Our paper entitled “Extraction of Statistical Gate Oxide Parameters from Large MOSFET Arrays” has been accepted for publication in IEEE Transactions of Device and Material Reliability and will be available online soon.
Michael Waltl | Single-Defect Spectroscopy in Semiconductor Devices
Christian Doppler Laboratory at the Institue for Microelectronics
Our paper entitled “Extraction of Statistical Gate Oxide Parameters from Large MOSFET Arrays” has been accepted for publication in IEEE Transactions of Device and Material Reliability and will be available online soon.