| 48. | Waltl, Michael; Hernandez, Yoanlys; Schleich, Christian; Waschneck, Katja; Stampfer, Bernhard; Reisinger, Hans; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models Book Chapter Dr. Jean François Michaud, Dr. Luong Viet Phung, Prof. Daniel Alquier; Prof. Dominique Planson (Ed.): pp. 8, 2022, ISBN: 9783035727609. Links | BibTeX @inbook{Waltl2022b,
title = {Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models},
author = {Waltl, Michael and Hernandez, Yoanlys and Schleich, Christian and Waschneck, Katja and Stampfer, Bernhard and Reisinger, Hans and Grasser, Tibor},
editor = {Dr. Jean François Michaud, Dr. Luong Viet Phung, Prof. Daniel Alquier and Prof. Dominique Planson},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2022/BC2022_Waltl_1.pdf},
isbn = {9783035727609},
year = {2022},
date = {2022-06-15},
pages = {8},
keywords = {},
pubstate = {published},
tppubtype = {inbook}
}
|
| 47. | Waltl, Michael; Hernandez, Yoanlys; Schleich, Christian; Waschneck, Katja; Stampfer, Bernhard; Reisinger, Hans; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models Journal Article Materials Science Forum, 1062 , 2022. Links | BibTeX @article{Waltl2022c,
title = {Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models},
author = {Waltl, Michael and Hernandez, Yoanlys and Schleich, Christian and Waschneck, Katja and Stampfer, Bernhard and Reisinger, Hans and Grasser, Tibor},
doi = {10.4028/p-pijkeu},
year = {2022},
date = {2022-06-13},
journal = {Materials Science Forum},
volume = {1062},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 46. | Waltl, Michael; Knobloch, Theresia; Tselios, Konstantinos; Filipovic, Lado; Stampfer, Bernhard; Hernandez, Yoanlys; Waldhör, Dominic; Illarionov, Yury; Kaczer, Ben; Grasser, Tibor Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Journal Article Advanced Materials, pp. 23, 2022. Links | BibTeX @article{Waltl2022d,
title = {Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?},
author = {Waltl, Michael and Knobloch, Theresia and Tselios, Konstantinos and Filipovic, Lado and Stampfer, Bernhard and Hernandez, Yoanlys and Waldhör, Dominic and Illarionov, Yury and Kaczer, Ben and Grasser, Tibor},
doi = {10.1002/adma.202201082},
year = {2022},
date = {2022-06-10},
journal = {Advanced Materials},
pages = {23},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 45. | Barbara Waschiczek Entwicklung eines Steuerungsmoduls mit Touchscreen für Messgeräte unter Einsatz der Grafikbibliothek LVGL Miscellaneous 2022, Bachelor's Thesis, TU Wien, Supervised by B. Stampfer, T. Grasser and M. Waltl. BibTeX @misc{Waschiczek2022,
title = {Entwicklung eines Steuerungsmoduls mit Touchscreen für Messgeräte unter Einsatz der Grafikbibliothek LVGL},
author = {Barbara Waschiczek},
year = {2022},
date = {2022-02-17},
note = {Bachelor's Thesis, TU Wien, Supervised by B. Stampfer, T. Grasser and M. Waltl},
keywords = {},
pubstate = {published},
tppubtype = {misc}
}
|
| 44. | M. Waltl Editorial for the Special Issue on Robust Microelectronic Devices Journal Article Crystals, 12 , 2022. Links | BibTeX @article{Waltl2022,
title = {Editorial for the Special Issue on Robust Microelectronic Devices},
author = {M. Waltl},
doi = {10.3390/cryst12010016},
year = {2022},
date = {2022-01-01},
journal = {Crystals},
volume = {12},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 43. | Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Tibor Grasser, Michael Waltl Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental Journal Article IEEE Transactions on Electron Devices, 68 (12), pp. 6, 2021. Links | BibTeX @article{Michl2021,
title = {Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental},
author = {Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Tibor Grasser, Michael Waltl},
doi = {10.1109/TED.2021.3117740},
year = {2021},
date = {2021-12-02},
journal = {IEEE Transactions on Electron Devices},
volume = {68},
number = {12},
pages = {6},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 42. | Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Michael Waltl, Tibor Grasser Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory Journal Article IEEE Transactions on Electron Devices, 68 (12), pp. 6, 2021. Links | BibTeX @article{Michl2021b,
title = {Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory},
author = {Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Michael Waltl, Tibor Grasser},
doi = {10.1109/TED.2021.3116931},
year = {2021},
date = {2021-12-02},
journal = {IEEE Transactions on Electron Devices},
volume = {68},
number = {12},
pages = {6},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 41. | M. Waltl, D. Waldhoer, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. G. Ioannidis, R. Minixhofer; T. Grasser Impact of single-defects on the variability of CMOS inverter circuits Journal Article Microelectronics Reliability, 126 (6), 2021. Links | BibTeX @article{Waltl2021,
title = {Impact of single-defects on the variability of CMOS inverter circuits},
author = {M. Waltl, D. Waldhoer, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. G. Ioannidis, R. Minixhofer and T. Grasser},
doi = {10.1016/j.microrel.2021.114275},
year = {2021},
date = {2021-12-01},
journal = {Microelectronics Reliability},
volume = {126},
number = {6},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 40. | Matthias Kratzmann Development of a Low-Noise CV Measurement Module for Defect-Spectroscopy of MOS Transistors Masters Thesis 2021, Supervised by M. Waltl and T. Grasser. BibTeX @mastersthesis{Kratzmann2021,
title = {Development of a Low-Noise CV Measurement Module for Defect-Spectroscopy of MOS Transistors},
author = {Matthias Kratzmann},
year = {2021},
date = {2021-11-19},
note = {Supervised by M. Waltl and T. Grasser},
keywords = {},
pubstate = {published},
tppubtype = {mastersthesis}
}
|
| 39. | Tobias Zinsler Analyse von Stufenhöhen in der Schwellspannung bei SiON n-MOSFETs mit Hilfe des Python-TDDS Programms Miscellaneous 2021, Bachelor's Thesis, TU Wien, Supervised by T. Knobloch, K. Tselios, T. Grasser and M. Waltl. BibTeX @misc{Zinsler2021,
title = { Analyse von Stufenhöhen in der Schwellspannung bei SiON n-MOSFETs mit Hilfe des Python-TDDS Programms},
author = {Tobias Zinsler },
year = {2021},
date = {2021-10-22},
note = {Bachelor's Thesis, TU Wien, Supervised by T. Knobloch, K. Tselios, T. Grasser and M. Waltl},
keywords = {},
pubstate = {published},
tppubtype = {misc}
}
|
| 38. | C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies Journal Article IEEE Transactions on Electron Devices, 68 (8), pp. 7, 2021. Links | BibTeX @article{Schleich2021,
title = {Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies},
author = {C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2021/JB2021_Schleich_1.pdf},
doi = {10.1109/TED.2021.3092295 },
year = {2021},
date = {2021-07-28},
journal = {IEEE Transactions on Electron Devices},
volume = {68},
number = {8},
pages = {7},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 37. | D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser Toward Automated Defect Extraction From Bias Temperature Instability Measurements Journal Article IEEE Transactions on Electron Devices, 68 (8), pp. 7, 2021. Links | BibTeX @article{Waldhör2021,
title = {Toward Automated Defect Extraction From Bias Temperature Instability Measurements},
author = {D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2021/JB2021_Waldhoer_1.pdf},
doi = {10.1109/TED.2021.3091966},
year = {2021},
date = {2021-07-27},
journal = {IEEE Transactions on Electron Devices},
volume = {68},
number = {8},
pages = {7},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 36. | M. Kampl, H. Kosina, M. Waltl Improved Sampling Algorithms for Monte Carlo Device Simulation Conference International Workshop on Computational Nanotechnology (IWCN), 2021. Links | BibTeX @conference{Kampl2021,
title = {Improved Sampling Algorithms for Monte Carlo Device Simulation},
author = {M. Kampl, H. Kosina, M. Waltl},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2021/CP2021_Kampl_1.pdf},
year = {2021},
date = {2021-07-07},
booktitle = {International Workshop on Computational Nanotechnology (IWCN)},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 35. | K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. G. Ioannidis, H. Enichlmair, T. Grasser; M. Waltl On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors Journal Article IEEE Transactions on Device and Materials Reliability, 21 (2), pp. 199-206, 2021. Links | BibTeX @article{Tselios2021,
title = {On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors},
author = {K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. G. Ioannidis, H. Enichlmair, T. Grasser and M. Waltl},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2021/hashed_links/ep4P4Cr6XQnOWXrCY_us.pdf
},
doi = {10.1109/TDMR.2021.3080983},
year = {2021},
date = {2021-06-19},
journal = {IEEE Transactions on Device and Materials Reliability},
volume = {21},
number = {2},
pages = {199-206},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 34. | Moritz Steinhauser Einfluss des Magnetfeldes auf das Trappingverhalten von Einzeldefekten in Feldeffekttransistoren Miscellaneous 2021, Bachelor's Thesis, TU Wien, Supervised by C. Schleich, M. Waltl and T. Grasser. BibTeX @misc{Steinhauser2021,
title = {Einfluss des Magnetfeldes auf das Trappingverhalten von Einzeldefekten in Feldeffekttransistoren},
author = {Moritz Steinhauser},
year = {2021},
date = {2021-03-04},
note = {Bachelor's Thesis, TU Wien, Supervised by C. Schleich, M. Waltl and T. Grasser},
keywords = {},
pubstate = {published},
tppubtype = {misc}
}
|
| 33. | Johannes Wiesböck Signalgenerator für Defektspektroskopie in Halbleitertransistoren Miscellaneous 2021, Bachelor's Thesis, TU Wien, Supervised by M. Waltl and T. Grasser. BibTeX @misc{Wiesböck2021,
title = {Signalgenerator für Defektspektroskopie in Halbleitertransistoren},
author = {Johannes Wiesböck},
year = {2021},
date = {2021-02-01},
note = {Bachelor's Thesis, TU Wien, Supervised by M. Waltl and T. Grasser},
keywords = {},
pubstate = {published},
tppubtype = {misc}
}
|
| 32. | A. P. Shah; M.Waltl Impact of negative bias temperature instability on single event transients in scaled logic circuits Journal Article International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2020. Links | BibTeX @article{Shah2020,
title = {Impact of negative bias temperature instability on single event transients in scaled logic circuits},
author = {A. P. Shah and M.Waltl },
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/hashed_links/ep4P4Pr.HGHrCY_us.pdf},
doi = {10.1002/jnm.2854},
year = {2020},
date = {2020-12-31},
journal = {International Journal of Numerical Modelling: Electronic Networks, Devices and Fields },
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 31. | M. Jech, G. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl; T. Grasser Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full VG, VD Bias Space: Implications and Peculiarities Journal Article IEEE Transaction on Electron Devices, 67 (8), pp. 33115-3322, 2020. Links | BibTeX @article{Jech2020,
title = {Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full VG, VD Bias Space: Implications and Peculiarities},
author = {M. Jech, G. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl and T. Grasser},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/hashed_links/ep4P4PreQBHrCY_us.pdf},
doi = {10.1109/TED.2020.3000749},
year = {2020},
date = {2020-12-31},
journal = {IEEE Transaction on Electron Devices},
volume = {67},
number = {8},
pages = {33115-3322},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 30. | M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Aichinger, W. Gustin, H. Reisinger, T. Grasser The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters Journal Article Crystals, 10 , pp. 1143-1 - 1143-14, 2020. Links | BibTeX @article{Feil2020,
title = {The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters},
author = {M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Aichinger, W. Gustin, H. Reisinger, T. Grasser},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/hashed_links/5d4P4PrSJGXXQJrCY_us.pdf},
doi = {doi:10.3390/cryst10121143},
year = {2020},
date = {2020-12-12},
journal = {Crystals},
volume = {10},
pages = {1143-1 - 1143-14},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 29. | B. Stampfer Advanced Electrical Characterization of Charge Trapping in MOS Transistors PhD Thesis 2020, PhD Thesis, TU Wien, Supervised by T. Grasser. BibTeX @phdthesis{Stampfer2020b,
title = {Advanced Electrical Characterization of Charge Trapping in MOS Transistors},
author = {B. Stampfer},
editor = {Reviewer: T. Grasser, M. Nafria Maqueda, F. M. Puglisi},
year = {2020},
date = {2020-12-04},
note = {PhD Thesis, TU Wien, Supervised by T. Grasser},
keywords = {},
pubstate = {published},
tppubtype = {phdthesis}
}
|
| 28. | M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser Separation of electron and hole trapping components of PBTI in SiON nMOS transistors Journal Article Microelectronics Reliability, 114 , 2020. Links | BibTeX @article{Waltl2020,
title = {Separation of electron and hole trapping components of PBTI in SiON nMOS transistors},
author = {M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/hashed_links/ep4P4PrcGnjnr9Y_us.pdf},
doi = {10.1016/j.microrel.2020.113746},
year = {2020},
date = {2020-12-01},
journal = {Microelectronics Reliability},
volume = {114},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 27. | Waltl M. Spectroscopy of Single Defects in Semiconductor Transistors Conference International Conference on Materials Science and Engineering , 2020. Links | BibTeX @conference{M.2020d,
title = {Spectroscopy of Single Defects in Semiconductor Transistors},
author = {Waltl M.},
url = {http://www.iue.tuwien.ac.at/pdf/ib_2020/CP2020_Waltl_2.pdf},
year = {2020},
date = {2020-11-05},
booktitle = {International Conference on Materials Science and Engineering },
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 26. | K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors Conference 2020 IEEE International Integrated Reliability Workshop (IIRW) , 2020. Links | BibTeX @conference{Tselios2020b,
title = {Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors},
author = {K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl},
doi = {10.1109/IIRW49815.2020.9312871},
year = {2020},
date = {2020-10-08},
booktitle = {2020 IEEE International Integrated Reliability Workshop (IIRW) },
pages = {1-6 },
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 25. | Vasilev A., Jech M., Grill A., Rzepa G., Schleich C., Makarov A., Pobegen G., Grasser T., Waltl M., Tyaginov S. Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors Conference 2020 IEEE International Integrated Reliability Workshop (IIRW), 2020. Links | BibTeX @conference{A.2020,
title = {Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors},
author = {Vasilev A., Jech M., Grill A., Rzepa G., Schleich C., Makarov A., Pobegen G., Grasser T., Waltl M., Tyaginov S.},
doi = {10.1109/IIRW49815.2020.9312864},
year = {2020},
date = {2020-10-08},
booktitle = {2020 IEEE International Integrated Reliability Workshop (IIRW)},
pages = {1-4},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 24. | Stampfer B., Simicic M., Weckx P., Abbasi A., Kaczer B., Grasser T., Waltl M. Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays Journal Article IEEE Transactions on Device and Materials Reliability, 20 (2), pp. 6, 2020. Links | BibTeX @article{B.2020b,
title = {Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays},
author = {Stampfer B., Simicic M., Weckx P., Abbasi A., Kaczer B., Grasser T., Waltl M.},
doi = {10.1109/TDMR.2020.2985109},
year = {2020},
date = {2020-09-01},
journal = {IEEE Transactions on Device and Materials Reliability},
volume = {20},
number = {2},
pages = {6},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 23. | Waltl M. Reliability of Miniaturized Transistors from the Perspective of Single-Defects Journal Article Micromachines, 11 (8), pp. 21, 2020. Links | BibTeX @article{M.2020c,
title = {Reliability of Miniaturized Transistors from the Perspective of Single-Defects},
author = {Waltl M.},
doi = {10.3390/mi11080736},
year = {2020},
date = {2020-08-01},
journal = {Micromachines},
volume = {11},
number = {8},
pages = {21},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 22. | A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures Conference IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020, ISBN: 978-1-7281-3200-6. Links | BibTeX @conference{Grill2020,
title = {Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures},
author = {A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu},
doi = {10.1109/IRPS45951.2020.9128316},
isbn = {978-1-7281-3200-6},
year = {2020},
date = {2020-07-13},
booktitle = {IEEE International Reliability Physics Symposium (IRPS)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 21. | Bernhard Ruch; Gregor Pobegen; Christian Schleich; Tibor Grasser Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping Conference 2020 IEEE International Reliability Physics Symposium (IRPS) , 2020, ISBN: 978-1-7281-3200-6. Links | BibTeX @conference{Ruch2020,
title = {Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping},
author = {Bernhard Ruch; Gregor Pobegen; Christian Schleich; Tibor Grasser },
doi = {10.1109/IRPS45951.2020.9129513},
isbn = {978-1-7281-3200-6},
year = {2020},
date = {2020-07-12},
booktitle = {2020 IEEE International Reliability Physics Symposium (IRPS) },
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 20. | J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures Conference IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020, ISBN: 978-1-7281-3200-6. Links | BibTeX @conference{Michl2020,
title = {Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures},
author = {J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl},
doi = {10.1109/IRPS45951.2020.9128349},
isbn = {978-1-7281-3200-6},
year = {2020},
date = {2020-07-12},
booktitle = {IEEE International Reliability Physics Symposium (IRPS)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 19. | J. Berens; M. Weger; G. Pobegen; T. Aichinger; G. Rescher; C. Schleich; T. Grasser Similarities and Differences of BTI in SiC and Si Power MOSFETs Conference 2020 IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020, ISBN: 978-1-7281-3200-6. Links | BibTeX @conference{Berens2020,
title = {Similarities and Differences of BTI in SiC and Si Power MOSFETs},
author = {J. Berens; M. Weger; G. Pobegen; T. Aichinger; G. Rescher; C. Schleich; T. Grasser },
doi = {10.1109/IRPS45951.2020.9129259},
isbn = {978-1-7281-3200-6},
year = {2020},
date = {2020-07-11},
booktitle = {2020 IEEE International Reliability Physics Symposium (IRPS)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 18. | Waltl M. Defect Spectroscopy in SiC Devices Conference 2020 IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020. Links | BibTeX @conference{M.2020b,
title = {Defect Spectroscopy in SiC Devices},
author = {Waltl M. },
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/CP2020_Waltl_1.pdf},
doi = {10.1109/IRPS45951.2020.9129539},
year = {2020},
date = {2020-07-10},
booktitle = {2020 IEEE International Reliability Physics Symposium (IRPS)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 17. | D. Waldhoer, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser Atomistic Modeling of Oxide Defects Book Chapter T. Grasser (Ed.): pp. 40, Springer, 2020, ISBN: 978-3-030-37499-0. Links | BibTeX @inbook{Waldhoer2020,
title = {Atomistic Modeling of Oxide Defects},
author = {D. Waldhoer, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser},
editor = {T. Grasser},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/BC2020_Waldhoer_1.pdf},
doi = {10.1007/978-3-030-37500-3_18},
isbn = {978-3-030-37499-0},
year = {2020},
date = {2020-06-25},
pages = {40},
publisher = {Springer},
keywords = {},
pubstate = {published},
tppubtype = {inbook}
}
|
| 16. | B. Stampfer, A. Grill, M. Waltl Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals Book Chapter T. Grasser (Ed.): pp. 29, Springer, 2020, ISBN: 978-3-030-37499-0. Links | BibTeX @inbook{Stampfer2020,
title = {Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals},
author = {B. Stampfer, A. Grill, M. Waltl},
editor = {T. Grasser},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/BC2020_Stampfer_1.pdf},
doi = {10.1007/978-3-030-37500-3_7},
isbn = {978-3-030-37499-0},
year = {2020},
date = {2020-06-25},
pages = {29},
publisher = {Springer},
keywords = {},
pubstate = {published},
tppubtype = {inbook}
}
|
| 15. | Grasser T., Kaczer B., O’Sullivan B., Rzepa G., Stampfer B., Waltl M. The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release Conference 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, ISBN: 978-1-7281-3199-3. Links | BibTeX @conference{T.2020b,
title = {The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release},
author = {Grasser T., Kaczer B., O’Sullivan B., Rzepa G., Stampfer B., Waltl M.},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/hashed_links/5d4P4PrSJGXXQJrCY_us.pdf},
doi = {10.1109/IRPS45951.2020.9129198},
isbn = {978-1-7281-3199-3},
year = {2020},
date = {2020-05-30},
booktitle = {2020 IEEE International Reliability Physics Symposium (IRPS)},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 14. | Waltl M. Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors Journal Article IEEE Transactions on Device and Materials Reliability, 20 (2), pp. 242-250, 2020. Links | BibTeX @article{M.2020,
title = {Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors},
author = {Waltl M.},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Waltl_1.pdf},
doi = {10.1109/TDMR.2020.2988650},
year = {2020},
date = {2020-04-16},
journal = {IEEE Transactions on Device and Materials Reliability},
volume = {20},
number = {2},
pages = {242-250},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 13. | Stampfer B., Schanovsky F., Grasser T., Waltl M. Semi-Automated Extraction of the Distribution of Single Defects Journal Article Micromachines, 11 (4), pp. 446, 2020. Links | BibTeX @article{B.2020,
title = {Semi-Automated Extraction of the Distribution of Single Defects},
author = {Stampfer B., Schanovsky F., Grasser T., Waltl M.},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2020/JB2020_Stampfer_1.pdf},
doi = {10.3390/mi11040446},
year = {2020},
date = {2020-04-15},
journal = {Micromachines},
volume = {11},
number = {4},
pages = {446},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 12. | M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation Conference Proceedings of the International Electron Devices Meeting (IEDM), 2019. Links | BibTeX @conference{Jech2019,
title = {First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation},
author = {M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser},
url = {http://www.iue.tuwien.ac.at/pdf/ib_2019/hashed_links/5d4PCEreQBHrCY_us.pdf},
doi = {10.1109/IEDM19573.2019.8993630},
year = {2019},
date = {2019-12-13},
booktitle = {Proceedings of the International Electron Devices Meeting (IEDM)},
pages = {4},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 11. | C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs Conference Proceedings of the International Electron Devices Meeting (IEDM), 2019. Links | BibTeX @conference{Schleich2019c,
title = {Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs},
author = {C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl},
url = {https://www.iue.tuwien.ac.at/pdf/ib_2019/hashed_links/5d4PCEr.BHnQOBHrCY_us.pdf},
doi = {10.1109/IEDM19573.2019.8993446},
year = {2019},
date = {2019-12-13},
booktitle = {Proceedings of the International Electron Devices Meeting (IEDM)},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 10. | Stampfer B., Simicic M., Weckx P., Abbasi A., Kaczer B., Grasser T., Waltl M. Statistical Characterization of BTI and RTN using Integrated pMOS Arrays Conference 2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019. Links | BibTeX @conference{B.2019,
title = {Statistical Characterization of BTI and RTN using Integrated pMOS Arrays},
author = {Stampfer B., Simicic M., Weckx P., Abbasi A., Kaczer B., Grasser T., Waltl M.},
doi = {10.1109/IIRW47491.2019.8989904},
year = {2019},
date = {2019-10-13},
booktitle = {2019 IEEE International Integrated Reliability Workshop (IIRW)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 9. | Waldhoer D., Wimmer Y., El-Sayed A. M., Goes W., Waltl M., Grasser T. Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects Conference 2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019. Links | BibTeX @conference{D.2019,
title = {Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects},
author = {Waldhoer D., Wimmer Y., El-Sayed A. M., Goes W., Waltl M., Grasser T.},
doi = {10.1109/IIRW47491.2019.8989889},
year = {2019},
date = {2019-10-13},
booktitle = {2019 IEEE International Integrated Reliability Workshop (IIRW)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 8. | Scharlotta J., Bersuker G., Tyaginoy S., Young C., Haase G., Rzepa G., Waltl M., Chohan T., Iyer S., Kotov A., Zambelli C., Guarin F., Puglisi F. M., Ostermaier C. IIRW 2019 Discussion Group II: Reliability for Aerospace Applications Conference 2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019. Links | BibTeX @conference{J.2019,
title = {IIRW 2019 Discussion Group II: Reliability for Aerospace Applications},
author = {Scharlotta J., Bersuker G., Tyaginoy S., Young C., Haase G., Rzepa G., Waltl M., Chohan T., Iyer S., Kotov A., Zambelli C., Guarin F., Puglisi F. M., Ostermaier C.},
doi = {10.1109/IIRW47491.2019.8989910},
year = {2019},
date = {2019-10-13},
booktitle = {2019 IEEE International Integrated Reliability Workshop (IIRW)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 7. | Waltl M. Characterization and Modeling of Single Charge Trapping in MOS Transistors Conference 2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019. Links | BibTeX @conference{M.2019,
title = {Characterization and Modeling of Single Charge Trapping in MOS Transistors},
author = {Waltl M.},
doi = {10.1109/IIRW47491.2019.8989880},
year = {2019},
date = {2019-07-13},
booktitle = {2019 IEEE International Integrated Reliability Workshop (IIRW)},
publisher = {IEEE},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
|
| 6. | D. Waldhoer, A.-M. El-Sayed, M. Waltl, T. Grasser Ab-Initio Study on Defect-Strain Interaction in Amorphous Silica Workshop ESCOMP Summer School, 2019. BibTeX @workshop{Waldhoer2019,
title = {Ab-Initio Study on Defect-Strain Interaction in Amorphous Silica},
author = {D. Waldhoer, A.-M. El-Sayed, M. Waltl, T. Grasser},
year = {2019},
date = {2019-07-08},
booktitle = {ESCOMP Summer School},
keywords = {},
pubstate = {published},
tppubtype = {workshop}
}
|
| 5. | A. Grill,
B. Stampfer,
Ki-Sik Im,
J.-H.Lee,
C.Ostermaier,
H.Ceric,
M.Waltl,
T.Grasser Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs Journal Article Solid-State Electronics, 156 , pp. 41-47, 2019. Links | BibTeX @article{GRILL2019,
title = {Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs},
author = {A. Grill,
B. Stampfer,
Ki-Sik Im,
J.-H.Lee,
C.Ostermaier,
H.Ceric,
M.Waltl,
T.Grasser},
doi = {10.1016/j.sse.2019.02.004},
year = {2019},
date = {2019-07-01},
journal = {Solid-State Electronics},
volume = {156},
pages = {41-47},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 4. | Bianka Ullmann,
Katja Puschkarsky,
Michael Waltl,
Hans Reisinger
and Tibor Grasser Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques Journal Article IEEE Transactions of Device and Materials Reliability, 19 (2), pp. 358-362, 2019. Links | BibTeX @article{ULLMANN2019,
title = {Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques},
author = {Bianka Ullmann,
Katja Puschkarsky,
Michael Waltl,
Hans Reisinger
and Tibor Grasser},
doi = {10.1109/TDMR.2019.2909993},
year = {2019},
date = {2019-06-07},
journal = {IEEE Transactions of Device and Materials Reliability},
volume = {19},
number = {2},
pages = {358-362},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
| 3. | Matthias Kratzmann Temperaturkontroller für die Defektspektroskopie in Halbleitertransistoren Miscellaneous Bachelor's Thesis, TU Wien, 2019, Supervised by M. Waltl and T. Grasser. BibTeX @misc{Kratzmann2019,
title = {Temperaturkontroller für die Defektspektroskopie in Halbleitertransistoren},
author = {Matthias Kratzmann},
editor = {Tibor Grasser and Michael Waltl},
year = {2019},
date = {2019-03-23},
howpublished = {Bachelor's Thesis, TU Wien},
note = {Supervised by M. Waltl and T. Grasser},
keywords = {},
pubstate = {published},
tppubtype = {misc}
}
|
| 2. | Christian Schleich Characterization and Modelling of SiC Transistors Masters Thesis 2019, Supervised by M. Waltl and T. Grasser. BibTeX @mastersthesis{Schleich2019,
title = {Characterization and Modelling of SiC Transistors},
author = {Christian Schleich},
year = {2019},
date = {2019-01-25},
howpublished = {Master's Thesis, TU Wien},
note = {Supervised by M. Waltl and T. Grasser},
keywords = {},
pubstate = {published},
tppubtype = {mastersthesis}
}
|
| 1. | Martin Baumann Stromnachführungsmodul für Defektspektroskopie in Halbleitertransistoren Miscellaneous Bachelor's Thesis, TU Wien, 2019, Supervised by M. Waltl and T. Grasser. BibTeX @misc{Baumann2019,
title = {Stromnachführungsmodul für Defektspektroskopie in Halbleitertransistoren},
author = {Martin Baumann},
editor = {Tibor Grasser and Michael Waltl},
year = {2019},
date = {2019-01-11},
howpublished = {Bachelor's Thesis, TU Wien},
note = {Supervised by M. Waltl and T. Grasser},
keywords = {},
pubstate = {published},
tppubtype = {misc}
}
|
