Own Publications

1

V. Palankovski, S. Vitanov, and R. Quay, ``Field-Plate Optimization of AlGaN/GaN HEMTs,'' in Tech. Dig. IEEE Compound Semiconductor IC Symp., (San Antonio), pp. 107-110, Nov. 2006.

2

S. Vitanov, V. Palankovski, R. Quay, and E. Langer, ``Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs,'' in TARGET DAYS - Book of Proceedings, (Frascati), pp. 81-84, Oct. 2006.

3

S. Vitanov, V. Palankovski, S. Murad, T. Roedle, R. Quay, and S. Selberherr, ``Hydrodynamic Modeling of AlGaN/GaN HEMTs,'' in Proc. Intl.Conf. on Simulation of Semiconductor Processes and Devices, (Vienna), pp. 273-276, Sept. 2007.

4

S. Vitanov, V. Palankovski, S. Murad, T. Roedle, R. Quay, and S. Selberherr, ``Predictive Simulation of AlGaN/GaN HEMTs,'' in Tech. Dig. IEEE Compound Semiconductor IC Symp., (Portland), pp. 131-134, Oct. 2007.

5

S. Vitanov and V. Palankovski, ``Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study,'' in Proc.Intl. Semiconductor Device Research Symp., (Maryland), Dec. 2007.

6

S. Vitanov, V. Palankovski, R. Quay, and E. Langer, ``Modeling of Electron Transport in GaN-Based Materials and Devices,'' in AIP Conference Proc., vol. 893, pp. 1399-1400, American Institute of Physics, 2007.

7

S. Vitanov, M. Nedjalkov, and V. Palankovski, ``A Monte Carlo Model of Piezoelectric Scattering in GaN,'' in Lecture Notes in Computer Science, vol. 4310, pp. 197-204, Springer-Verlag, 2007.

8

S. Vitanov and V. Palankovski, ``Monte Carlo Study of Electron Transport of InN,'' in Springer Proceedings in Physics, vol. 119, pp. 97-100, Springer-Verlag, 2008.

9

S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, and R. Quay, ``Systematical Study of InAlN/GaN Devices by Numerical Simulation,'' in European Workshop on Heterostructure Technology (HETECH) Book of Abstracts, (Venice), pp. 159-160, Nov. 2008.

10

S. Vitanov and V. Palankovski, ``Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation,'' in Junior Scientist Conf. Proc., (Vienna), pp. 221-222, Nov. 2008.

11

S. Vitanov and V. Palankovski, ``Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study,'' Solid-State Electron., vol. 52, no. 11, pp. 1791-1795, Nov. 2008.

12

S. Vitanov, V. Palankovski, S. Maroldt, and R. Quay, ``A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates,'' in European Workshop on Heterostructure Technology (HETECH) Book of Abstracts, (Guenzburg/Ulm), pp. 109-110, Nov. 2009.

13

S. Vitanov, V. Palankovski, S. Maroldt, and R. Quay, ``High-Temperature Modeling of AlGaN/GaN HEMTs,'' in Proc.Intl. Semiconductor Device Research Symp., (Maryland), Dec. 2009.

14

S. Vitanov and V. Palankovski, ``Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs,'' in Annual Journal of Electronics, (Sozopol), pp. 144-147, Sept. 2009.

15

S. Vitanov, V. Palankovski, S. Maroldt, and R. Quay, ``High-temperature modeling of AlGaN/GaN HEMTs,'' Solid-State Electron., vol. 52, no. 10, pp.1195-1112, 2010.

16

S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, and O. Ambacher, ``Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz,'' IEICE Trans.Electron., vol. 93, no. 8, pp. 1238-1244, 2010.

17

S. Vitanov and V. Palankovski, ``High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs,'' in Junior Scientist Conf. Proc., (Vienna), pp. 59-60, Apr. 2010.

18

S. Vitanov and V. Palankovski, ``Electron Mobility Models for III-Nitrides,'' in Annual Journal of Electronics, (Sozopol), pp. 18-21, Sep. 2010.

19

S. Vitanov, V. Palankovski, S. Maroldt, and R. Quay, ``Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs,'' in Proc. Europ. Solid-State Device Research Conf. (ESSDERC), Fringe Poster Session, (Sevilla), Sep. 2010.

20

S. Vitanov, V. Palankovski, and S. Selberherr, ``Hydrodynamic Models for GaN-Based HEMTs,'' in Proc. Europ. Solid-State Device Research Conf. (ESSDERC), Fringe Poster Session, (Sevilla), Sep. 2010.