Our paper entitled “Separation of Electron and Hole Trapping Components in SiON nMOS Transistors” has been accepted for publication in Microelectronics Reliability journal.
Michael Waltl | Single-Defect Spectroscopy in Semiconductor Devices
Christian Doppler Laboratory at the Institue for Microelectronics
Our paper entitled “Separation of Electron and Hole Trapping Components in SiON nMOS Transistors” has been accepted for publication in Microelectronics Reliability journal.