A journal has been accepted, where we study Si/SiGe devices at cryogenic temperatures.
Garcia-Barrientos, Abel, et al. “Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K.” Crystals 13.9 (2023): 1398.
Having the ability to model complex heterostructures is one step in the DTCO cycle. Once an optimized structure is found, process TCAD can be used to devise a fabrication strategy for these.