and the effective
mobilities at various effective fields when surface roughness
scattering is included in MC simulations. At low
surface roughness
scattering does not play an important role, and the mean velocities compare
well with the simulation results for the phonon-limited mobility in
Figure 6.24. However, now even at high
the mean velocities stemming from simulations with and without the Pauli
principle do not differ as much. The large peak that was observed in the
nondegenerate phonon-limited mean velocity at small energies is
suppressed. This is a direct consequence of surface roughness scattering, which
is at small energies more effective than phonon scattering. Thus, the
effective mobility resulting from simulations with degenerate statistics are
incidentally in close agreement to those using classical statistics even though
the phonon-limited mobility experiences a noticeable reduction when using
degenerate statistics. As previously discussed, this close agreement can only
be understood from the cancellation of two effects: Degeneracy leads to an
increase of the mean kinetic energy. This leads to an increase in phonon
scattering and a decrease in the mobility. At the same time electrons with
larger kinetic energies experience less effective surface-roughness scattering,
thus the surface roughness limited mobility is increased. By coincidence, in
Si inversion layers at room temperature these two effects cancel each other at all effective
fields, and the difference between a simulation with nondegenerate and
degenerate statistics is very small.
As a final observation from Figure 6.24 and 6.25 one can see that due to degeneracy effects electrons at energies below the Fermi level have smaller mean velocities, which corresponds well to the general picture that highly occupied states have little contribution to transport.
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Previous: 6.3.1 Channel Mobility in UTB MOSFETs for (001) Up: 6.3 Electron Inversion Layer Mobility of Strained Si Next: 7. Summary and Conclusions |