Balázs Bámer was born in 1976, and received his MSc in 2001 at the Technical University of Budapest, where he studied computer science. After several years in industrial software development and various jobs in academia, he joined Institute for Microelectronics in January 2023 as a doctoral candidate in the Christian Doppler Laboratory for Multi-Scale Process Modeling of Semiconductors Devices and Sensors. His research focus is on studying dopant implantation and activation. In particular, he is working on a model for dopant activation in SiC, based on ion implantation conditions, such as temperature.