Yury Illarionov was born in Leningrad (now Saint-Petersburg) in 1988. He studied solid state physics at the Physical Science and Technology Faculty of St. Petersburg State Polytechnical University where he received the B.Sc. and M.Sc. degrees in 2009 and 2011, respectively. From 2010 to 2012 he studied advanced material science in Grenoble Institute of Technology (France) and University of Augsburg (Germany) in frameworks of Functionalized Advanced Materials and Engineering (FAME) Erasmus Mundus program and in September 2012 received a double European M.Sc. degree. His scientific carrier has started in October 2007 in Ioffe Physical-Technical Institute (Russia) and in November 2011 he joined the PhD program there. He also visited IRCELYON (France, May-July 2011) and Singapore Institute of Manufacturing Technology (Singapore, February-July 2012) as a young guest researcher. He joined the Institute for Microelectronics in February 2013. In January 2015 he received the PhD degree in semiconductor physics from Ioffe Physical-Technical Institute and in December 2015 the Dr.techn. degree from TU Wien. Since January 2016 Dr. Yury Illarionov is a postdoc researcher working on reliability of the next-generation 2D FETs with graphene, MoS2 and phosphorene.