Journal Articles
Modeling the Impact of Incomplete Conformality During Atomic Layer Processing (invited) Journal Article
In: Solid-State Electronics, vol. 211, pp. 108816, 2024, ISSN: 0038-1101.
Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K Journal Article
In: Crystals, vol. 13, no. 9, pp. 1398, 2023, ISSN: 2073-4352.
In: ECS Journal of Solid State Science and Technology, vol. 12, no. 7, pp. 076014, 2023, ISSN: 2162-8777.
A Theoretical Study of Armchair Antimonene Nanoribbons in the Presence of Uniaxial Strain Based on First-Principles Calculations Journal Article
In: ACS Applied Electronic Materials, vol. 5, no. 8, pp. 4514–4522, 2023, ISSN: 2637-6113.
The Role of Thermalization in the Cooling Dynamics of Hot Carrier Solar Cells Journal Article
In: Solar RRL, vol. 7, no. 13, 2023, ISSN: 2367-198X.
Effect of Mask Geometry Variation on Plasma Etching Profiles Journal Article
In: Micromachines, vol. 14, no. 3, pp. 665, 2023, ISSN: 2072-666X.
A two-step dry etching model for non-uniform etching profile in gate-all-around field-effect transistor manufacturing (submitted) Journal Article
In: ACS Applied Electronic Materials, 0000.
The Hot Phonon Bottleneck Effect in Metal Halide Perovskites (submitted) Journal Article
In: ACS Energy Letters, 0000.
Inproceedings
Atomistic Study of 4H-SiC Using Ab Initio and Machine Learning Techniques (invited) Inproceedings
In: Joint International Meeting of The Electrochemical Society (ECS), The Electrochemical Society of Japan (ECSJ), and The Korean Electrochemical Society (KECS) - PRiME 2024, 2024.
Efficient Multi-Scale Modeling of Semiconductor Device Fabrication (invited) Inproceedings
In: Proceedings of the 5th International Congress on Advanced Materials Sciences and Engineering (AMSE), 2024.
Semiconductor Fabrication at Multiple Time and Length Scales (invited) Inproceedings
In: Proceedings of Austrochip - Workshop on Microelectronics, 2024.
Modeling and Simulation of ALD in a Level Set Framework (invited) Inproceedings
In: Proceedings of the 7th International Conference ALD for Industry, 2024.
Merging Reactor and Feature Scales for Plasma Etch Modeling (invited) Inproceedings
In: Proceedings of IEEE Nanotechnology Council - IEEE NANO 2024, 2024.
Multi-Scale Process TCAD for Advanced Semiconductor Fabrication Inproceedings
In: Book of Abstracts MESS24 - Microelectronic Systems Symposium, 2024.
Cluster-Based Model for Dopant Activation in SiC Inproceedings
In: Book of Abstracts MESS24 - Microelectronic Systems Symposium, 2024.
Multi-Scale Model for High Aspect Ratio TiN Etching in a Cl$_2$/Ar Inductively Coupled Plasma Inproceedings
In: Proceedings of the Plasma Processing and Technology International Conference (PlasmaTech), 2024.
Spline Interpolation-Based Multi-Scale Model for Etching in a Chlorine-Argon Inductively Coupled Plasma Inproceedings
In: Proceedings of the 20th International Conference on Modeling and Analysis of Semiconductor Manufacturing (MASM), 2024, (Part of Winter Simulation Conference (WSC)).
Modeling Non-Uniformity During Two-Step Dry Etching of Si/SiGe Stacks for Gate-All-Around FETs Inproceedings
In: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024.
MD Simulation of Epitaxial Recrystallization and Defect Structure of Al-Implanted 4H-SiC Inproceedings
In: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024.
Equipment-Informed Machine Learning-Assisted Feature-Scale Plasma Etching Model Inproceedings
In: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024.
Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings Inproceedings
In: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024.
Cluster-Based Multivariate Spline Model for Dopant Activation in SiC Inproceedings
In: Book of Abstracts AMaSiS 2024 - Applied Mathematics and Simulation for Semiconductor Devices, 2024.
Electromigration Reliability of Buried Power Rails in Vertically Stacked Devices Inproceedings
In: 2023 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2023.
Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures Inproceedings
In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE, 2023.
Molecular Dynamics Study of Al Implantation in 4H-SiC Inproceedings
In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE, 2023.
Physics-Informed Compact Model for SF$_6$/O$_2$ Plasma Etching Inproceedings
In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE, 2023.
Fast 3D Flux Calculation Using Monte Carlo Ray Tracing on GPUs Inproceedings
In: Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT '2023), pp. 67–72, 2023.
Process Simulation in Micro- And Nano-Electronics (invited) Inproceedings
In: Book of abstracts of the International Workshop on Computational Nanotechnology, pp. 38–39, 2023.