List of Symbols

Notation

$ x$   Scalar
$ \ensuremath{\mathitbf{x}}$   Vector
$ \ensuremath{{\mathbf{A}}}$   Matrix
$ A_{ij}$   Elements of the matrix $ {\mathbf{A}}$
   
   
$ \partial_t(\cdot)$   Partial derivative with respect to $ t$
$ \ensuremath{\ensuremath{\mathitbf{\nabla}}}$   Nabla operator
$ \ensuremath{\ensuremath{\ensuremath{\mathitbf{\nabla}}}}x$   Gradient of $ x$
$ \ensuremath{\ensuremath{\ensuremath{\mathitbf{\nabla}}}\ensuremath{\cdot}}\ensuremath{\mathitbf{x}}$   Divergence of $ \ensuremath{\mathitbf{x}}$
     
   
   
   

Physical Quantities

Symbol   Description
$ \ensuremath{\epsilon}$   Dielectric permittivity
$ \ensuremath{\ensuremath{\epsilon}_{\ensuremath{\mathrm{s}}}}$   Relative low frequency dielectric permittivity
$ \ensuremath{\ensuremath{\epsilon}_{\infty}}$   Relative high frequency dielectric permittivity
$ \ensuremath{\mathcal{E}}$   Energy
$ \ensuremath{\ensuremath{\mathcal{E}}_0}$   Reference energy
$ \ensuremath{\ensuremath{\mathcal{E}}_{\ensuremath{\mathrm{c}}}}$   Conduction band edge energy
$ \ensuremath{\Delta \ensuremath{\mathcal{E}}_{\ensuremath{\mathrm{c}}}}$   Conduction band edge energy difference
$ \ensuremath{\ensuremath{\mathcal{E}}_{\ensuremath{\mathrm{f}}}}$   Fermi energy
$ \ensuremath{\ensuremath{\mathcal{E}}_{\ensuremath{\mathrm{g}}}}$   Band gap energy
$ \ensuremath{\ensuremath{\mathcal{E}}_{\ensuremath{\mathrm{v}}}}$   Valence band edge energy
$ \ensuremath{\Delta \ensuremath{\mathcal{E}}_{\ensuremath{\mathrm{v}}}}$   Valence band edge energy difference
$ \kappa$   Thermal conductivity
$ \ensuremath{\kappa_{\mathrm{L}}}$   Lattice contribution to thermal conductivity
$ \ensuremath{\kappa_{\ensuremath{n}}}$   Electron contribution to thermal conductivity
$ \ensuremath{\kappa_{\ensuremath{p}}}$   Hole contribution to thermal conductivity
$ \mu_\nu$   Mobility of carrier type $ \nu$
$ \ensuremath{\ensuremath{\mu}_{\ensuremath{n}}}$   Electron mobility
$ \ensuremath{\ensuremath{\mu}_{\ensuremath{p}}}$   Hole mobility
$ \ensuremath{\ensuremath{\mu}_\nu}^\ensuremath{\mathrm{L}}$   mobility due to lattice scattering
$ \ensuremath{\ensuremath{\mu}_\nu}^\ensuremath{\mathrm{LI}}$   mobility due to lattice and impurity scattering
$ \ensuremath{\ensuremath{\mu}_\nu}^\ensuremath{\mathrm{LIF}}$   mobility including lattice, impurity, and high field reduction
$ \ensuremath{\ensuremath{\mu}_\nu}^\ensuremath{\mathrm{LIT}}$   mobility including lattice, impurity, and high temperature reduction
$ C_\ensuremath{\mathrm{net}}$   Net concentration
$ \ensuremath{\sigma}$   Electric conductivity
$ \tau_{\epsilon,n}$   Electron energy relaxation time
$ \tau_{\epsilon,p}$   Hole energy relaxation time
$ \ensuremath{\varphi}$   Electrostatic potential

$ \ensuremath{\ensuremath{\mathitbf{B}}}$

  Magnetic field vector
$ \ensuremath{c_{\mathrm{L}}}$   Lattice heat capacity
$ \ensuremath{c_{\ensuremath{n}}}$   Heat capacity of the electron subsystem
$ \ensuremath{c_{\ensuremath{p}}}$   Heat capacity of the hole subsystem
$ \ensuremath{\ensuremath{\mathitbf{F}}}$   Force vector
$ G$   Carrier generation rate
$ \ensuremath{H}$   Heat generation term
$ \ensuremath{\ensuremath{\mathitbf{J}}}$   Current density

$ m^*$

  Density of states effective mass
$ \ensuremath{M_\mathrm{c,v}}$   Valley multiplicity
$ \ensuremath{n}$   Electron concentration
$ \ensuremath{n_\mathrm{i}}$   Intrinsic carrier concentration
$ \ensuremath{N_A}$   Concentration of acceptors
$ \ensuremath{N_\mathrm{c}}$   Effecive density of states in the conduction band
$ \ensuremath{N_D}$   Concentration of donors
$ \ensuremath{N_\ensuremath{\mathrm{tot}}}$   Total dopant concentration
$ \ensuremath{N_\mathrm{v}}$   Effecive density of states in the valence band
$ \ensuremath{p}$   Hole concentration
$ \ensuremath{Q}$   Heat flow
$ R$   Carrier recombination rate
$ \ensuremath{R_\ensuremath{\mathrm{th}}}$   Thermal resistance
$ \ensuremath{t}$   Time
$ \ensuremath{T_\ensuremath{\nu}}$   Carrier temperature
$ \ensuremath{T_{\mathrm{L}}}$   Lattice temperature
$ \ensuremath{T_\ensuremath{n}}$   Electron temperature
$ \ensuremath{T_\ensuremath{p}}$   Hole temperature
$ I$   Current
$ V$   Voltage
$ V_\ensuremath{\mathrm{C}}$   Contact voltage
$ v$   Velocity
$ \ensuremath{v_{\rm {s}}}$   Average sound velocity
$ \ensuremath{v_{\rm {st}}}$   Transversal sound velocity
$ \ensuremath{v_{\rm {sl}}}$   Longitudinal sound velocity
   

Fundamental Constants

$ \mathrm{h}$   Planck's constant $ 6.6260755 \times 10^{-34}   \mathrm{J}   \mathrm{s}$
$ \hbar$   Reduced Planck's constant $ \mathrm{h} / (2   \pi)$
$ \ensuremath{\mathrm{k}}_\ensuremath{\mathrm{B}}$   Boltzmann's constant $ 1.3806503 \times 10^{-23}   \mathrm{JK^{-1}}$
$ \mathrm{q}$   Elementary charge $ 1.6021892 \times 10^{-19}   \mathrm{C}$
$ m_0^*$   Electron rest mass $ 9.1093897 \times 10^{-31}   \mathrm{kg}$
$ \ensuremath{\epsilon}_0$   Vacuum permittivity $ 8.8541878 \times 10^{-12}   \mathrm{Fm^{-1}}$

S. Vitanov: Simulation of High Electron Mobility Transistors