Our paper entitled “Mixed-Hot Carrier/Bias Temperature Instability Degradation Regimes in Full {VG,VD} Bias Space: Implications and Peculiarities” has been accepted for publication in IEEE Transactions of Electron Devices journal.
Michael Waltl | Single-Defect Spectroscopy in Semiconductor Devices
Christian Doppler Laboratory at the Institue for Microelectronics
Our paper entitled “Mixed-Hot Carrier/Bias Temperature Instability Degradation Regimes in Full {VG,VD} Bias Space: Implications and Peculiarities” has been accepted for publication in IEEE Transactions of Electron Devices journal.