Ananya Karmakar received her B.Sc and M.Sc in Electronic Science from University of Calcutta, India in 2018 and 2020 respectively. During several research internships she focused on physics based modelling of field effect transistor enabled by 2D materials for sensing and secured hardware application using nitride charge trapping. In addition, she worked on TCAD modeling of contacts between metals and 2D materials. In April 2023 she joined the Institute for Microelectronics to pursue her PhD, focusing on insulators for 2D material based transistors.